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    TP2640N3 Search Results

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    Microchip Technology Inc TP2640N3-G

    MOSFET P-CH 400V 180MA TO92-3
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    DigiKey TP2640N3-G Bag 1,000
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    Avnet Americas TP2640N3-G Bag 1,000
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    Mouser Electronics TP2640N3-G 1,001
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    Microchip Technology Inc TP2640N3-G
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    Onlinecomponents.com TP2640N3-G
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    TME TP2640N3-G 1
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    NAC TP2640N3-G Bag 1,000
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    Master Electronics TP2640N3-G
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    Supertex Inc TP2640N3

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    Bristol Electronics TP2640N3 152 3
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    Quest Components TP2640N3 121
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    TP2640N3 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TP2640N3 Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TP2640N3 Supertex P-Channel Enhancement Mode Vertical DMOS FETs Scan PDF
    TP2640N3-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 400V 0.18A TO92-3 Original PDF

    TP2640N3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TP2640N3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)200m @Temp (øC)150# IDM Max (@25øC Amb)800m @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55


    Original     		PDF TP2640N3 Junc-Case125

    TN0604N3

    Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
    Text: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -


    Original     		PDF 2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332 AP0332 VN2110K1 BSS123 DN2535 TN0604N3 HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex

    TO243AA

    Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
    Text: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G


    Original     		PDF 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G TO243AA TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB

    P2640

    Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
    Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2640 DSFP-TP2640 A062609 P2640 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel

    IN4625

    Abstract: P-Channel mosfet 400v MOSFET 400V 400v p-channel mosfet N-Channel Depletion-Mode MOSFET P-Channel Depletion-Mode N-Channel Depletion-Mode MOSFET high voltage n-Channel mosfet 400v n channel depletion MOSFET depletion 400V power mosfet
    Text: AN-D27 Application Note AN-D27 DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are


    Original     		PDF AN-D27 TP2640N3 TN2540N8 125pF LND150N3 IN4625 IN4625 P-Channel mosfet 400v MOSFET 400V 400v p-channel mosfet N-Channel Depletion-Mode MOSFET P-Channel Depletion-Mode N-Channel Depletion-Mode MOSFET high voltage n-Channel mosfet 400v n channel depletion MOSFET depletion 400V power mosfet

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TP2640 General Description Low threshold -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown


    Original     		PDF TP2640 DSFP-TP2640 B081613

    DN2540N5

    Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
    Text: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5


    Original     		PDF 2N7000 2N7002 2N7008 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5 DN2540N5 HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3

    Untitled

    Abstract: No abstract text available
    Text: TP2635/TP2640 P- Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2635/TP2640 DSFP-TP2635 TP2640 C032807

    Untitled

    Abstract: No abstract text available
    Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2640 DSFP-TP2640 A091608

    depletion 400V power mosfet

    Abstract: P-Channel mosfet 400v MOSFET 400V depletion mode mosfet N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET depletion mode power mosfet n channel depletion MOSFET P-Channel Depletion Mosfet datasheet
    Text: AN-D27 Application Note DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are the basis for their design-ins. High breakdown


    Original     		PDF AN-D27 depletion 400V power mosfet P-Channel mosfet 400v MOSFET 400V depletion mode mosfet N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET depletion mode power mosfet n channel depletion MOSFET P-Channel Depletion Mosfet datasheet

    TP2635

    Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
    Text: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A


    Original     		PDF TP2635 TP2640 -350V TP2635N3 -400V TP2640LG TP2640N3 TP2640ND 678pF 263pF TP2635 TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND

    MOSFET 400V

    Abstract: P-Channel Depletion-Mode 400v p-channel mosfet depletion 400V power mosfet Depletion MOSFET depletion power MOSFET 400V P-Channel mosfet 400v P-channel mosfet 500V mosfet transistors low voltage
    Text: Application Note AN-D27 DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are the


    Original     		PDF AN-D27 TN2540N8 125pF LND150N3 IN4625 MOSFET 400V P-Channel Depletion-Mode 400v p-channel mosfet depletion 400V power mosfet Depletion MOSFET depletion power MOSFET 400V P-Channel mosfet 400v P-channel mosfet 500V mosfet transistors low voltage

    7A, 100v fast recovery diode

    Abstract: TP2635 TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND
    Text: TP2635/TP2640 TP2635 TP2640 Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 DICE† -350V 15Ω -2.0V -0.7A – TP2635N3


    Original     		PDF TP2635/TP2640 TP2635 TP2640 -350V TP2635N3 TP2635ND -400V TP2640LG TP2640N3 TP2640ND 7A, 100v fast recovery diode TP2635 TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND

    Untitled

    Abstract: No abstract text available
    Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2640 DSFP-TP2640 A042709

    a1026

    Abstract: TP2640N3-G
    Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2640 MS-012, TP2640 DSFP-TP2640 A102607 a1026 TP2640N3-G

    IN4625

    Abstract: TN2540N8 TP2640N3 P-Channel Depletion-Mode N-Channel Depletion-Mode MOSFET high voltage MOSFET 400V LND150N3
    Text: Application Note AN-D27 DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are the


    Original     		PDF AN-D27 TN2540N8 125pF LND150N3 IN4625 IN4625 TN2540N8 TP2640N3 P-Channel Depletion-Mode N-Channel Depletion-Mode MOSFET high voltage MOSFET 400V LND150N3

    TP2635

    Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
    Text: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A


    Original     		PDF TP2635 TP2640 -350V TP2635N3 -400V TP2640LG TP2640N3 TP2640ND 678pF 263pF TP2635 TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND

    Untitled

    Abstract: No abstract text available
    Text: Prelim inary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) I d (ON) BVdgs (max) (max) (min) SO-8 TO-92 DICE+ -350V 15Q -2.0 V -0.7A - TP2635N3 TP2635ND -400V 15Q -2.0 V -0.7A TP2640LG TP2640N3


    OCR Scan     		PDF TP2640LG -350V -400V TP2635N3 TP2640N3 TP2635ND TP2640ND -300mA, -200mA

    VP1304N2

    Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
    Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND


    OCR Scan     		PDF 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 VP1304N2 TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2

    Untitled

    Abstract: No abstract text available
    Text: TP2635 TP2640 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON ^ G S (th ) ' d (ON) B V dgs (max) (max) (min) SO-8 TO-92 Diet -350V i5 n -2.0V -0.7A - TP2635N3 TP2635ND


    OCR Scan     		PDF TP2635 TP2640 TP2640LG TP2635N3 TP2640N3 TP2635ND TP2640ND -350V -400V TP2635/TP2640

    A773* Transistor

    Abstract: TP2635 TP2635LG TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND A773
    Text: TP2635 TP2640 Supertex inc. Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON b v dgs (max) (max) (min) SO-8 TO-92 DICEt -350V 15£2 -2.0V 0.7A TP2635LG TP2635N3 TP2635ND -400V


    OCR Scan     		PDF TP2635 TP2640 -350V TP2635LG TP2635N3 TP2635ND -400V TP2640LG TP2640N3 TP2640ND A773* Transistor TP2635ND TP2640 TP2640ND A773

    Untitled

    Abstract: No abstract text available
    Text: TP2635 TP2640 S u p e rte x inc. Low Thresh old Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R ds on BVdgs (max) (max) -350V 15Q -2.0V -400V 15Q -2.0V Order Number / Package !f b v dss / SO-8 TO-92 DICE* 0.7A TP2635LG TP2635N3


    OCR Scan     		PDF TP2635 TP2640 TP2635LG TP2640LG -350V -400V TP2635N3 TP2640N3 TP2635ND TP2640ND

    Untitled

    Abstract: No abstract text available
    Text: TP2635 TP2640 I_0W Threshold S iM fM C rtG X in c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BVDSS / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) SO-8 TO-92 Diet -350V 15& -2.0V -0.7A - TP2635N3 — -400V


    OCR Scan     		PDF TP2635 TP2640 -350V TP2635N3 -400V TP2640LG TP2640N3 TP2640ND TP2635/TP2640