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    TOSHIBA GT30 Search Results

    TOSHIBA GT30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA GT30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Preliminary GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT30J324 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS


    Original     		PDF GT30J324 50kHz Tj125 GT30J324

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Preliminary GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT30J121 High Power Switching Applications Fast Switching Applications ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS :Operating frequency up to 50kHz(Reference)


    Original     		PDF GT30J121 50kHz Tj125

    GT30J301

    Abstract: No abstract text available
    Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. : VCE (sat) = 2.7V (Max.)


    Original     		PDF GT30J301 GT30J301

    GT30J322

    Abstract: IGBT Guide
    Text: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)


    Original     		PDF GT30J322 GT30J322 IGBT Guide

    GT30

    Abstract: GT30J311
    Text: GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)


    Original     		PDF GT30J311 GT30 GT30J311

    GT30J324

    Abstract: No abstract text available
    Text: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation • Enhancement-mode • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J324 GT30J324

    GT30J121

    Abstract: GT30J324 ic604 IGBT GT30J121
    Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation • Enhancement-mode • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J121 GT30J121 GT30J324 ic604 IGBT GT30J121

    GT30J324

    Abstract: No abstract text available
    Text: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation · Enhancement-mode · Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J324 GT30J324

    GT30J322

    Abstract: No abstract text available
    Text: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25 s Typ. (IC = 50A)


    Original     		PDF GT30J322 GT30J322

    Untitled

    Abstract: No abstract text available
    Text: GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Unit: mm High speed: tf = 0.05 s (typ.)


    Original     		PDF GT30J126

    GT30J324

    Abstract: GT30J126
    Text: GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Unit: mm High speed: tf = 0.05 s (typ.)


    Original     		PDF GT30J126 GT30J324 GT30J126

    GT30J322

    Abstract: IGBT Guide TOSHIBA IGBT DATA BOOK
    Text: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 Unit: mm FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD included between emitter and collector Enhancement mode type High speed : tf = 0.25µs Typ. (IC = 50A)


    Original     		PDF GT30J322 GT30J322 IGBT Guide TOSHIBA IGBT DATA BOOK

    TOSHIBA IGBT DATA BOOK

    Abstract: GT30J322
    Text: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT30J322 Unit: mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS FRD Included Between Emitter and Collector Enhancement−Mode High Speed : tf = 0.25µs Typ. (IC = 50A)


    Original     		PDF GT30J322 TOSHIBA IGBT DATA BOOK GT30J322

    Untitled

    Abstract: No abstract text available
    Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)


    Original     		PDF GT30J301

    GT30J301

    Abstract: No abstract text available
    Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)


    Original     		PDF GT30J301 GT30J301

    GT30J101

    Abstract: GT30J301
    Text: GT30J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT30J101 000707EAA1 GT30J101 GT30J301

    Untitled

    Abstract: No abstract text available
    Text: GT30J301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT3QJ3Q1 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed ; tf=0t30/¿s Max, Low Saturation Voltage : Vq e (sat)~^.7V (Max.)


    OCR Scan     		PDF GT30J301

    GT30J322

    Abstract: No abstract text available
    Text: TOSHIBA GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT30J322 THE 4TH GENERATION Unit in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • • FRD Included Between Emitter and Collector Enhancement-Mode High Speed


    OCR Scan     		PDF GT30J322 GT30J322

    Untitled

    Abstract: No abstract text available
    Text: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)


    OCR Scan     		PDF GT30J311 30/iS

    GT30J301

    Abstract: No abstract text available
    Text: GT30J301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.30;i*s Max. Low Saturation Voltage : V qe (sat)~^.7V (Max.)


    OCR Scan     		PDF GT30J301 GT30J301

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30JB11 U nit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 1.5 The 3rd Generation Enhancement-Mode High Speed : tf= 0.30//s Max. Low Saturation Voltage : V q e (sat) = 2-7V (Max.)


    OCR Scan     		PDF GT30J311 GT30JB11 30//s TjS125Â

    TRANSISTOR 43IL

    Abstract: 43IL GT30J311
    Text: GT30J311 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T30J31 1 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 15.9MAX. 11.0 The 3rd Generation Enhancement-Mode High Speed : tf=0.30;i*s Max. Low Saturation Voltage : V qe (sat)~^.7V (Max.)


    OCR Scan     		PDF GT30J311 GT30J31 TRANSISTOR 43IL 43IL GT30J311

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT f i T 3 fl I 3 1 1 'w • mm ir m mm ■ ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed ; tf= 0 t3 0 ju $ Max,


    OCR Scan     		PDF GT30J311

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT30J322 Unit in mm THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS 15.8±0.5 . FRD Included Between Emitter and Collector Enhancement-Mode High Speed


    OCR Scan     		PDF GT30J322 25//s