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    TOSHIBA MOSFET POWER AMP Search Results

    TOSHIBA MOSFET POWER AMP Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA MOSFET POWER AMP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Power MOSFET, toshiba

    Abstract: 2SK3074 HIGH POWER MOSFET TOSHIBA toshiba marking code transistor
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


    Original     		PDF 2SK3074 630mW Power MOSFET, toshiba 2SK3074 HIGH POWER MOSFET TOSHIBA toshiba marking code transistor

    TOSHIBA NOTE

    Abstract: 2SK3074
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


    Original     		PDF 2SK3074 630mW TOSHIBA NOTE 2SK3074

    Untitled

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


    Original     		PDF 2SK3074 630mW

    Untitled

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


    Original     		PDF 2SK3074 630mW

    Untitled

    Abstract: No abstract text available
    Text: 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA


    Original     		PDF 2SK3074 630mW

    Untitled

    Abstract: No abstract text available
    Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF 2SK3075

    Untitled

    Abstract: No abstract text available
    Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF 2SK3075

    Untitled

    Abstract: No abstract text available
    Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF 2SK3075

    RFM08U9X

    Abstract: No abstract text available
    Text: RFM08U9X TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RFM08U9X RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF RFM08U9X RFM08U9X

    Untitled

    Abstract: No abstract text available
    Text: RFM08U9X TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RFM08U9X RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF RFM08U9X

    2SK3075

    Abstract: 2SK3075 MOSFET TRANSISTOR TOSHIBA Semiconductor Reliability Handbook Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
    Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF 2SK3075 2SK3075 2SK3075 MOSFET TRANSISTOR TOSHIBA Semiconductor Reliability Handbook Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA

    RFM08U9X

    Abstract: No abstract text available
    Text: RFM08U9X TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RFM08U9X RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF RFM08U9X RFM08U9X

    Untitled

    Abstract: No abstract text available
    Text: 2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF− and UHF−Band Power Amplifier Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF 2SK3075

    Untitled

    Abstract: No abstract text available
    Text: RFM08U9X TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RFM08U9X RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original     		PDF RFM08U9X

    Untitled

    Abstract: No abstract text available
    Text: TPD7102F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7102F 1 channel High-Side N channel Power MOSFET Gate Driver TPD7102F is a 1channel high-side N channel power MOSFET gate driver. This IC contains a charge pump circuit, allowing easy configuration


    Original     		PDF TPD7102F TPD7102F SON8-P-0303-0 D7102

    SON8-P-0303-0

    Abstract: No abstract text available
    Text: TPD7102F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7102F 1 channel High-Side N channel Power MOSFET Gate Driver TPD7102F is a 1channel high-side N channel power MOSFET gate driver. This IC contains a charge pump circuit, allowing easy configuration


    Original     		PDF TPD7102F TPD7102F SON8-P-0303-0 D7102

    Untitled

    Abstract: No abstract text available
    Text: TPD7102F TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD7102F 1 channel High-Side N channel Power MOSFET Gate Driver TPD7102F is a 1channel high-side N channel power MOSFET gate driver. This IC contains a charge pump circuit, allowing easy configuration


    Original     		PDF TPD7102F TPD7102F SON8-P-0303-0 D7102

    tlp250 application note

    Abstract: tlp250 tlp2501 TLP250 application igbt drive tlp250 TLP251
    Text: IGBT/Power MOSFET Gate Drive Photo-IC Couplers TLP250 INV /TLP250F(INV) NEW PRODUCT GUIDE IGBT / POWER MOSFET GATE DRIVE PHOTO-IC COUPLERS TLP250 (INV) / TLP250F (INV) The Toshiba TLP250 (INV) and TLP250F (INV) are 8-pin photocouplers designed exclusively for use in IGBT


    Original     		PDF TLP250 /TLP250F TLP250 TLP250F tlp250 application note tlp2501 TLP250 application igbt drive tlp250 TLP251

    TLP350

    Abstract: 20CG10 E67349 EN60747-5-2 tlp350 IGBT gate drive inverter
    Text: TLP350 Preliminary TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP350 Industrial Inverter Inverter for Air Conditioner IGBT/Power MOSFET Gate Drive IH Induction Heating Unit: mm The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an integrated photodetector.


    Original     		PDF TLP350 TLP350 UL1577 20CG10 E67349 EN60747-5-2 tlp350 IGBT gate drive inverter

    TLP350

    Abstract: tlp350 IGBT gate drive inverter schematic diagram inverter air conditioner E67349
    Text: TLP350 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP350 Industrial Inverter Inverter for Air Conditioner IGBT/Power MOSFET Gate Drive IH Induction Heating Unit: mm The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an integrated photodetector.


    Original     		PDF TLP350 TLP350 tlp350 IGBT gate drive inverter schematic diagram inverter air conditioner E67349

    E67349

    Abstract: TLP350 igbt control circuit for induction heating
    Text: TLP350 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP350 Industrial Inverter Inverter for Air Conditioner IGBT/Power MOSFET Gate Drive IH Induction Heating Unit: mm The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an integrated photodetector.


    Original     		PDF TLP350 TLP350 E67349 igbt control circuit for induction heating

    TLP350

    Abstract: tlp350 IGBT gate drive inverter schematic diagram inverter air conditioner E67349
    Text: TLP350 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP350 Industrial Inverter Inverter for Air Conditioner IGBT/Power MOSFET Gate Drive IH Induction Heating Unit: mm The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an integrated photodetector.


    Original     		PDF TLP350 TLP350 tlp350 IGBT gate drive inverter schematic diagram inverter air conditioner E67349

    TLP350

    Abstract: tlp350 IGBT gate drive inverter TOSHIBA IGBT DATA BOOK E67349 EN60747-5-2 tlp3509
    Text: TLP350 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP350 Industrial Inverter Inverter for Air Conditioner IGBT/Power MOSFET Gate Drive IH Induction Heating Unit: mm The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an integrated photodetector.


    Original     		PDF TLP350 TLP350 tlp350 IGBT gate drive inverter TOSHIBA IGBT DATA BOOK E67349 EN60747-5-2 tlp3509

    tlp350 IGBT gate drive inverter

    Abstract: tlp350
    Text: TLP350 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP350 Industrial Inverter Inverter for Air Conditioner IGBT/Power MOSFET Gate Drive IH Induction Heating Unit: mm The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an integrated photodetector.


    Original     		PDF TLP350 TLP350 UL1577 E67349 tlp350 IGBT gate drive inverter