MG1200V1US51
Abstract: set igbt on off Vge
Text: MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT MG1200V1US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES High Input Impedance Enhancement Mode Electrodes are isolated from case. EQUIVALENT CIRCUIT MAXIMUM RATINGS Ta = 25°C
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MG1200V1US51
MG1200V1US51
set igbt on off Vge
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MG1200V1us51
Abstract: No abstract text available
Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with
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Original
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PDF
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MG1200V1US51/
MG1800V1US51
MG1200V1us51
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MG1200V1us51
Abstract: No abstract text available
Text: MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT MG1200V1US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES High Input Impedance Enhancement Mode Electrodes are isolated from case. EQUIVALENT CIRCUIT MAXIMUM RATINGS Ta = 25°C
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Original
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PDF
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MG1200V1US51
MG1200V1us51
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Untitled
Abstract: No abstract text available
Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with
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Original
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PDF
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MG1200V1US51/
MG1800V1US51
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Untitled
Abstract: No abstract text available
Text: MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT MG1200V1US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES l High Input Impedance l Enhancement Mode l Electrodes are isolated from case. EQUIVALENT CIRCUIT MAXIMUM RATINGS Ta = 25°C
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MG1200V1US51
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VQE 23 E
Abstract: MG1200V1US51
Text: TOSHIBA MG1200V1US51 TOSHIBA GTR MODULE SILICON N-CHANNEL IGBT M G 1 2 0 0 V 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES • High Input Impedance • Enhancement Mode • Electrodes are isolated from case. EQUIVALENT CIRCUIT
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OCR Scan
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MG1200V1US51
VQE 23 E
MG1200V1US51
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