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    TOSHIBA 2SK369 Search Results

    TOSHIBA 2SK369 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA 2SK369 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sk369

    Abstract: No abstract text available
    Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)


    Original     		PDF 2SK369 SC-43 2sk369

    2SK369

    Abstract: TOSHIBA 2SK369
    Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)


    Original     		PDF 2SK369 2SK369 TOSHIBA 2SK369

    2SK369

    Abstract: No abstract text available
    Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. · High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)


    Original     		PDF 2SK369 2SK369

    2SK36

    Abstract: No abstract text available
    Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)


    Original     		PDF 2SK369 2SK36

    TOSHIBA 2SK369

    Abstract: 2SK369 2SK3693
    Text: 2SK369 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK369 For Low Noise Audio Amplifier Applications • Unit: mm Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 40 mS typ. (VDS = 10 V, VGS = 0, IDSS = 5 mA)


    Original     		PDF 2SK369 TOSHIBA 2SK369 2SK369 2SK3693

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    Tektronix Type 1A7A

    Abstract: 74C221 LSK389 HP-419A Frequency Generator 0.1Hz 10MHz TOSHIBA 2SK369 jfet discrete differential transistor jim Williams linear jim williams PR300
    Text: Application Note 124 July 2009 775 Nanovolt Noise Measurement for A Low Noise Voltage Reference Quantifying Silence Jim Williams Introduction Frequently, voltage reference stability and noise define measurement limits in instrumentation systems. In particular, reference noise often sets stable resolution limits.


    Original     		PDF 100Hz an124f AN124-11 500nV/DIV AN124 AN124-12 Tektronix Type 1A7A 74C221 LSK389 HP-419A Frequency Generator 0.1Hz 10MHz TOSHIBA 2SK369 jfet discrete differential transistor jim Williams linear jim williams PR300

    transistor 2sk369

    Abstract: No abstract text available
    Text: TOSHIBA 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K3 69 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : IYfs| = 40mS Typ. n r « n _ i m r


    OCR Scan     		PDF 2SK369 --40V 10Oil transistor 2sk369

    TOSHIBA 2SK369

    Abstract: K369 2SK369 "TOSHIBA" "2SK369" fa1210
    Text: TO SH IBA 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS • • • • • Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High ¡Yfsi : iYfsi = 40mS Typ.


    OCR Scan     		PDF 2SK369 12truments, TOSHIBA 2SK369 K369 2SK369 "TOSHIBA" "2SK369" fa1210

    K369

    Abstract: TOSHIBA 2SK369 2SK369 field effect transistor
    Text: T O S H IB A 2SK369 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS • • Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : IYfsl = 40mS Typ.


    OCR Scan     		PDF 2SK369 K369 TOSHIBA 2SK369 2SK369 field effect transistor

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS . 5.1 MAX. Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : IYfsl = 40mS Typ. (VDS = 10V, V g s = 0, lDSS = 5mA)


    OCR Scan     		PDF 2SK369

    2SK369

    Abstract: No abstract text available
    Text: T O S H IB A 2SK369 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK369 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs| = 40mS Typ. (VDS = 1OV, V g s = 0, IDSS = 5mA)


    OCR Scan     		PDF 2SK369 SC-43

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr