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    TOSHIBA STR MODULE Search Results

    TOSHIBA STR MODULE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    MG250YD2YMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 2200 V, 250 A, 2-153A1A Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA STR MODULE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LMG7421PLBC

    Abstract: PG12864LRS-ANN-H PG12864ARS-ANN-G PG12864 pg240128lrs-ata-h hitachi lmg7420plfc-x LMG7421PLBC equivalent LMG7422PLFF MGLS-24064 PG240128
    Text: J572 AIM104 KEYDISP 2192-09005-000-000 AIM104-KEYDISP Introduction The AIM104-KEYDISP is a PC/104 Form Factor module which provides matrix keypad and Liquid Crystal Display interfaces to a PC/104 processor board. Features • • • • • • • • • 8 bit PC/104 interface.


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    PDF AIM104 AIM104-KEYDISP AIM104-KEYDISP PC/104 HD44780 HD61830B T6963C ISO9001 LMG7421PLBC PG12864LRS-ANN-H PG12864ARS-ANN-G PG12864 pg240128lrs-ata-h hitachi lmg7420plfc-x LMG7421PLBC equivalent LMG7422PLFF MGLS-24064 PG240128

    LMG7421PLBC

    Abstract: 4x4 keypad sample code c language pg240128lrs-ata-h 8x8 matrix keypad c LMG7421PLBC equivalent hitachi lmg7420plfc-x PG24064LRS-FTA-H mgls240128t MGLS-24064 LMG7422PLFF
    Text: J572 AIM104 KEYDISP 2192-09972-000-000 AIM104-KEYDISP Introduction The AIM104-KEYDISP is a PC/104 Form Factor module which provides matrix keypad and Liquid Crystal Display interfaces to a PC/104 processor board. Features • • • • • • • • • 8 bit PC/104 interface.


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    PDF AIM104 AIM104-KEYDISP AIM104-KEYDISP PC/104 HD44780 HD61830B T6963C ISO9001 LMG7421PLBC 4x4 keypad sample code c language pg240128lrs-ata-h 8x8 matrix keypad c LMG7421PLBC equivalent hitachi lmg7420plfc-x PG24064LRS-FTA-H mgls240128t MGLS-24064 LMG7422PLFF

    Untitled

    Abstract: No abstract text available
    Text: January '98 Optical Communication Devices Optical Transmitter Module TOLD397S-EA APPLICATION • Optical transmitter for 10Gb/s OC-192 FEATURES package 12.7 (W) x 30(D) x 9(H) mm • Butterfly pigtail • SMF µm DFB-LD integrated with EA modulator • 1.55


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    PDF OLD397S-EA 10Gb/s OC-192)

    STR 6307

    Abstract: str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module
    Text: ● Outline Toshiba has developed a new 2500V-1000A insulated-gate bipolar transistor IGBT product. The product offers longer lifetime and improved reliability, and features a flat compression-bonded encapsulation package, a World first. It is suitable for high-power and high-voltage applications.


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    PDF 500V-1000A J22587 STR 6307 str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module

    MG1200V1us51

    Abstract: No abstract text available
    Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with


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    PDF MG1200V1US51/ MG1800V1US51 MG1200V1us51

    Untitled

    Abstract: No abstract text available
    Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with


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    PDF MG1200V1US51/ MG1800V1US51

    Untitled

    Abstract: No abstract text available
    Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering


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    PDF ST1200FXF21 500-V, 000-A 300-V, 200-A

    str 6307

    Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
    Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering


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    PDF ST1200FXF21 500-V, 000-A 300-V, 200-A str 6307 str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module

    Untitled

    Abstract: No abstract text available
    Text: Users Manual 32bit RISC Microprocessor TX39 family TMPR3904F Rev.2.0 Jan. 12. 1998 1 INTRODUCTION .1 1.1


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    PDF 32bit TMPR3904F TX3904. TMPR3904F

    Toshiba MeP

    Abstract: MEPUM03020-E127 E119 E121 E122 E123 E124 E125 E126 E127
    Text: Addendum to the Simulator User Manual Addendum to the Simulator User Manual The Profiler 14 Apl 2009 Doc-Ver.1.27 MEPUM03020-E127 i Addendum to the Simulator User Manual Revision history 2009/04/14 (ver1.27) Standard (E127) Status Section Contents Changed


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    PDF MEPUM03020-E127 Toshiba MeP MEPUM03020-E127 E119 E121 E122 E123 E124 E125 E126 E127

    toshiba Bluetooth Module

    Abstract: Nokia 6300 nokia* n 93 CVSD fpga
    Text: Bluetooth Developer’s Kit Velocity-compatible Solution for Rapid Development of Bluetooth Hardware and Software Applications Overview Philips Semiconductors is committed to wireless, with worldwide design, manufacturing, test and assembly resources and unmatched


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    dyna image

    Abstract: No abstract text available
    Text: Table of Contents April 2009. mikroBasic PRO for PIC Reader’s note DISCLAIMER: mikroBASIC PRO for PIC and this manual are owned by mikroElektronika and are protected by copyright law and international copyright treaty. Therefore, you should treat this manual like any other copyrighted material e.g., a book . The manual and the compiler


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    dyna image

    Abstract: No abstract text available
    Text: mikroPascal PRO for PIC April 2009. Reader’s note DISCLAIMER: mikroPASCAL PRO for PIC and this manual are owned by mikroElektronika and are pro- Reader’s Note tected by copyright law and international copyright treaty. Therefore, you should treat this


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    Untitled

    Abstract: No abstract text available
    Text: PS5162 PS501 Two-Cell Battery Manager Module with LED SOC Display for Lithium Chemistries Features • PS501 tested, fully populated modules for evaluation • Designed to work with 2 series cell Lithium chemistry configurations • Performs all major Lithium battery management


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    PDF PS5162 PS501 16-bit D-85737 NL-5152 DS21842B-page

    VC 5022

    Abstract: S8242A rshn S-8242A 103AT 103ETB AZ23C5V6 PS501 PS5162 TPCS8209
    Text: PS5162 PS501 Two-Cell Battery Manager Module with LED SOC Display for Lithium Chemistries Features • PS501 tested, fully populated modules for evaluation • Designed to work with 2 series cell Lithium chemistry configurations • Performs all major Lithium battery management


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    PDF PS5162 PS501 16-bit D-85737 NL-5152 DS21842B-page VC 5022 S8242A rshn S-8242A 103AT 103ETB AZ23C5V6 PS5162 TPCS8209

    ethernet PIC18FxxJ60

    Abstract: No abstract text available
    Text: mikroC PRO for PIC April 2009. Reader’s note DISCLAIMER: mikroC PRO for PIC and this manual are owned by mikroElektronika and are protected Reader’s Note by copyright law and international copyright treaty. Therefore, you should treat this manual like any other copyrighted material e.g., a book . The manual and the compiler may not be


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: PS5163 PS501 Three-Cell Battery Manager Module with LED SOC Display for Lithium Chemistries Features • PS501 tested, fully populated modules for evaluation • Designed to work with 3 series cell Lithium chemistry configurations • Performs all major Lithium battery management


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    PDF PS5163 PS501 16-bit D-85737 NL-5152 DS21851B-page

    8254aa

    Abstract: sfd167a SFD-167A VC 5022 DS21818 8254aajft s-8254a S-8254AAJFT-TB 103AT 103ETB
    Text: PS5163 PS501 Three-Cell Battery Manager Module with LED SOC Display for Lithium Chemistries Features • PS501 tested, fully populated modules for evaluation • Designed to work with 3 series cell Lithium chemistry configurations • Performs all major Lithium battery management


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    PDF PS5163 PS501 16-bit D-85737 NL-5152 DS21851B-page 8254aa sfd167a SFD-167A VC 5022 DS21818 8254aajft s-8254a S-8254AAJFT-TB 103AT 103ETB

    STR30125

    Abstract: B 1403 N mg15q6es42
    Text: TOSHIBA MG15Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 1 5 Q 6 E S 4 2 U nit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 7± 0 .g , T.SiCl.^ 7-S±t?.3 7.5±0.3i 5.5Í0.3 1 14±0.3 I Ä 3 14±0.3 l0.5t X8 , 2 -0 5 • The Electrodes are Isolated from Case.


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    PDF MG15Q6ES42 2-93A3A STR30125 B 1403 N mg15q6es42

    SG600EX21

    Abstract: No abstract text available
    Text: _ * •*-> , ;y:; v:^ s v ‘ •*‘-V%’ • > * - > ^ * • •"- : v . - . FEATURES 1. 2. 3. 4. Low trigger current Low on-state voltage High peak turn-off current High current and high voltage ratings APPLICATIONS • • • • Uninterruptible power supply


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    PDF SG600R21 SG800R21 SG600EX21 SG800EX21 SG1000R22 SG1200EX21 SG1400EX21 165JJ 84-3-AC SG600EX21

    TLCS-68000

    Abstract: No abstract text available
    Text: S HI B A UC/UP 54E D TOSHIBA • DDE3 7 1 ti 7 7 S * T 0 S 3 TM P68440 ~ T V 5 2 '* 3 3 - 1 ? 1. INTRODUCTION TLCS-68000 microprocessors utilize state-of-the-art MOS technology to maxim ize performance and throughput. The TMP68440 dual-direct memory access controller


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    PDF P68440 TLCS-68000 TMP68440 DDMA-109 TMP68450)

    TLCS-68000

    Abstract: No abstract text available
    Text: TOSHIBA UC/UP S4E D TO SHIBA m c]DcJ754tì □ 0 2 3 c14b 274 « T O S a TMP68450 —t— IT? - '•V3,- \ 9 1. INTRODUCTION TLCS-68000 microprocessors utilize state-o f-the-art MOS technology to maxim ize performance and throughput. The TMP68450 direct memory access controller (DMAC)


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    PDF J754t TMP68450 TLCS-68000 TMP68450 TLCS68000 DMAC-126

    THMY7280F1BEG-80

    Abstract: TC59S6408BFT THMY7280F1BBG CS13X OA54
    Text: TOSHIBA THMY7280F1 BEG-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 8,388,6O8-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280F1BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT DRAMs and an unbufler on a printed circuit board.


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    PDF THMY7280F1BEG-80 608-WORD 72-BIT THMY7280F1BBG TC59S6408BFT 168-pin PC100 THMY7280F1BEG-80 CS13X OA54

    Untitled

    Abstract: No abstract text available
    Text: TOS H IB A UC/UP 54E J> m TGTTSm 0D53Ö31 TO SH IB A 1. TbB TMP68442 INTRODUCTION TLCS-68000 microprocessors utilize state-of-the-art MOS technology to m axim ize performance and throughput. The TMP68442 extended dual-direct memory access controller (EDDMA) is designed to com plem ent the perform ance and a rch ite ctu ral


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    PDF TMP68442 TLCS-68000 TMP68442 TMP68450) EDDMA-109