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    TP252 Search Results

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    TP252 Price and Stock

    Microchip Technology Inc TP2520N8-G

    MOSFETs 200V 12Ohm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TP2520N8-G 5,487
    • 1 $1.7
    • 10 $1.7
    • 100 $1.29
    • 1000 $1.21
    • 10000 $1.2
    Buy Now

    Microchip Technology Inc TP2522N8-G

    MOSFETs 220V 12Ohm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TP2522N8-G
    • 1 $1.85
    • 10 $1.85
    • 100 $1.55
    • 1000 $1.39
    • 10000 $1.39
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    KOA Speer Electronics Inc RN73H1ETTP2520F50

    Thin Film Resistors - SMD 252Ohm,0402,1%,50ppm ,63mW,50V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RN73H1ETTP2520F50
    • 1 $0.25
    • 10 $0.187
    • 100 $0.131
    • 1000 $0.085
    • 10000 $0.063
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    KOA Speer Electronics Inc RN73R1ETTP2522F50

    Thin Film Resistors - SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RN73R1ETTP2522F50
    • 1 $0.22
    • 10 $0.156
    • 100 $0.11
    • 1000 $0.067
    • 10000 $0.05
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    KOA Speer Electronics Inc RN73R1ETTP2522D50

    Thin Film Resistors - SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics RN73R1ETTP2522D50
    • 1 $0.22
    • 10 $0.156
    • 100 $0.11
    • 1000 $0.067
    • 10000 $0.05
    Get Quote

    TP252 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TP252 Unknown Cross Reference Datasheet Scan PDF
    TP252 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    TP252 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    TP2520 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TP2520 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TP2520N8 Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TP2520N8-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 200V 0.26A SOT89-3 Original PDF
    TP2522 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TP2522 Supertex P-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TP2522N8 Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TP2522N8-G Supertex P-Channel Enhancement Mode Vertical DMOS FETs Original PDF
    TP2522ND Supertex P-Channel Enhancement-Mode Vertical DMOS FET Original PDF
    TP252A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    TP252A Sprague Semiconductor Data Book 1977 Scan PDF
    TP252B Unknown Basic Transistor and Cross Reference Specification Scan PDF
    TP252B Sprague Semiconductor Data Book 1977 Scan PDF
    TP252CA Unknown Basic Transistor and Cross Reference Specification Scan PDF
    TP252CA Sprague Semiconductor Data Book 1977 Scan PDF

    TP252 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TP2522

    Abstract: No abstract text available
    Text: TP2522 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2522 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    PDF TP2522 TP2522 A020309

    Untitled

    Abstract: No abstract text available
    Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    PDF TP2522 125pF DSFP-TP2522 B091408

    Untitled

    Abstract: No abstract text available
    Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    PDF TP2522 125pF 200pF TP2522 O-243AA OT-89) O-243, DSFP-TP2522 B122707

    TA 7139

    Abstract: TA 7139 P
    Text: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8-220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89.


    Original
    PDF TP2520 TP2522 -200V -220V OT-89. O-243AA* TP2520N8 TP2522N8 TP2522ND 200pF TA 7139 TA 7139 P

    TP2522ND

    Abstract: TP2522 TP2522N8-G
    Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    PDF TP2522 125pF DSFP-TP2522 B022309 TP2522ND TP2522 TP2522N8-G

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TP2522 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown


    Original
    PDF TP2522 125pF DSFP-TP2522 C081413

    TP2520

    Abstract: No abstract text available
    Text: TP2520 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2520 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    PDF TP2520 TP2520 A020309

    TP2520

    Abstract: No abstract text available
    Text: Supertex inc. TP2520 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2520 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    PDF TP2520 TP2520 A031610

    A10150

    Abstract: TO243AA TP2522 TP2522N8-G TP2522ND A101507
    Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    PDF TP2522 125pF O-243AA OT-89) O-243, A101507 A10150 TO243AA TP2522 TP2522N8-G TP2522ND A101507

    TP2520

    Abstract: TP2520N8 TP2522 TP2522N8 TP2522ND voltage drop circuit from 220V to 10V marking TP5C
    Text: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8-220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89.


    Original
    PDF TP2520 TP2522 O-243AA* -200V TP2520N8 -220V TP2522N8 TP2522ND OT-89. O-243AA TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND voltage drop circuit from 220V to 10V marking TP5C

    TP2520N8-G

    Abstract: No abstract text available
    Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    PDF TP2520 125pF 200pF TP2520 O-243AA OT-89) O-243, B122707 TP2520N8-G

    Untitled

    Abstract: No abstract text available
    Text: TP2522 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


    Original
    PDF TP2522 125pF DSFP-TP2522 B022309

    marking TP5C

    Abstract: TP5C TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND
    Text: TP2520 TP2522 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† -200V 12Ω -2.4V -0.75A TP2520N8-220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND * Same as SOT-89.


    Original
    PDF TP2520 TP2522 O-243AA* -200V TP2520N8 -220V TP2522N8 TP2522ND OT-89. O-243AA marking TP5C TP5C TP2520 TP2520N8 TP2522 TP2522N8 TP2522ND

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TP2520 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Low threshold -2.4V max. ►► High input impedance ►► Low input capacitance (125pF max.) ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown


    Original
    PDF TP2520 125pF C081413

    Untitled

    Abstract: No abstract text available
    Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


    Original
    PDF TP2520 125pF B022309

    TP2522

    Abstract: No abstract text available
    Text: Supertex inc. TP2522 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2522 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original
    PDF TP2522 TP2522 A031610

    Untitled

    Abstract: No abstract text available
    Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    PDF TP2520 125pF 200pF TP2520 O-243AA OT-89) O-243, B122707

    TP2520

    Abstract: tp5cw TP5C
    Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    PDF TP2520 125pF B022309 TP2520 tp5cw TP5C

    b0914

    Abstract: No abstract text available
    Text: TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original
    PDF TP2520 125pF B091408 b0914

    Untitled

    Abstract: No abstract text available
    Text: ^ TP2516 TP2520 S j I I r . zj r r jij 'f 1 r I r*, •mimimu . .immilli _ Low T h rash o M P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min)


    OCR Scan
    PDF TP2516 TP2520 O-243AA* TP2520N8 TP2516ND TP2520ND -160V -200V TP2516/TP2520

    Untitled

    Abstract: No abstract text available
    Text: 12E •V D I b3b?aS4 G0ÔÛ2M3 I \ s i f* MOTOROLA MOTOROLA SC XSTRS/R T -3 S F ■ SEMICONDUCTOR TECHNICAL DATA Advance Information TP2520 The RF Line U H F P o w e r T ra n sisto r 20 W — 470 M H z U H F PO W ER T R A N S IS T O R The TP2520 is designed for 12.5 V common-emitter amplifier applications in mobile


    OCR Scan
    PDF TP2520 TP2520

    Untitled

    Abstract: No abstract text available
    Text: TP2520 TP2522 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Informât on BV dss / R d S ON ^GS(th) I d (ON) Order Num ber / Package b v dgs (max) (max) (min) TO-243AA* Diet -200V 12Í2 -2.4V -0.75A TP2520N8-220V 12Í2


    OCR Scan
    PDF TP2520 TP2522 O-243AA* -200V TP2520N8 -220V TP2522N8 TP2522ND 125pF TP2520/TP2522

    TA 7139 P

    Abstract: No abstract text available
    Text: TP2520 TP2522 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ BVdgs Order Number / Package f*DS ON ^G S (th ) ' d (ON) (max) (max) (min) TO-243AA* Die+ -200V 12Q -2.4V -0.75A TP2520N8 TP2520ND -220V 12Q


    OCR Scan
    PDF TP2520 TP2522 -200V -220V O-243AA* TP2520N8 TP2522N8 TP2520ND 125pF TP2520/TP2522 TA 7139 P

    Untitled

    Abstract: No abstract text available
    Text: ^ TP o TP2516 Supertex inc. 252 Low Thresh old P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information ^ G S th b v dqs (max) (max) (min) TO-243AA* DICE+ -160V 12£2 -2.4V -0.75A — TP2516ND -200V 12Î2 -2.4V -0.75A TP2520N8 TP2520ND z ^D S (O N )


    OCR Scan
    PDF TP2516 O-243AA* TP2520N8 TP2516ND TP2520ND -160V -200V OT-89. TP2516/TP2520