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    TOSHIBA 2SJ313 Search Results

    TOSHIBA 2SJ313 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    TOSHIBA 2SJ313 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SK2013

    Abstract: 2SJ313 2SK2013
    Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.) Complementary to 2SJ313


    OCR Scan     		2SK2013 2SJ313 SK2013 2SK2013 PDF

    2SJ313

    Abstract: MARKING SG toshiba 2SK2013 transistor marking 4D
    Text: TOSHIBA 2SJ313 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS——180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013


    OCR Scan     		2SJ313 2SK2013 2SJ313 MARKING SG toshiba transistor marking 4D PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ313 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : V D g g = —180V • High Forward Transfer Admittance : |Yfs | = 0.7S Typ. • Complementary to 2SK2013


    OCR Scan     		2SJ313 2SK2013 --180V PDF

    EH 14 A

    Abstract: 2SJ313 2SK2013
    Text: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013


    OCR Scan     		2SJ313 2SK2013 EH 14 A PDF

    2SK2056

    Abstract: 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402
    Text: TOSHIBA TOSHIBA POWER MOSFETs 1Q, 1999 Alphanumerically Toshiba Power MOSFET List Alphanumerically Part VDSS RDS ON Number (V) (Ω) ID (A) Package Generation Status 2SJ147 -60 0.2 -12 TO-220IS π -MOSII Non-Promotion 2SJ183 -60 0.35 -5 POWER MOLD L - π -MOSIII


    Original     		2SJ147 O-220IS 2SJ183 2SJ200 2SJ201 2SJ224 O-220FL/SM 2SJ238 2SJ239 2SJ240 2SK2056 2SK1603 2SK1723 2sk1377 transistor 2SK1603 2SK2146 2SK2351 MOSFET 2sk1357 transistor 2sk1213 2SK2402 PDF

    2sk2013 2SJ313

    Abstract: 2SJ313 2SK2013
    Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.) Complementary to 2SJ313


    OCR Scan     		2SK2013 2SJ313 2sk2013 2SJ313 PDF

    2SJ313

    Abstract: 2SK2013 SC-65
    Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ.) Complementary to 2SJ313


    OCR Scan     		2SK2013 2SJ313 2SK2013 SC-65 PDF

    transistor C1000 Toshiba

    Abstract: 2SJ313 2SK2013 SV125
    Text: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS = —180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. Complementary to 2SK2013


    OCR Scan     		2SJ313 2SK2013 transistor C1000 Toshiba 2SJ313 2SK2013 SV125 PDF

    2sk2013

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2013 2 S K2 0 1 3 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj}gg= 180V High Forward Transfer Admittance : |Yfg| = 0.7S Typ. Complementary to 2SJ313


    OCR Scan     		2SK2013 2SJ313 2sk2013 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : VQgg = 180V • High Forward Transfer Admittance : |Yfs | = 0.7S Typ. • Complementary to 2SJ313 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		2SK2013 2SJ313 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ313 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ313 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • 10 ì 0.3 High Breakdown Voltage : V D g g = —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013


    OCR Scan     		2SJ313 2SK2013 PDF

    2sk2013 2SJ313

    Abstract: transistor marking 9D
    Text: TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR 1 SILICON P CHANNEL MOS TYPE <; I mm 3 mm m 1 3 m mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • High Breakdown Voltage : V d SS—_ 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013


    OCR Scan     		2SJ313 2SK2013 100ms* 2sk2013 2SJ313 transistor marking 9D PDF

    2SK2013

    Abstract: Audio Power Amplifier TOSHIBA Toshiba Audio power amplifier toshiba 2sj313 2SJ313 Toshiba 2SJ
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)


    Original     		2SK2013 2SJ313 SC-67 2-10R1B 2SK2013 Audio Power Amplifier TOSHIBA Toshiba Audio power amplifier toshiba 2sj313 2SJ313 Toshiba 2SJ PDF

    k2013

    Abstract: toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)


    Original     		2SK2013 2SJ313 SC-67 2-10R1B K2013 k2013 toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ PDF

    2SJ313

    Abstract: J313 2SK2013 Toshiba 2SJ
    Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Ta = 25°C)


    Original     		2SJ313 2SK2013 SC-67 2-10R1B 2SJ313 J313 2SK2013 Toshiba 2SJ PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Ta = 25°C)


    Original     		2SJ313 2SK2013 SC-67 2-10R1B PDF

    2sk2013 2SJ313

    Abstract: No abstract text available
    Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Tc = 25°C)


    Original     		2SJ313 2SK2013 SC-67 2-10R1B 2sk2013 2SJ313 PDF

    2sk2013 2SJ313

    Abstract: 2SJ313 2SK2013 K2013 toshiba pb includes
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 0.7 S typ. z Complementary to 2SJ313 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SK2013 2SJ313 2sk2013 2SJ313 2SJ313 2SK2013 K2013 toshiba pb includes PDF

    2sk2013 2SJ313

    Abstract: Toshiba 2SJ
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 0.7 S typ. z Complementary to 2SJ313 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SK2013 2SJ313 2sk2013 2SJ313 Toshiba 2SJ PDF

    2SK2013

    Abstract: K2013 2SJ313 2sk2013 2SJ313 Toshiba 2SJ
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 0.7 S typ. z Complementary to 2SJ313 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SK2013 2SJ313 2SK2013 K2013 2SJ313 2sk2013 2SJ313 Toshiba 2SJ PDF

    2SJ313

    Abstract: 2SK2013 Toshiba 2SJ
    Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = −180 V l High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm l Complementary to 2SK2013 Maximum Ratings (Ta = 25°C)


    Original     		2SJ313 2SK2013 SC-67 2-10R1B 2SJ313 2SK2013 Toshiba 2SJ PDF

    2SJ313

    Abstract: 2SK2013 2sk2013 2SJ313
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = 180V l High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm l Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)


    Original     		2SK2013 2SJ313 SC-67 2-10R1B 2SJ313 2SK2013 2sk2013 2SJ313 PDF

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Text: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


    Original     		BCE0017E S-167 BCE0017F 2SK3566 equivalent 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent PDF

    Audio Power Amplifier TOSHIBA

    Abstract: 2SJ313 2SK2013 J313
    Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S typ. z Complementary to 2SK2013 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2SJ313 2SK2013 SC-67 2-10R1B Audio Power Amplifier TOSHIBA 2SJ313 2SK2013 J313 PDF