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    TOSHIBA NAND 224 PIN Search Results

    TOSHIBA NAND 224 PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4011BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, 2-Input/NAND, DIP14 Visit Toshiba Electronic Devices & Storage Corporation
    TC4093BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, 2-Input/NAND, DIP14 Visit Toshiba Electronic Devices & Storage Corporation
    TC74HC00AP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Quad 2-Input/NAND, DIP14 Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G00NX Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), 2-Input/NAND, XSON6, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7SH00FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), 2-Input/NAND, SOT-353 (USV), -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA NAND 224 PIN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TC58NVG2S0FTA00

    Abstract: No abstract text available
    Text: TC58NVG2S0FTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks.


    Original     		TC58NVG2S0FTA00 TC58NVG2S0F 2048blocks. 4320-byte TC58NVG2S0FTA00 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG2S0FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks.


    Original     		TC58NVG2S0FTAI0 TC58NVG2S0F 2048blocks. 4320-byte PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S0F is a single 1.8V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks.


    Original     		TC58NYG2S0FBAI4 TC58NYG2S0F 2048blocks. 4320-byte PDF

    Untitled

    Abstract: No abstract text available
    Text: TC58NVG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks.


    Original     		TC58NVG2S0FBAI4 TC58NVG2S0F 2048blocks. 4320-byte PDF

    Toshiba NAND BGA 224

    Abstract: toshiba TC200 Toshiba BGA 224 TC200 TC220C TC223 ASIC tc220
    Text: TOSHIBA TC220/223 SLI ASIC 0.3µm Standard Cell, Embedded Arrays, Gate Arrays Description The 0.3µm drawn TC220/223 ASIC technology provides the optimum density and performance needed for System-Level Integration SLI IC designs. • Accurate delay modeling ensures system


    Original     		TC220/223 TC223 Toshiba NAND BGA 224 toshiba TC200 Toshiba BGA 224 TC200 TC220C TC223 ASIC tc220 PDF

    74AHC374m

    Abstract: 74AHCT74M rca 349 74AHC374N T flip flop IC 74AHC139N 74ahc00 ti 74AHC32N 74AHC245M rca 448
    Text: 74AHC & 74AHCT Standard Logic, T.I. & Others Thousands of new ICs are in the pipeline for addition and not shown below. Call us to see if you can save 10-30%. Family AHC T Package DIP SOIC TI SN74AHC(T)XXXN SN74AHC(T)XXXD/DW Jameco 74AHC(T)XXXN 74AHC(T)XXXM


    Original     		74AHC 74AHCT SN74AHC 74AHC MM74VHC MC74VHC M74VHC 74AHC374m 74AHCT74M rca 349 74AHC374N T flip flop IC 74AHC139N 74ahc00 ti 74AHC32N 74AHC245M rca 448 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC4SUHF C2 MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4SU11F 2 INPUT NAND GATE UnlC in mm +0.2 23 -0.3 TC4SU11F is a 2-input NAND gate, containing basic NAND circuit without the waveform shaping inverter. + 0.2 1 6 - 0.1 3- Therefore, this is suitable for applications in


    OCR Scan     		TC4SU11F Tt-25 -50pr PDF

    toshiba emmc

    Abstract: 153 ball eMMC memory toshiba 16GB Nand flash emmc THGBM MMC04G toshiba 8GB Nand flash bga 4GB eMMC toshiba THGBM1G5D2EBAI7 toshiba 8GB Nand flash emmc "Manufacturer ID" eMMC
    Text: THGBM1GxDxEBAIx TOSHIBA e-MMC Module 1GB / 2GB / 4GB / 8GB / 16GB / 32GB THGBM1GxDxEBAIx Series INTRODUCTION THGBM1GxDxEBAIx series are 1-GB , 2-GB , 4-GB , 8-GB , 16-GB and 32-GB densities of e-MMC Module products housed in 153/169 ball BGA package. This unit is utilized advanced TOSHIBA NAND flash device s and controller chip


    Original     		16-GB 32-GB toshiba emmc 153 ball eMMC memory toshiba 16GB Nand flash emmc THGBM MMC04G toshiba 8GB Nand flash bga 4GB eMMC toshiba THGBM1G5D2EBAI7 toshiba 8GB Nand flash emmc "Manufacturer ID" eMMC PDF

    TC17G Series

    Abstract: 74HC family Application Notes toshiba tc110g toshiba tc17g SEMI-E-S1001 TC110G38 1 gate toshiba logic TTL Logic Family list DAP macro language TOSHIBA Gate array macro cell
    Text: TOSHIBA ASIC TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. CMOS GATE ARRAY TC1TOGSERESGITE /«RAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC2MOS/VLSI


    OCR Scan     		TC110G TC17G TC17G Series 74HC family Application Notes toshiba tc110g toshiba tc17g SEMI-E-S1001 TC110G38 1 gate toshiba logic TTL Logic Family list DAP macro language TOSHIBA Gate array macro cell PDF

    Toshiba emmc

    Abstract: THGBM eMMC data retention Toshiba NAND BGA 224 P-TFBGA153-1113-0 THGBM3G4D1FBAIG BGA 221 eMMC toshiba Toshiba emmc performance THGBM3G
    Text: Preliminary THGBM3G4D1FBAIG TOSHIBA e-MMC Module 2GB THGBM3G4D1FBAIG INTRODUCTION THGBM3G4D1FBAIG is 2-GByte density of e-MMC Module product housed in 153 ball BGA package. This unit is utilized advanced TOSHIBA NAND flash device s and controller chip assembled as Multi Chip Module.


    Original     		P-TFBGA153-1113-0 Toshiba emmc THGBM eMMC data retention Toshiba NAND BGA 224 THGBM3G4D1FBAIG BGA 221 eMMC toshiba Toshiba emmc performance THGBM3G PDF

    Toshiba NAND BGA 224

    Abstract: Toshiba emmc Toshiba BGA 224 toshiba emmc 4.41 4GB eMMC toshiba THGBM THGBM3G emmc jedec THGBM3G5 THGB
    Text: Preliminary THGBM3G5D1FBAIE TOSHIBA e-MMC Module 4GB THGBM3G5D1FBAIE INTRODUCTION THGBM3G5D1FBAIE is 4-GByte density of e-MMC Module product housed in 169 ball BGA package. This unit is utilized advanced TOSHIBA NAND flash device s and controller chip assembled as Multi Chip Module.


    Original     		P-TFBGA169-1216-0 Toshiba NAND BGA 224 Toshiba emmc Toshiba BGA 224 toshiba emmc 4.41 4GB eMMC toshiba THGBM THGBM3G emmc jedec THGBM3G5 THGB PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ASIC TO S H IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. CMOS ASIC 1C120G SERESGITE /«RAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in highperformance systems.


    OCR Scan     		1C120G TC120G MA01803 MAS-0053/6-89 PDF

    toshiba tc110g

    Abstract: toshiba toggle nand TC17G Series toshiba tc17g TC110G11 specifications of basic logic gates 74 series TC17G TC110G21 TC110G38 VLSI TECHNOLOGY
    Text: ASIC TOSHIBA TOSHIBA AMERICA ELECTRONIC COMPONENTS, IIMC. CMOS GATE ARRAY TCllOG SERIES GITE ¿RRAY Toshiba introduces the new generation gate arrays — The TC110G series— capable of integrating 5X more than the TC17G series. Uses Toshiba’s proprietary HC2MOS/VLSI


    OCR Scan     		TC110G TC17G toshiba tc110g toshiba toggle nand TC17G Series toshiba tc17g TC110G11 specifications of basic logic gates 74 series TC110G21 TC110G38 VLSI TECHNOLOGY PDF

    74HC00 SN74HC00D 74HC Series IC

    Abstract: 74hc00t quad 74HC04 NOT GATE datasheet 74hc08m 74HC00M 74HC08T 74hc04n TI 74HC00 74hc00 datasheet 74HC04 Toshiba
    Text: 74ABT & 74HC Standard Logic, T.I. & Others Thousands of new ICs are in the pipeline for addition and not shown below. Call us to see if you can save 10-30%. Semiconductors 74ABTXXX CMOS Logic Competitive Cross Reference Guide Family ABT Package DIP SOIC TI


    Original     		74ABT 74ABTXXX SN74ABTXXXN SN74ABTXXXD/DW 74ABTXXXN 74ABTXXXD 74ABTXXXPC 74ABTXXXSC 74HC00 SN74HC00D 74HC Series IC 74hc00t quad 74HC04 NOT GATE datasheet 74hc08m 74HC00M 74HC08T 74hc04n TI 74HC00 74hc00 datasheet 74HC04 Toshiba PDF

    Untitled

    Abstract: No abstract text available
    Text: TC4SU11F C 2 M O S DIGITAL IN TEG RATED C IR C U IT S ILIC O N M ONOLITHIC TC4SU11F 2 INPUT NAND GATE U n lC In mm + 0.2 2.8 - 0.3 TC4SU11F is a 2-input NAM’D gate, containing basic NAM'D circuit without the waveform shaping inverter. + 0.2 16-0.1 E£- Therefore, this is suitable for applications in


    OCR Scan     		TC4SU11F TC4SU11F Tr-25TC. PDF

    TOSHIBA TC160G

    Abstract: Toshiba NAND 67 Bga 568ps tc160g TC190G04 tc170g TC190G TC190G02 TC190G10 C2878
    Text: TOSHIBA System ASIC TC190 Series CMOS ASICs 0.6µ 3.0/3.3V ASIC Family The 0.6µm, 5V TC190 ASIC series provides higher system performance and device integration with lower power than previous generation 5V families. Highly accurate delay models, area efficient memory cells and a very fine pitch TAB bonding capability


    Original     		TC190 TC190G) TC190E) TC190C) TC190E TOSHIBA TC160G Toshiba NAND 67 Bga 568ps tc160g TC190G04 tc170g TC190G TC190G02 TC190G10 C2878 PDF

    toshiba tc110g

    Abstract: CMOS GATE ARRAYs toshiba TC110G toshiba toggle nand 74HC inverter tri-state output TOSHIBA Gate array macro cell 110G TC120G38 TC120G75 TC120GA0
    Text: ASIC TOSH IBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N T S , INC. CMOS ASIC TC120G SKES GOTE-4RRAY Toshiba Corporation has introduced a series of gate arrays that use a 1.0-micron CMOS process to reduce gate delays by 35%. Applications include consolidating high-speed circuits into a single package, especially in high­


    OCR Scan     		1C120G TC120G Suite205 CA92680 MA01803 5555Triangle MAS-0053/6-89 toshiba tc110g CMOS GATE ARRAYs toshiba TC110G toshiba toggle nand 74HC inverter tri-state output TOSHIBA Gate array macro cell 110G TC120G38 TC120G75 TC120GA0 PDF

    siemens master drive circuit diagram

    Abstract: SR flip flop IC toshiba tc110g TC110G jk flip flop to d flip flop conversion SC11C1 JK flip flop IC siemens Nand gate scxc1 SR flip flop IC pin diagram
    Text: SIEM EN S ASIC Product Description SCxC1 Family CMOS Gate Arrays FEATURES • Alternate source of Toshiba TC110G family ■ Densities up to 129,000 raw gates ■ Channelless “ sea of gates” architecture ■ 1.5 firn drawn CMOS technology, scalable to 1.0 /¿m


    OCR Scan     		TC110G M33S004 siemens master drive circuit diagram SR flip flop IC toshiba tc110g jk flip flop to d flip flop conversion SC11C1 JK flip flop IC siemens Nand gate scxc1 SR flip flop IC pin diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TO S H IB A A M E R IC A ELECTRONIC C O M P O N E N TS , INC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 10OK useable gates—one of the highest in the industry.


    OCR Scan     		TC150G TC110G, TC120G TC140G MAS-0062/3-90 PDF

    TC150GC8

    Abstract: TC150GH2 toshiba tc110g TC140G toshiba tc140g TC110G TC150G89 toshiba toggle nand tc120g
    Text: TOSHIBA TOSHIBA. A M E R IC A ELECTRONIC C O M PO N E N TS , IIMC. 1.0 micron TC150G CMOS Gate Array Description Features The TC150G series of triple-layer metal, 1.0 micron gate arrays has a 0.4ns gate speed and up to 100K useable gates— one of the highest in the industry.


    OCR Scan     		TC150GCMOS TC150G TC110G, TC120G TC140G wo220 MAS-0062/3-90 TC150GC8 TC150GH2 toshiba tc110g toshiba tc140g TC110G TC150G89 toshiba toggle nand PDF

    Untitled

    Abstract: No abstract text available
    Text: Lucent Technologies ND14 NAND FlashTAD— CID/AECS Information Manual August 1998 2 General Specifications 2.1 User Hardware Basics 2.1.1 Power Supply System power supply requirements are 5.0 VDC. For additional information, see the following sections of the DSP1609 data sheet: Table 2. DSP1609 Power Supply


    OCR Scan     		DSP1609 PDF

    TC140G44

    Abstract: TC140G27 toshiba tc140g
    Text: TOSHIBA TO SH IB A A M E R IC A ELECTRO NIC C O M P O N E N T S , INC. 1.0 micron TC140G CMOS Gate Array Description Features The TC140G series of 1.0 micron gate arrays has a 0.4ns gate speed and up to 172K raw gates. — Provides a 35% reduction in delay times compared to


    OCR Scan     		TC140G MAS-0097/3-90 TC140G44 TC140G27 toshiba tc140g PDF

    toshiba c640 schematic diagram

    Abstract: IBM ThinkPad T23 9S12UF32 toshiba c640 dell c640 dell latitude TC58DVG02A1 toshiba Nand flash schematic diagram usb flash ram usb flash drive block diagram
    Text: USB Thumb Drive Designer Reference Manual HCS12 Microcontrollers DRM061 Rev. 0 9/2004 freescale.com USB Thumb Drive Designer Reference Manual by: Kenny Lam, Derek Lau, and Dennis Lui Applications Engineering Microcontroller Division Hong Kong To provide the most up-to-date information, the revision of our documents on the World Wide Web will be


    Original     		HCS12 DRM061 toshiba c640 schematic diagram IBM ThinkPad T23 9S12UF32 toshiba c640 dell c640 dell latitude TC58DVG02A1 toshiba Nand flash schematic diagram usb flash ram usb flash drive block diagram PDF

    tx4961

    Abstract: TX4961XBG TX4961XBG-240 TX4962 BDE0095C Toshiba TX4961XBG tmpr4955bfg-200 TX4938 BDE0188B R4300
    Text: TX49/H3 Core Product Specification Update Rev. 1.6 Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and


    Original     		TX49/H3 ERT-TX49H3-016. TX4961XBG-240 TX4962XBG-120 ERT-TX49H3-017 ERT-TX49H3-018, ERT-TX49H3-019 ERT-TX49H3-020 tx4961 TX4961XBG TX4962 BDE0095C Toshiba TX4961XBG tmpr4955bfg-200 TX4938 BDE0188B R4300 PDF