Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TOSHIBA K13A50D Search Results

    TOSHIBA K13A50D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA K13A50D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k13a50da

    Abstract: No abstract text available
    Text: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK13A50DA k13a50da

    k13a50da

    Abstract: K13A50D
    Text: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK13A50DA k13a50da K13A50D

    Untitled

    Abstract: No abstract text available
    Text: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK13A50DA

    k13a50

    Abstract: K13A50DA K13A50D K13A TK13A50DA
    Text: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK13A50DA k13a50 K13A50DA K13A50D K13A TK13A50DA

    k13a50da

    Abstract: k13a50 TK13A50DA K13A50D
    Text: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK13A50DA k13a50da k13a50 TK13A50DA K13A50D

    Untitled

    Abstract: No abstract text available
    Text: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK13A50D

    K13A50D 2.0 transistor

    Abstract: K13A50D transistor K13A50D
    Text: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK13A50D K13A50D 2.0 transistor K13A50D transistor K13A50D

    K13A50D transistor

    Abstract: k13a50 K13A50D TK13A50D K*A50D
    Text: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK13A50D K13A50D transistor k13a50 K13A50D TK13A50D K*A50D

    K13A50D transistor

    Abstract: K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D
    Text: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK13A50D K13A50D transistor K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D