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    TOSHIBA TRANSISTOR K3473 Search Results

    TOSHIBA TRANSISTOR K3473 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA TRANSISTOR K3473 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k3473

    Abstract: K347 TOSHIBA K3473 2SK3473 SC-65 2SK347 transistor k3473
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		PDF 2SK3473 150lled k3473 K347 TOSHIBA K3473 2SK3473 SC-65 2SK347 transistor k3473

    TOSHIBA K3473

    Abstract: toshiba transistor k3473 transistor k3473 K3473
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		PDF 2SK3473 TOSHIBA K3473 toshiba transistor k3473 transistor k3473 K3473

    TOSHIBA K3473

    Abstract: No abstract text available
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


    Original     		PDF 2SK3473 TOSHIBA K3473

    K3473

    Abstract: TOSHIBA K3473 toshiba transistor k3473 2SK3473 SC-65 transistor k3473
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 K3473 TOSHIBA K3473 toshiba transistor k3473 2SK3473 SC-65 transistor k3473

    Untitled

    Abstract: No abstract text available
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V)


    Original     		PDF 2SK3473

    k3473

    Abstract: TOSHIBA K3473 transistor k3473 2SK3473 SC-65
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 k3473 TOSHIBA K3473 transistor k3473 2SK3473 SC-65

    K3473

    Abstract: TOSHIBA K3473 2SK3473
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 K3473 TOSHIBA K3473 2SK3473

    K3473

    Abstract: TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		PDF 2SK3473 K3473 TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65