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    STMicroelectronics STP4NK60ZFP

    MOSFET N-CH 600V 4A TO220FP
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    DigiKey STP4NK60ZFP Tube 6,534 1
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    Mouser Electronics STP4NK60ZFP 1,649
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    Newark STP4NK60ZFP Bulk 1
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    STMicroelectronics STP4NK60ZFP 1,649 1
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    Bristol Electronics STP4NK60ZFP 400
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    TME STP4NK60ZFP 66 1
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    Avnet Silica STP4NK60ZFP 21,150 14 Weeks 50
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    New Advantage Corporation STP4NK60ZFP 1,988 1
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    Win Source Electronics STP4NK60ZFP 233,760
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    STMicroelectronics STP4N150

    MOSFET N-CH 1500V 4A TO220AB
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    DigiKey STP4N150 Tube 4,293 1
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    Avnet Americas STP4N150 Tube 11,000 13 Weeks 1,000
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    STP4N150 Bulk 32 Weeks, 4 Days 1
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    Mouser Electronics STP4N150 854
    • 1 $5.19
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    Newark STP4N150 Bulk 2,906 1
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    STMicroelectronics STP4N150 804 1
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    TME STP4N150 280 1
    • 1 $9.33
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    Avnet Silica STP4N150 15,250 14 Weeks 50
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    EBV Elektronik STP4N150 2,750 14 Weeks 50
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    STMicroelectronics STP4N52K3

    MOSFET N-CH 525V 2.5A TO220
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    DigiKey STP4N52K3 Tube 2,202 1
    • 1 $1
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    Avnet Americas STP4N52K3 Tube 13 Weeks 2,000
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    Mouser Electronics STP4N52K3 2,000
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    STMicroelectronics STP4N52K3 1,395 1
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    Bristol Electronics STP4N52K3 281
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    ComSIT USA STP4N52K3 2,500
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    STMicroelectronics STP4NK80ZFP

    MOSFET N-CH 800V 3A TO220FP
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    DigiKey STP4NK80ZFP Tube 1,811 1
    • 1 $1.57
    • 10 $1.57
    • 100 $1.0387
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    Avnet Americas STP4NK80ZFP Tube 2,000 14 Weeks 50
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    Mouser Electronics STP4NK80ZFP 791
    • 1 $1.57
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    STMicroelectronics STP4NK80ZFP 791 1
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    TME STP4NK80ZFP 76 1
    • 1 $1.08
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    ComSIT USA STP4NK80ZFP 150
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    Avnet Silica STP4NK80ZFP 4,200 15 Weeks 50
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    Win Source Electronics STP4NK80ZFP 280,000
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    • 1000 $0.49
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    STMicroelectronics STP4NK80Z

    MOSFET N-CH 800V 3A TO220AB
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    DigiKey STP4NK80Z Tube 978 1
    • 1 $1.94
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    Avnet Americas STP4NK80Z Tube 13 Weeks 1,000
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    Mouser Electronics STP4NK80Z 91
    • 1 $1.94
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    • 1000 $0.919
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    Newark STP4NK80Z Bulk 50
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    STMicroelectronics STP4NK80Z 87 1
    • 1 $1.9
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    Bristol Electronics STP4NK80Z 1,950
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    STP4NK80Z 100 3
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    TME STP4NK80Z 93 1
    • 1 $1.036
    • 10 $0.747
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    Avnet Silica STP4NK80Z 500 14 Weeks 50
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    TP4N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSK4900

    Abstract: IGBT desaturation protection -55C to 125C
    Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 600V ISOLATED HALF BRIDGE GATE DRIVER 4900 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Floating Channels up to 600V Up to 8 Amp Peak Source and Sink Current De-Saturation Protection/Shutdown Individual ON, OFF and Soft Shutdown Pins for Each IGBT Gate


    Original
    PDF MIL-PRF-38534 MSK4900 IGBT desaturation protection -55C to 125C

    TER22

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R7 AHA 1/12/04 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


    Original
    PDF SS-222 TER22

    tdr22

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R5 AHA 6/30/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


    Original
    PDF SS-222 tdr22

    TDR15

    Abstract: TD18N TD68N TP82N TP68N
    Text: MHL multilayer ceramic inductor features inductors • Monolithic structure provides high reliability in a wide temperature and humidity range • High quality ceramic material and unique manufacturing process provides high Q at high frequency • Standard EIA packages: 1E, 1J, 2A


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating


    Original
    PDF MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-203 R4 AHA 02/05/04 Thin Film Chip Inductors Type KL73 0402 CERTIFIED 1. Scope This specification applies to Thin Film Chip Inductors KL73 1E size produced by KOA Corporation. 2. Type Designation The type designation shall be the following form:


    Original
    PDF SS-203

    KL731H

    Abstract: TP33N KL731E
    Text: KL73 thin film inductor features Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating


    Original
    PDF MIL-STD-202, KL731H TP33N KL731E

    Untitled

    Abstract: No abstract text available
    Text: KOA SPEER ELECTRONICS, INC. SS-222 R9 AHA 2/09/05 Multilayer Ceramic Inductors Type MHL CERTIFIED CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency


    Original
    PDF SS-222 Dimensions039

    4N50

    Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
    Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB


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    PDF 34tclt 0e7117 IRF430-433/IRF830-833 MTM/MTP4N45/4N50 t-39-11 O-22QAB IRF430 IRF431 IRF432 IRF433 4N50 IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431

    STP4NB80

    Abstract: No abstract text available
    Text: TP4NB80 TP4NB80FP N - CHANNEL 800V - 3 iî - 4A - TO -220/T0220FP PowerMESH MOSFET TYPE V S TP4N B80 STP 4N B80FP • . . . . dss 800 V 800 V R D S o n Id 3.3 Q. 3.3 n 4 A 4 A TYPICAL RDS(on) = 3 £1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


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    PDF STP4NB80 STP4NB80FP -220/T0220FP B80FP STP4NB80/FP O-22QFP STP4NB80

    SWITCHING WELDING SCHEMATIC BY MOSFET

    Abstract: Q575
    Text: SGS-THOMSON !LiM iO gS TP4NB50 TP4NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE TP4NB 50 S TP4N B 50FP . m . . . V dss RDS(on Id 5 00 V 500 V < 2.8 a < 2.8 a 3.8 A 2.5 A TYPICAL RDs(on) = 2.5 Q, 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


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    PDF STP4NB50 STP4NB50FP SWITCHING WELDING SCHEMATIC BY MOSFET Q575

    irf4321

    Abstract: 4N50 MTM4N50 IRF830 MTP4N50 irf4304 IRF432 IRF430 IRF431 IRF433
    Text: A4 FAIRCHILD SEMICONDUCTOR IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD mamm am mam i DE J 341T a7 M O D E T i n 1 h A Schlumberger Company Power And Discrete Division Description T-39-11 TO-204AA TO-22QAB


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    PDF IRF430-433/IRF830-833 MTM/MTP4N45/4N50 T-39-11 O-204AA O-22QAB IRF430 IRF431 IRF432 IRF433 MTM4N45 irf4321 4N50 MTM4N50 IRF830 MTP4N50 irf4304 IRF432 IRF430 IRF431 IRF433

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP4N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP4N40E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


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    PDF MTP4N40E/D TP4N40E 21A-06 O-220AB)

    Untitled

    Abstract: No abstract text available
    Text: ¿ 5 4 40 4 40 SGS-THOMSON ¡UÈTO « 7 STP NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TP4N A 40 TP4N A 40FI V dss RDS on Id 400 V 400 V <20 <20 4 A 2.8 A . TYPICAL R Ds(on) = 1.7 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING


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    PDF ISQWATT220

    Untitled

    Abstract: No abstract text available
    Text: TP4NC60 TP4NC60FP N-CHANNEL 600V-1.8 iì -4.2 A TO-220/TO-220FP _ PowerMESH II MOSFET PRELIMINARY DATA TYPE S TP4N C 60 TP4NC 60FP • . . . . V dss RDS on Id 600 V 600 V < 2 .2 Q. < 2 .2 Q. 4.2 A 4.2 A TYPICAL RDS(on) = 1.8 EXTREMELY HIGH dv/dt CAPABILITY


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    PDF STP4NC60 STP4NC60FP 00V-1 O-220/TO-220FP

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA O rder this docum ent by M TP4N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP4N80E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


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    PDF TP4N80E/D TP4N80E 21A-06

    IRF510

    Abstract: Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF510-513 IRF511 IRF512
    Text: 3469674 FAIRCHILD SEMICONDUCTOR f l 14 D e I 3 4 ^ 7 4 DGETTBM fl I IRF510-513 TP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-220AB These devices are n-channel, enhancement mode, power


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    PDF IRF510-513 MTP4N08/4N10 O-220AB IRF510 IRF511 IRF512 IRF513 MTP4N08 MTP4N10 IRF510-513 IRF510 Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF511 IRF512

    75 LS 541

    Abstract: HD6413002F Srfm hitachi ast1 a19t
    Text: Hitachi Microcomputer H8/3002 HD6413002 Hardware Manual HITACHI Notice When using this document, keep the following in mind: 1. This document may. wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the


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    PDF H8/3002 HD6413002 FP-100B) TFP-100B) FP-100A) 75 LS 541 HD6413002F Srfm hitachi ast1 a19t

    STP4NB100

    Abstract: No abstract text available
    Text: TP4NB100 TP4NB100FP N - CHANNEL 1000V - 40 . - 3.8A - TO-220/TO-220FP PowerMESH MOSFET TYPE V dss R D S o n S T P 4 N B 1 00 S T P 4 N B 1 00FP 1000 V 1000 V < 4 .4 Cl < 4 .4 Cl • . . . . Id 3 .8 3 .8 A A TYPICAL RDS(on) = 4 £2 EXTREMELY HIGH dv/dt CAPABILITY


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    PDF STP4NB100 STP4NB100FP O-220/TO-220FP STP4NB100/STP4NB100FP O-22QFP STP4NB100

    Untitled

    Abstract: No abstract text available
    Text: VM65014 VTC Inc. Value the Customer ANALOG PRML CHANNEL DETECTOR 960801 PRELIMINARY FEATURES CONNECTION DIAGRAM • Register programmable user data rates from 46 to 140 Mbps • Sampled data read channel with maximum likelihood Viterbi detection • Programmable continuous-time filter with two


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    PDF VM65014

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    55425

    Abstract: Maximum Likelihood block diagram
    Text: VM ÌS IS J!? ,;- 950801 FEA TU RES • Register Programmable User Data Rates From 46 to 140 Mbps • Sampled Data Read Channel With Viterbi Qualification • Programmable Continuous-Time Filter With Two Independently Variable Real Zeros and Up to 13 dB Boost


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    PDF VM65050 VM65050 55425 Maximum Likelihood block diagram

    TSD45N50V

    Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
    Text: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00


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    PDF O-220 TSD45N50V TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V