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    TOSHIBA RF SEMICONDUCTOR 2014 Search Results

    TOSHIBA RF SEMICONDUCTOR 2014 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA RF SEMICONDUCTOR 2014 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD TRANSISTOR H2A NPN

    Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
    Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


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    Text: TA4107F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4107F 1 GHz Band Down Converter Application CATV Analog/Digital Tuner Terrestrial Digital TV Tuner Features • Low distortion at high RF signal input IIP3 : +13dBmW • Performance at low Lo signal input: −5dBmW


    Original     		PDF TA4107F 13dBmW 4107F

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    Text: TC75S61TU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S61TU Single Operational Amplifier Low Noise Operational Amplifier TC75S61TU Features • Low Noise Operational Amplifier: VNI = 15 nV/√Hz(typ.) at VDD=3.3 V • Small Phase Delay: -2.5 degree (typ.)


    Original     		PDF TC75S61TU SON5-P-0202-0

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    Text: TC75S51F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S51F, TC75S51FU, TC75S51FE Single Operational Amplifier The TC75S51F/TC75S51FU/TC75S51FE is a CMOS singleoperation amplifier which incorporates a phase compensation circuit. It is designed with a low-voltage and low-current power


    Original     		PDF TC75S51F/FU/FE TC75S51F, TC75S51FU, TC75S51FE TC75S51F/TC75S51FU/TC75S51FE TC75S51F TC75S51FU

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    Abstract: No abstract text available
    Text: TC75S63TU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S63TU Single Operational Amplifier Low Noise Operational Amplifier TC75S63TU Features • Low Noise. VNI = 7.8nV/√Hz (typ.) @ VDD = 3.3 V • Small Phase Delay. -2.5 degrees @VDD = 3.3 V (typ.), f = 2kHz


    Original     		PDF TC75S63TU SON5-P-0202-0

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    Text: TC75S101F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S101F, TC75S101FU, TC75S101FE Single Operational Amplifier Input and Output Full Range Features • TC75S101F Input and Output Full Range • Low-input offset voltage : VIO = 3.0 mV (max.)


    Original     		PDF TC75S101F/FU/FE TC75S101F, TC75S101FU, TC75S101FE TC75S101F TC75S101F/FU TC75S101FU

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    Text: TC75S54F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S54F, TC75S54FU, TC75S54FE Single Operational Amplifier The TC75S54F/TC75S54FU/TC75S54FE is a CMOS singleoperation amplifier which incorporates a phase compensation circuit. It is designed for use with a low-voltage, low-current


    Original     		PDF TC75S54F/FU/FE TC75S54F, TC75S54FU, TC75S54FE TC75S54F/TC75S54FU/TC75S54FE TC75S54F TC75S54FU

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    Text: TC75S60F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S60F, TC75S60FU Single Operational Amplifier TC75S60F, TC75S60FU are CMOS operational amplifier with low supply voltage, low supply current. TC75S60F Features • High slew rate: SR VDD = 3 V = 5.1 V/ s (typ.)


    Original     		PDF TC75S60F/FU TC75S60F, TC75S60FU TC75S60FU TC75S60F

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    Abstract: No abstract text available
    Text: TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 6.5 mA • Wide band: f = 2.0 GHz 3dB down • Operating supply voltage: VCC = 1.5 to 2.2 V Weight: 0.003 g (typ.)


    Original     		PDF TA4012AFE

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    Text: TA4011AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4011AFE UHF Wide Band Amplifier Applications Features • Low current: ICC = 3.5 mA • Wide band: f = 2.4 GHz 3dB down • Operating supply voltage: VCC = 1.5 to 3 V Weight: 0.003 g (typ.)


    Original     		PDF TA4011AFE

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    Text: TC75S55F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S55F, TC75S55FU, TC75S55FE Single Operational Amplifier The TC75S55F/TC75S55FU/TC75S55FE is a CMOS singleoperation amplifier which incorporates a phase compensation circuit. It is designed for use with a low-voltage, low-current


    Original     		PDF TC75S55F/FU/FE TC75S55F, TC75S55FU, TC75S55FE TC75S55F/TC75S55FU/TC75S55FE TC75S55F TC75S55FU

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    Abstract: No abstract text available
    Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF 2SK3075

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    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


    Original     		PDF 2SK3074 630mW

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    Abstract: No abstract text available
    Text: TC75W60FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC75W60FU, TC75W60FK Dual Operational Amplifier TC75W60FU Features • High slew rate • Single and dual power Supply operations are possible. : VDD = ±0.9 to 3.5 V or 1.8 to 7 V : SR VDD = 3 V = 5.1 V/ s (typ.)


    Original     		PDF TC75W60FU/FK TC75W60FU, TC75W60FK TC75W60FU

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    Abstract: No abstract text available
    Text: JDP3C04TU TOSHIBA Diode Silicon Epitaxial Pin Type JDP3C04TU VHF~UHF Band RF Attenuator Applications Unit: mm 2.1±0.1 Useful for small size package Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 50 V Forward current


    Original     		PDF JDP3C04TU

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    Text: 2SC4215 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4215 High Frequency Amplifier Applications FM, RF, MIX, IF Amplifier Applications Unit: mm • Small reverse transfer capacitance: Cre = 0.55 pF typ. • Low noise figure: NF = 2dB (typ.) (f = 100 MHz)


    Original     		PDF 2SC4215

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    Text: JDP4P02AT TOSHIBA Diode Silicon Epitaxial PIN Type JDP4P02AT UHF~VHF Band RF Switch Applications Unit: mm • Low capacitance: CT = 0.3 pF typ. Characteristics Symbol Rating Unit Reverse voltage VR 30 V Forward current IF 50 mA Junction temperature Tj 150


    Original     		PDF JDP4P02AT

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    Text: JDP3C02AU TOSHIBA Diode Silicon Epitaxial PIN Type JDP3C02AU UHF~VHF Band RF Switch Applications Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 3-pin small packages. • Low series resistance: rs = 1.0 Ω typ.


    Original     		PDF JDP3C02AU

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    Text: JDP2S08SC TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S08SC Unit: mm • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ. • Low capacitance: CT = 0.21 pF (typ.)


    Original     		PDF JDP2S08SC

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    Text: 2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications FM, RF, MIX, If Amplifier Applications Unit: mm • Small reverse transfer capacitance: Cre = 0.55 pF typ. • Low noise figure: NF = 2.3dB (typ.)


    Original     		PDF 2SC4915

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    Text: JDP2S02ACT TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02ACT Unit: mm UHF~VHF Band RF Switch Applications • Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. • Low series resistance: rs = 1.0 Ω typ.


    Original     		PDF JDP2S02ACT

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    Abstract: No abstract text available
    Text: 2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


    Original     		PDF 2SK2854

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    Text: 3SK293 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK293 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 16 fF typ. • Low noise figure: NF = 1.5dB (typ.)


    Original     		PDF 3SK293

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    Text: 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 20 fF typ. • Low noise figure: NF = 1.4dB (typ.)


    Original     		PDF 3SK294