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    TK13A50D Price and Stock

    Toshiba America Electronic Components TK13A50D(STA4,Q,M)

    MOSFET N-CH 500V 13A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK13A50D(STA4,Q,M) Tube 114 1
    • 1 $3.6
    • 10 $3.6
    • 100 $3.6
    • 1000 $1.24975
    • 10000 $1.22375
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    Mouser Electronics TK13A50D(STA4,Q,M)
    • 1 $3.27
    • 10 $3.07
    • 100 $1.56
    • 1000 $1.22
    • 10000 $1.22
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    EBV Elektronik TK13A50D(STA4,Q,M) 19 Weeks 50
    • 1 -
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    Toshiba America Electronic Components TK13A50DA(STA4,Q,M

    MOSFET N-CH 500V 12.5A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK13A50DA(STA4,Q,M Tube 13 1
    • 1 $3.31
    • 10 $3.31
    • 100 $3.31
    • 1000 $1.13353
    • 10000 $1.0925
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    Mouser Electronics TK13A50DA(STA4,Q,M 11
    • 1 $3
    • 10 $2.78
    • 100 $1.41
    • 1000 $1.09
    • 10000 $1.09
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    Toshiba America Electronic Components TK13A50DA(STA4

    Trans MOSFET N-CH 500V 12.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK13A50DA(STA4,Q,M)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK13A50DA(STA4 Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $1.30226
    • 1000 $1.1799
    • 10000 $1.1799
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    Toshiba America Electronic Components TK13A50D(STA4QM)

    Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK13A50D(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK13A50D(STA4QM) Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $1.45871
    • 1000 $1.32165
    • 10000 $1.32165
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    Toshiba America Electronic Components TK13A50D(STA4,X,M)

    Field Effect Transistor Silicon N Channel MOS Type
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical TK13A50D(STA4,X,M) 50 45
    • 1 -
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    • 100 $0.6725
    • 1000 $0.6725
    • 10000 $0.6725
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    Chip1Stop TK13A50D(STA4,X,M) Tube 50
    • 1 $0.681
    • 10 $0.583
    • 100 $0.564
    • 1000 $0.564
    • 10000 $0.564
    		Buy Now
    Find more TK13A50D price and stock on Findchips.com

    TK13A50D Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK13A50DA Toshiba Transistors - Mosfets Original PDF
    TK13A50DA Toshiba Japanese - Transistors - Mosfets Original PDF
    TK13A50DA(STA4,Q,M Toshiba TK13A50DA - Trans MOSFET N-CH 500V 12.5A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK13A50D(STA4,Q,M) Toshiba TK13A50D - Trans MOSFET N-CH 500V 13A 3-Pin(3+Tab) TO-220SIS Original PDF

    TK13A50D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TK13A50DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ TK13A50DA ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.39 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		PDF TK13A50DA

    k13a50da

    Abstract: TK13A50DA k13a50 K13A K13A50D
    Text: TK13A50DA 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ TK13A50DA ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.39 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original     		PDF TK13A50DA SC-67 2-10U1B 20070701-JA k13a50da TK13A50DA k13a50 K13A K13A50D

    k13a50da

    Abstract: k13a50 TK13A50DA K13A50D
    Text: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK13A50DA k13a50da k13a50 TK13A50DA K13A50D

    K13A50D transistor

    Abstract: K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D
    Text: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK13A50D K13A50D transistor K13A50D TK13A50D transistor K13a50d k13a50 K*A50D toshiba K13A50D

    K13A50D transistor

    Abstract: k13a50 K13A50D TK13A50D K*A50D
    Text: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK13A50D K13A50D transistor k13a50 K13A50D TK13A50D K*A50D

    k13a50

    Abstract: K13A50DA K13A50D K13A TK13A50DA
    Text: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK13A50DA k13a50 K13A50DA K13A50D K13A TK13A50DA

    k13a50da

    Abstract: K13A50D
    Text: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK13A50DA k13a50da K13A50D

    Untitled

    Abstract: No abstract text available
    Text: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK13A50DA

    K13A50D

    Abstract: TK13A50D VDD200 k13a50 K*A50D
    Text: TK13A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK13A50D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 500 V)


    Original     		PDF TK13A50D K13A50D TK13A50D VDD200 k13a50 K*A50D

    k13a50da

    Abstract: No abstract text available
    Text: TK13A50DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK13A50DA Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.39 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.)


    Original     		PDF TK13A50DA k13a50da

    Untitled

    Abstract: No abstract text available
    Text: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK13A50D

    K13A50D 2.0 transistor

    Abstract: K13A50D transistor K13A50D
    Text: TK13A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK13A50D Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)


    Original     		PDF TK13A50D K13A50D 2.0 transistor K13A50D transistor K13A50D

    K13A50D

    Abstract: tk13a50d k13a50 k13a
    Text: TK13A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 TK13A50D ○ スイッチングレギュレータ用 Ф3.2 ± 0.2 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 7.5 S (標準) z 漏れ電流が低い。 : IDSS = 10 A (最大) (VDS = 500 V)


    Original     		PDF TK13A50D K13A50D tk13a50d k13a50 k13a

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		PDF BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG

    fast tlp785

    Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
    Text: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W


    Original     		PDF SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		PDF BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    transistor compatible 2SK3569

    Abstract: TK12A65D 2SK3569 equivalent tk6a65d equivalent TB-7005 TPCA8019-H TPCA8023-H tk10a60d equivalent TPCA8030-H p 181 Photocoupler
    Text: 2009-3 SYSTEM CATALOG Semiconductors for Power Supplies SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng AC-Input Switching Power Supply Circuits and Recommended New Product Series ● Secondary rectifier 1. Ultra-high-speed N-channel trench MOSFET U-MOSIII-H Series


    Original     		PDF TLP285/TLP781) TB6818FG/TB6819FG) SCE0024B SCE0024C transistor compatible 2SK3569 TK12A65D 2SK3569 equivalent tk6a65d equivalent TB-7005 TPCA8019-H TPCA8023-H tk10a60d equivalent TPCA8030-H p 181 Photocoupler

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		PDF BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF