TP5A
Abstract: TP2510 TP2510N8 TP2510ND
Text: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
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TP2510
O-243AA*
-100V
TP2510N8
TP2510ND
OT-89.
O-243AA
125pF
TP5A
TP2510
TP2510N8
TP2510ND
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TP5A
Abstract: TP2510 TP2510N8 TP2510ND
Text: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
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TP2510
O-243AA*
-100V
TP2510N8
TP2510ND
OT-89.
O-243AA
125pF
TP5A
TP2510
TP2510N8
TP2510ND
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TO-243AA
Abstract: TP2510 TP2510N8 TP2510N8-G TP2510ND tp5a
Text: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) -100V 3.5Ω -2.4V -1.5A Order Number / Package Die† TO-243AA* TP2510N8 TP2510ND TP2510N8-G * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
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TP2510
-100V
O-243AA*
TP2510N8
TP2510ND
TP2510N8-G
OT-89.
O-243AA
125pF
TO-243AA
TP2510
TP2510N8
TP2510N8-G
TP2510ND
tp5a
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TA 7136 p
Abstract: TP2510 TP2510N8 TP2510ND
Text: TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
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TP2510
O-243AA*
-100V
TP2510N8
TP2510ND
OT-89.
TA 7136 p
TP2510
TP2510N8
TP2510ND
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b0914
Abstract: No abstract text available
Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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TP2510
125pF
DSFP-TP2510
B091408
b0914
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A110507
Abstract: tp5aw
Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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TP2510
125pF
TP2510
O-243AA
OT-89)
O-243,
DSFP-TP2510
A110507
A110507
tp5aw
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tp5aw
Abstract: TP2510 TP2510N8-G TP2510ND
Text: TP2510 Low Threshold P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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PDF
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TP2510
125pF
O-243,
A082307
tp5aw
TP2510
TP2510N8-G
TP2510ND
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tp5aw
Abstract: TP5A Most TP2510 TP2510N8-G TP2510ND
Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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Original
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TP2510
125pF
DSFP-TP2510
B022309
tp5aw
TP5A
Most
TP2510
TP2510N8-G
TP2510ND
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TP2506
Abstract: TP2510ND TO-243AA TP2510 TP2510N8 P024 TP2506ND
Text: TP2506/TP2510 TP2506 TP2510 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Dice† -60V 3.5Ω -2.4V -1.5A — TP2506ND -100V 3.5Ω -2.4V
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TP2506/TP2510
TP2506
TP2510
O-243AA*
TP2506ND
-100V
TP2510N8
TP2510ND
OT-89.
TP2506
TP2510ND
TO-243AA
TP2510
TP2510N8
P024
TP2506ND
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tp5aw
Abstract: No abstract text available
Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination
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Original
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PDF
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TP2510
125pF
TP2510
O-243AA
OT-89)
O-243,
DSFP-TP2510
B122707
tp5aw
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Untitled
Abstract: No abstract text available
Text: TP2510 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage
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TP2510
125pF
DSFP-TP2510
B022309
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SW7 357
Abstract: HV803 ausi die attach CSI 2702 HV208 HV82 38495 VF01 VP03 AF03
Text: Chapter 19 – Die Specifications DMOS Die Specifications Selector Guide VF01/VF06/VF21/VF25 VF22/LND1/LP07 VF05/VF13/VF26/TN07 VF32/LNE1/LP08 AF03 LR6 LR7 HT04 HV15/HV16/HV18 HV202 HV204/HV217/HV218/HV227/HV228 HV207 HV208 HV209 HV21/HV22 HV31/49 HV34 HV45/HV46
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VF01/VF06/VF21/VF25
VF22/LND1/LP07
VF05/VF13/VF26/TN07
VF32/LNE1/LP08
HV15/HV16/HV18
HV202
HV204/HV217/HV218/HV227/HV228
HV207
HV208
HV209
SW7 357
HV803
ausi die attach
CSI 2702
HV208
HV82
38495
VF01
VP03
AF03
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Untitled
Abstract: No abstract text available
Text: TP2510 Superte x inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON VQS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet -100V 3.5£2 -2.4V -1.5A TP2510N8 TP2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
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TP2510
O-243AA*
TP2510N8
TP2510ND
-100V
OT-89.
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VP1304N2
Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND
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2N7002
BSS123
DN2535N2
DN2535N3
DN2535N5
DN2535ND
DN2540N2
DN2540N3
DN2540N5
DN2540N8
VP1304N2
TP2540ND
VN1304N3
VP3203N3
LND150N8
VN3205N5
VN1310N3
TN2510N8
TN0102N2
VP1306N2
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Untitled
Abstract: No abstract text available
Text: TP2506 Supertex inc. t p 2si o Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^D S O N b v dos -60V -100 V Order Number / Package (max) Vos<th) (max) (min) TO-243AA* Dice* 3.5£2 -2.4V -1.5A — TP2506ND 3.512
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PDF
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TP2506
O-243AA*
TP2510N8
TP2506ND
TP2510ND
/TP25'
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Untitled
Abstract: No abstract text available
Text: . Ljà Supertex inc Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ Order Number / Package BV dgs ^DSfON max) ^GSflh) (max) ' d(ON) (min) TO-243AA* DICE* -60V 3.5£i -2.4V -1.5A — TP2506ND -100V 3.5Q -2.4V -1.5A
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-100V
O-243AA*
TP2506ND
TP2510ND
TP2S10N8
OT-89.
TP25A
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p023 diode
Abstract: No abstract text available
Text: ^ ^ Si i I r ^ zj r* r TP2506 TP2510 Low Thrash o B 1[ i r * , •mimimu . .immilli _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-243AA*
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TP2506
TP2510
O-243AA*
TP2510N8
TP2506ND
TP2510ND
-100V
TP2506/TP2510
p023 diode
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Untitled
Abstract: No abstract text available
Text: LJ S u p e rte x TP25A m e . L o w T h r e s h o ld P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ' r Order Number / Package B V Ds s ! ^DS O N) V GS(th) I d (ON) b v dgs (max) (max) (min) TO-243AA* DICEt -60V 3.5£i -2.4V -1.5A — TP2506ND
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TP25A
O-243AA*
TP2510N8
TP2506ND
TP2510ND
-100V
OT-89.
-250mA
300ms
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