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    TOSHIBA MARKING INFORMATION Search Results

    TOSHIBA MARKING INFORMATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA MARKING INFORMATION Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TA4100F

    Abstract: toshiba Bipolar Linear Integrated Circuit Silicon
    Text: TA4100F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4100F UHF VHF RF, MIX Application Features High fT. fT = 5 GHz Differential circuit is composed of 3 transistors. Pin Assignment (top view) Marking Weight: 0.013 g (typ.) 000707EBA1 • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general


    Original     		PDF TA4100F 000707EBA1 TA4100F toshiba Bipolar Linear Integrated Circuit Silicon

    2SJ346

    Abstract: 2SK1829
    Text: 2SJ346 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1829 Marking


    Original     		PDF 2SJ346 2SK1829 SC-70 2SJ346 2SK1829

    TCS20

    Abstract: No abstract text available
    Text: TCS20DPC TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS20DPC Digital Output Magnetic Sensor Features Push-Pull Output South-Pole and North-Pole Detections CSON6-P-0.45 CST6C Weight: 2.0 mg (Typ.) Marking Pin Assignment (Top View) Product Name


    Original     		PDF TCS20DPC TCS20

    2SJ347

    Abstract: 2SK1830
    Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1830 Marking


    Original     		PDF 2SJ347 2SK1830 2SJ347 2SK1830

    2SJ345

    Abstract: 2SK1828
    Text: 2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1828 Marking


    Original     		PDF 2SJ345 2SK1828 O-236MOD SC-59 2SJ345 2SK1828

    TCS10DLU

    Abstract: No abstract text available
    Text: TCS10DLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS10DLU Digital-Output Magnetic Sensor Feature Open-Drain Output South-Pole or North-Pole Detection UFV Weight: 0.007 g typ. Marking Pin Assignment (top view) VCC (Note1) GND2 (Note 2)


    Original     		PDF TCS10DLU TCS10DLU

    Untitled

    Abstract: No abstract text available
    Text: TCS10DLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS10DLU Digital-Output Magnetic Sensor Feature Open-Drain Output South-Pole or North-Pole Detection UFV Weight: 0.007 g typ. Marking Pin Assignment (top view) VCC (Note1) GND2 (Note 2)


    Original     		PDF TCS10DLU

    Digital-Output Magnetic Sensor

    Abstract: No abstract text available
    Text: TCS10DLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS10DLU Digital-Output Magnetic Sensor Feature Open-Drain Output South-Pole or North-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note1) GND2 (Note 2) 5


    Original     		PDF TCS10DLU Digital-Output Magnetic Sensor

    Untitled

    Abstract: No abstract text available
    Text: TCS10DLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS10DLU Digital-Output Magnetic Sensor Feature Open-Drain Output South-Pole or North-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note1) GND2 (Note 2) 5


    Original     		PDF TCS10DLU

    Untitled

    Abstract: No abstract text available
    Text: TCS20DLR TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS20DLR Digital Output Magnetic Sensor Feature Open-Drain Output South-Pole and North-Pole Detections SON3-P-0203-1.90 SOT-23F Weight: 11.0 mg typ. Marking Pin Assignment (Top View) GND


    Original     		PDF TCS20DLR SON3-P-0203-1 OT-23F

    2SJ345

    Abstract: 2SK1828 Toshiba 2SJ
    Text: 2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1828 Marking Unit: mm


    Original     		PDF 2SJ345 2SK1828 O-236MOD SC-59 2SJ345 2SK1828 Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: TCS20DLR TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS20DLR Digital Output Magnetic Sensor Feature Open-Drain Output South-Pole and North-Pole Detections SON3-P-0203-1.90 SOT-23F Weight: 11.0 mg typ. Marking Pin Assignment (Top View) GND


    Original     		PDF TCS20DLR SON3-P-0203-1 OT-23F

    TA4100F

    Abstract: No abstract text available
    Text: TA4100F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4100F UHF VHF RF, MIX Application Features l High fT. fT = 5 GHz l Differential circuit is composed of 3 transistors. Pin Assignment (top view) Marking Weight: 0.013 g (typ.) 000707EBA1


    Original     		PDF TA4100F 000707EBA1 TA4100F

    2SJ345

    Abstract: 2SK1828
    Text: 2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V · High speed · Small package · Complementary to 2SK1828 Marking Unit: mm


    Original     		PDF 2SJ345 2SK1828 SC-59 O-236MOD 2SJ345 2SK1828

    Untitled

    Abstract: No abstract text available
    Text: TCS10DLU TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS10DLU Digital-Output Magnetic Sensor Feature Open-Drain Output South-Pole or North-Pole Detection UFV Weight: 7.0 mg typ. Marking Pin Assignment (top view) VCC (Note1) GND2 (Note 2) 5


    Original     		PDF TCS10DLU

    TG2202F

    Abstract: No abstract text available
    Text: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP VIEW) VC2 OUT MARKING GND Type name


    OCR Scan     		PDF TG2202F 961001EBC1 907GHz TG2202F

    TG2202F

    Abstract: No abstract text available
    Text: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9GHz BAND ATTENUATOR PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP VIEW) v C2 out MARKING gnd Type name


    OCR Scan     		PDF TG2202F 961001EBC1 907GHz TG2202F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT T r i ? ? n ? GaAs MONOLITHIC F 1.9G H z BAND ATTENUATO R PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP VIEW) V C2 OUT MARKING


    OCR Scan     		PDF TG2202F

    HN3C13F

    Abstract: No abstract text available
    Text: TOSHIBA HN3C13F TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C13F Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS 2.8 Including Two Devices in SM6 Super Mini Type with 6 Leads - 1 SYMBOL VCBO VCEO Ve b o ic Ib Pc* Tj MARKING


    OCR Scan     		PDF HN3C13F HN3C13F

    HN3C14F

    Abstract: No abstract text available
    Text: HN3C14F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 14 F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO v EBO ic Ib MARKING


    OCR Scan     		PDF HN3C14F HN3C14F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TG2200F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2200F 1.9GHz BAND ANTENNA SWITCH PHS DIGITAL CORDLESS TELEPHONE FEATURES • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP V IEW ) VC i R F 1 (RX) MARKING G N D RFcom (A N T ) Type nam e


    OCR Scan     		PDF TG2200F

    HN3C15F

    Abstract: No abstract text available
    Text: HN3C15F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 15F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) MARKING 6 5 4 Fl F» FI- Type Name


    OCR Scan     		PDF HN3C15F HN3C15F

    TG2200F

    Abstract: No abstract text available
    Text: TOSHIBA TG2200F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2200F 1.9GHz BAND ANTENNA SWITCH PHS DIGITAL CORDLESS TELEPHONE FEATURES • CONTROL VOLTAGE : 0V/3V PIN CONNECTION (TOP V IEW ) VC i R F 1 (RX) MARKING G N D RFcom (A N T ) Type nam e


    OCR Scan     		PDF TG2200F 961001EBC1 600kHz 900kHz TG2200F

    "MARKING TE" US6

    Abstract: 2301 mini transistor
    Text: [3 ] Application Information 1. Overview 2. Device Marking [ 3 ] Application Information 1. Overview Toshiba B ias Resistor Transistors BR T s each contain a built-in base series resistor and baseem itter bias resistor. This helps you reduce the parts count in circuits to m iniaturize equipment


    OCR Scan     		PDF TE12L. TE12H. "MARKING TE" US6 2301 mini transistor