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    TOSHIBA MARKING DL Search Results

    TOSHIBA MARKING DL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA MARKING DL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    Untitled

    Abstract: No abstract text available
    Text: TJ15S10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ15S10M3 1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)


    Original     		PDF TJ15S10M3

    Untitled

    Abstract: No abstract text available
    Text: TJ15S10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ15S10M3 1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)


    Original     		PDF TJ15S10M3

    Untitled

    Abstract: No abstract text available
    Text: TJ15S10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ15S10M3 1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)


    Original     		PDF TJ15S10M3

    zener diode 1NU 9F

    Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
    Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:


    Original     		PDF BCE0001A BCE0001B zener diode 1NU 9F diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5

    TK12A50D

    Abstract: TK12A50D5
    Text: TK12A50D5 MOSFETs Silicon N-Channel MOS π-MOS TK12A50D5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 120 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.5 Ω (typ.)


    Original     		PDF TK12A50D5 O-220SIS TK12A50D TK12A50D5

    TK10A60D5

    Abstract: TK10A60D
    Text: TK10A60D5 MOSFETs Silicon N-Channel MOS π-MOS TK10A60D5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.8 Ω (typ.)


    Original     		PDF TK10A60D5 O-220SIS TK10A60D5 TK10A60D

    Untitled

    Abstract: No abstract text available
    Text: 1DL42A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL42A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V · Average Forward Current: IF (AV) = 1.0 A · Very Fast Reverse-Recovery Time: trr = 35 ns (max)


    Original     		PDF 1DL42A

    TOSHIBA DLA

    Abstract: TOSHIBA RECTIFIER
    Text: 1DL41A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL41A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V · Average Forward Current: IF (AV) = 1.0 A (Ta = 64°C) · Very Fast Reverse-Recovery Time: trr = 35 ns (max)


    Original     		PDF 1DL41A TOSHIBA DLA TOSHIBA RECTIFIER

    Untitled

    Abstract: No abstract text available
    Text: 1DL42A TOSHIBA High Efficiency Rectifier HED Silicon Epitaxial Junction Type 1DL42A Switching Mode Power Supply Applications • Unit: mm Repetitive Peak Reverse Voltage: VRRM = 200 V • Average Forward Current: IF (AV) = 1.0 A • Very Fast Reverse-Recovery Time: trr = 35 ns (max)


    Original     		PDF 1DL42A

    2SJ439

    Abstract: No abstract text available
    Text: 2SJ439 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSV 2SJ439 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 2.5 V gate drive Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance


    Original     		PDF 2SJ439 2SJ439

    U1DL44A

    Abstract: No abstract text available
    Text: U1DL44A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE U1DL44A Unit: mm SWITCHING MODE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : VRRM = 200 V Average Forward Current Very Fast Reverse-Recovery Time : IF (AV) = 1.0 A


    Original     		PDF U1DL44A 150oducts U1DL44A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TG2202F TOSHIBA GaAs LINEAR INTEGRATED CIRCUIT GaAs MONOLITHIC TG2202F 1.9G H z BAND ATTENUATO R PHS DIGITAL CORDLESS TELEPHONE FEATURES • ATTENUATION : ATT = 22dB (Typ.) • CONTROL VOLTAGE : 0 V /3 V PIN CONNECTION (TOP VIEW) VC2 OUT MARKING


    OCR Scan     		PDF TG2202F 961001EBC1

    1s1588

    Abstract: Diode 1S1588 1S1587 1S1536 1s85
    Text: TOSHIBA -CDISCRETE/0PT03- 9097250 TOSHIBA ~ b7 Dlf| ^ 7 2 5 0 DISCRETE/OPTO _ 67C_09299_. 1S1585—1S1588 Silicon Epitaxial' Planar Type Diode ULTRA HIGH SPEED SWITCHING APPLICATIONS. FEATURES: Low Forward Voltage : Vf =1.0V (Max.) . Small Total Capacitance : Cx=2pF (Max.)


    OCR Scan     		PDF -CDISCRETE/0PT03- 1S1585--1S1588 1S1585 1S1536 1S1587 1S1588 Diode 1S1588 1s85

    Untitled

    Abstract: No abstract text available
    Text: 1SV313 T O SH IB A TOSHIBA DIODE VCO FOR UHF BAND RADIO • • SILICON EPITAXIAL PLANAR TYPE 1 SV3 1 3 High Capacitance Ratio : C0.5V /C 2.5V = 2-5 TyP- : rs = 0.35 CI (Typ.) Low Series Resistance Useful for Small Size Tuner IV/I A V I l\ /I I IIV /I Dl \ A A“\ I TI II MM \ J« J


    OCR Scan     		PDF 1SV313

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 1DL42 TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42 SWITCHING TYPE POWER SUPPLY APPLICATIONS Vr rm = 200V Repetitive Peak Reverse Voltage Average Forward Current i F(AV) = 1-Oa Very Fast Reverse-Reeovery Time trr = 60ns (Max.)


    OCR Scan     		PDF 1DL42

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1DL42A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : V rrm = 200V Average Forward Current : Ijr (AV) = 1-0A Very Fast Reverse-Recovery Time : trr = 35ns (Max.)


    OCR Scan     		PDF 1DL42A DL42A 961001EAA2'

    A98V

    Abstract: 1DL42A
    Text: TOSHIBA 1DL42A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : Vrrm = 200V Average Forward Current : Ijr (AV)= 1-0A Very Fast Reverse-Reeovery Time : trr = 35ns (Max.)


    OCR Scan     		PDF 1DL42A 961001EAA2' A98V

    1DL41A

    Abstract: TOSHIBA DLA
    Text: TOSHIBA 1DL41A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL41A Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage V r r m = 2 0 0 V Average Forward Current IF(AV) = 1-0A (Ta = 64°C) Very Fast Reverse-Reeovery Time trr = 35ns (Max.)


    OCR Scan     		PDF 1DL41A 961001EAA2' TOSHIBA DLA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1DL41A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL41A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : V r r m = 200V Average Forward Current : Ip (AV)= 1-0A (Ta = 64°C) Very Fast Reverse-Recovery Time : trr = 35ns (Max.)


    OCR Scan     		PDF 1DL41A DL41A 961001EAA2'

    DL42A

    Abstract: No abstract text available
    Text: 1D L 42A TOSHIBA TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE 1 DL42A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS Repetitive Peak Reverse Voltage : V r r m = 200 V Average Forward Current : If (AV) = 1.0A Very Fast Reverse-Reeovery Time : trr = 35 ns (Max.)


    OCR Scan     		PDF DL42A DL42A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 5TUZ47 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE R T II 7 dl Unit in mm MOST SUITABLE FOR COLOR T.V. DAMPER. • • • Repetitive Peak ReverseVoltage : V r r ]V[ = 1500V Average Forward Current : Ijr AV = 5A Reverse-Recovery Time : ^ = 0 .6 ^ 8 •


    OCR Scan     		PDF 5TUZ47 961001EAA2'

    L44A

    Abstract: marking L4 toshiba L4 toshiba marking code toshiba
    Text: TOSHIBA U1DL44A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE U 1 D L4 4 A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS = 200V Repetitive Peak Reverse Voltage V Average Forward Current I f (AV) = 1'° a Very Fast Reverse-Recovery Time


    OCR Scan     		PDF U1DL44A 961001EAA2' L44A marking L4 toshiba L4 toshiba marking code toshiba

    1SV269

    Abstract: C25V
    Text: TOSHIBA 1SV269 TOSHIBA VARIABLE CAPACITANCE DIODE 1 S V2 6 9 CATV TUNING • • • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio : C2V/C25V = 11.5 Typ. Low Series Resistance : rs = 0.550 (Typ.) Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan     		PDF 1SV269 C2V/C25V 000707EAA2' 1SV269 C25V