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    TOSHIBA C366 Search Results

    TOSHIBA C366 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA C366 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C3665 transistor

    Abstract: c3665 2SC3665 2SC3665 equivalent 2-7D101A 2SA1425
    Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


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    2SC3665 2SA1425. C3665 transistor c3665 2SC3665 2SC3665 equivalent 2-7D101A 2SA1425 PDF

    C3665 transistor

    Abstract: C3665
    Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


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    2SC3665 2SA1425. 2-7D101A C3665 transistor C3665 PDF

    C3665 transistor

    Abstract: c3665 2SC3665 2-7D101A 2SA1425
    Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


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    2SC3665 2SA1425. C3665 transistor c3665 2SC3665 2-7D101A 2SA1425 PDF

    C3665 transistor

    Abstract: c3665 2-7D101A 2SA1425 2SC3665
    Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


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    2SC3665 2SA1425. C3665 transistor c3665 2-7D101A 2SA1425 2SC3665 PDF

    transistor c3668

    Abstract: c3668 2SA1428 transistor 2-7D101A 2SA1428 2SC3668
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


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    2SC3668 2SA1428. transistor c3668 c3668 2SA1428 transistor 2-7D101A 2SA1428 2SC3668 PDF

    c3668

    Abstract: transistor c3668
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


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    2SC3668 2SA1428. 2-7D101A c3668 transistor c3668 PDF

    transistor c3668

    Abstract: c3668 2SC3668 2-7D101A 2SA1428
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


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    2SC3668 2SA1428. transistor c3668 c3668 2SC3668 2-7D101A 2SA1428 PDF

    c3668

    Abstract: transistor c3668 2-7D101A 2SA1428 2SC3668
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


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    2SC3668 2SA1428. c3668 transistor c3668 2-7D101A 2SA1428 2SC3668 PDF

    C3669

    Abstract: 2-7D101A
    Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.)


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    2SC3669 2SA1429 2-7D101A C3669 2-7D101A PDF

    C3669

    Abstract: 2SC3669 2-7D101A 2SA1429
    Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.)


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    2SC3669 2SA1429 C3669 2SC3669 2-7D101A 2SA1429 PDF

    C3669

    Abstract: 2-7D101A 2SA1429 2SC3669
    Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.)


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    2SC3669 2SA1429 C3669 2-7D101A 2SA1429 2SC3669 PDF

    c3669

    Abstract: 2SC3669 2-7D101A 2SA1429
    Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.)


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    2SC3669 2SA1429 c3669 2SC3669 2-7D101A 2SA1429 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    2SC3666 2-7D101A PDF

    C3666

    Abstract: 2-7D101A 2SC3666
    Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    2SC3666 C3666 2-7D101A 2SC3666 PDF

    c3666

    Abstract: 2-7D101A 2SC3666
    Text: 2SC3666 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3666 Audio Power Amplifier Applications • High DC current gain: hFE (1) = 100 to 320 • High power dissipation: PC = 1000 mW Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    2SC3666 c3666 2-7D101A 2SC3666 PDF

    transistor C546

    Abstract: transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524
    Text: TI TAS5100EVM DESIGN DOCUMENT SLEU010A January 2002 Thunderbird TAS5100EVM Design Document Texas Instruments Claus Reckweg Content TAS5100EVM Schematic Version 13.00 6 pages TAS5100EVM Parts List Version 9.00 (5 pages) TAS5100EVM PCB Specification Version 2.00


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    TAS5100EVM SLEU010A transistor C546 transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524 PDF

    smd diode C544

    Abstract: 10MQ040N Motorola DAP head smd diode c640 smd diode R622 toshiba c640 npn transistors C540 philips home theater power supply board semiconductor c243 sharp smd diode C641
    Text: Application Report SLEA036 - June 2004 TAS5010-5112F2EVM Application Report Jonas Svendsen Digital Audio and Video Products The TAS5010-5112F2EVM PurePath Digital customer evaluation module demonstrates the integrated circuits TAS5010PFB and TAS5112ADFD from Texas Instruments.


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    SLEA036 TAS5010-5112F2EVM TAS5010PFB TAS5112ADFD 24-bit TAS5010-5112F2EVM MECH01 smd diode C544 10MQ040N Motorola DAP head smd diode c640 smd diode R622 toshiba c640 npn transistors C540 philips home theater power supply board semiconductor c243 sharp smd diode C641 PDF

    Motorola DAP head

    Abstract: diode C622 AKS TI toshiba c640 smd diode C544 smd diode C543 Diode c514 smd diode C641 motorola s240 motorola c381
    Text: Application Report SLEA036A - June 2004 – Revised April 2008 TAS5010-5112F2EVM Application Report Jonas Svendsen Digital Audio and Video Products The TAS5010-5112F2EVM PurePath Digital customer evaluation module demonstrates the integrated circuits TAS5010PFB and TAS5112ADFD from Texas Instruments.


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    SLEA036A TAS5010-5112F2EVM TAS5010PFB TAS5112ADFD 24-bit Motorola DAP head diode C622 AKS TI toshiba c640 smd diode C544 smd diode C543 Diode c514 smd diode C641 motorola s240 motorola c381 PDF

    dap 002

    Abstract: transistor a708 a708 transistor NPN A708 toshiba c640 DAP 07 power supply C516* npn transistor npn transistors C540 A708 smd c643
    Text: Application Report SLEA035 – June 2004 TAS5001-5122C2EVM Application Report Jonas Svendsen Digital Audio & Video Products The TAS5001-5122C2EVM PurePath Digital customer evaluation module demonstrates the integrated circuits TAS5001PFB and TAS5122DCA from Texas Instruments.


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    SLEA035 TAS5001-5122C2EVM TAS5001PFB TAS5122DCA 24-bit dap 002 transistor a708 a708 transistor NPN A708 toshiba c640 DAP 07 power supply C516* npn transistor npn transistors C540 A708 smd c643 PDF

    DAP 002 power supply

    Abstract: dap 002 transistor a708 toshiba c640 a708 transistor NPN A708 npn transistors C540 A708 diode c341 DAP 07 power supply
    Text: Application Report SLEA035A – June 2004 – Revised April 2008 TAS5001-5122C2EVM Application Report Jonas Svendsen Digital Audio and Video Products The TAS5001-5122C2EVM PurePath Digital customer evaluation module demonstrates the integrated circuits TAS5001PFB and TAS5122DCA from Texas Instruments.


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    SLEA035A TAS5001-5122C2EVM TAS5001PFB TAS5122DCA 24-bit DAP 002 power supply dap 002 transistor a708 toshiba c640 a708 transistor NPN A708 npn transistors C540 A708 diode c341 DAP 07 power supply PDF

    TC74HC365

    Abstract: TC74HC365A TC74HC365AF TC74HC365AP TC74HC366AF TC74HC366AP 74LS365 equivalent
    Text: TOSHIBA TC74HC365,366AP/AF TO SH IBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74HC365AP, TC74HC365AF TC74HC366AP, TC74HC366AF HEX BUS BUFFER TC74HC365AP / AF NON - INVERTED 3-STATE TC74H C366A P/A F INVERTED (3-STATE)_


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    TC74HC365 366AP/AF TC74HC365AP, TC74HC365AF TC74HC366AP, TC74HC366AF TC74HC365AP TC74HC366AP/ TC74HC365A TC74HC366A TC74HC366AF TC74HC366AP 74LS365 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA =10=17240 O D S M T M b 264 • T 0 S 2 TOSHIBA L 0 6 I C / M E M 0 R Y tR E SILICON GATE CMOS 262,144 WORDS x 16 BITS MULTIPORT DRAM TC524262 TC524265 D t a r g e t DESCRIPTION The TC524262/265 is a 4M bit CMOS multiport memory equipped with a 262,144-words by 16-bits


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    TC524262 TC524265 TC524262/265 144-words 16-bits 512-words 16-bits TC524262 PDF

    toshiba C366

    Abstract: toshiba C380
    Text: TOSHIBA TC524262 TC524265 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524262/265 is a 4M bit CMOS multiport memory equipped with a 262,144-words by 16-bits dynamic random access memory RAM port and a 512-words by 16-bits static serial access memory (SAM)


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    TC524262 TC524265 TC524262/265 144-words 16-bits 512-words toshiba C366 toshiba C380 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC524262 TC524265 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524262/265 is a 4M bit CM OS m ultiport m emory equipped with a 262,144-words by 16-bits dynam ic random access m emory RAM port and a 512-words by 16-bits static serial access m emory (SAM)


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    TC524262 TC524265 TC524262/265 144-words 16-bits 512-words 16-bits TC524262 PDF