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    TC58NVG2S0FTAI0 Search Results

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    TC58NVG2S0FTAI0 Price and Stock

    KIOXIA TC58NVG2S0FTAI0

    SLC NAND Flash 3.3V 4Gbit 512K x 8bit 48-Pin TSOP-I - Trays (Alt: TC58NVG2S0FTAI0)
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    Avnet Americas TC58NVG2S0FTAI0 Tray 14 Weeks 96
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    Toshiba America Electronic Components TC58NVG2S0FTAI0B4H

    4 GBIT (512M X 8 BIT) CMOS NAND E2PROM EEPROM, 512MX8, 25ns, Parallel, CMOS, PDSO48
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    ComSIT USA TC58NVG2S0FTAI0B4H 1,430
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    Toshiba America Electronic Components TC58NVG2S0FTAI0

    4 GBIT (512M X 8 BIT) CMOS NAND E2PROM EEPROM, 512MX8, 25ns, Parallel, CMOS, PDSO48
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TC58NVG2S0FTAI0 192
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    TC58NVG2S0FTAI0 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TC58NVG2S0FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NVG2S0FTAI0 TC58NVG2S0F 2048blocks. 4320-byte

    TC58NVG2S0FTA00

    Abstract: TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25
    Text: NAND Flash Memory SLC Middle Capacity Product list of NAND Flash Memory SLC Middle Capacity Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number Serial


    Original     		PDF 48-P-1220- TC58NVM9S3ETAI0 TC58NVM9S3EBAI4 TC58NVM9S3EBAI6 TC58NYM9S3EBAI4 TC58NYM9S3EBAI6 TC58DVG02D5TA00 TC58NVG2S3EBAI5 P-TFBGA63-1013- TC58NYG2S3EBAI5 TC58NVG2S0FTA00 TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25