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    2SK2013 Search Results

    2SK2013 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2013 Toshiba N-Channel MOSFET Original PDF
    2SK2013 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK2013 Toshiba Original PDF
    2SK2013 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK2013 Toshiba Silicon N channel field effect transistor for audio frequency power amplifier applications Scan PDF
    2SK2013O Toshiba Silicon N-Channel MOS Type Scan PDF
    2SK2013Y Toshiba Silicon N-Channel MOS Type Scan PDF

    2SK2013 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Toshiba 2SJ

    Abstract: No abstract text available
    Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S typ. z Complementary to 2SK2013 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ313 2SK2013 SC-67 2-10R1B Toshiba 2SJ

    k2013

    Abstract: toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK2013 2SJ313 SC-67 2-10R1B K2013 k2013 toshiba audio power amplifier 2-10r1b Audio Power Amplifier TOSHIBA toshiba marking code transistor 2SJ313 2SK2013 Toshiba 2SJ

    2sk2013 2SJ313

    Abstract: No abstract text available
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = 180V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SJ313 Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SK2013 2SJ313 SC-67 2-10R1B 2sk2013 2SJ313

    2SJ313

    Abstract: 2SK2013 2sk2013 2SJ313
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = 180V l High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm l Complementary to 2SJ313 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK2013 2SJ313 SC-67 2-10R1B 2SJ313 2SK2013 2sk2013 2SJ313

    Untitled

    Abstract: No abstract text available
    Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ313 2SK2013 SC-67 2-10R1B

    K2013

    Abstract: JEITA SC-67 2-10R1B 2SJ313 2SK2013 2sk2013 2SJ313 SC 0816
    Text: 2SK2013 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK2013 ○ 低周波電力増幅用 単位: mm : VDSS = 180V z 高耐圧です。 z 高順方向伝達アドミタンスです。 : |Yfs| = 0.7S 標準 z 2SJ313 とコンプリメンタリになります。


    Original     		PDF 2SK2013 2SJ313 SC-67 2-10R1B K2013 2002/95/EC) K2013 JEITA SC-67 2-10R1B 2SJ313 2SK2013 2sk2013 2SJ313 SC 0816

    2sk2013 2SJ313

    Abstract: Toshiba 2SJ
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 0.7 S typ. z Complementary to 2SJ313 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK2013 2SJ313 2sk2013 2SJ313 Toshiba 2SJ

    2SK2013

    Abstract: K2013 2SJ313 2sk2013 2SJ313 Toshiba 2SJ
    Text: 2SK2013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage : VDSS = 180V z High forward transfer admittance : |Yfs| = 0.7 S typ. z Complementary to 2SJ313 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK2013 2SJ313 2SK2013 K2013 2SJ313 2sk2013 2SJ313 Toshiba 2SJ

    2sk2013 2SJ313

    Abstract: No abstract text available
    Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Tc = 25°C)


    Original     		PDF 2SJ313 2SK2013 SC-67 2-10R1B 2sk2013 2SJ313

    2SJ313

    Abstract: 2SK2013 Toshiba 2SJ
    Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application l High breakdown voltage : VDSS = −180 V l High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm l Complementary to 2SK2013 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ313 2SK2013 SC-67 2-10R1B 2SJ313 2SK2013 Toshiba 2SJ

    toshiba marking code transistor

    Abstract: 2sk2013 2SJ313 2SJ313 J313 2SK2013 Toshiba 2SJ
    Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application Unit: mm z High breakdown voltage: VDSS = −180 V z High forward transfer admittance: |Yfs| = 0.7 S typ. z Complementary to 2SK2013 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ313 2SK2013 SC-67 2-10R1B toshiba marking code transistor 2sk2013 2SJ313 2SJ313 J313 2SK2013 Toshiba 2SJ

    2SJ313

    Abstract: J313 2SK2013 Toshiba 2SJ
    Text: 2SJ313 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ313 Audio Frequency Power Amplifier Application High breakdown voltage : VDSS = −180 V High forward transfer admittance : |Yfs| = 0.7 S typ. Unit: mm Complementary to 2SK2013 Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SJ313 2SK2013 SC-67 2-10R1B 2SJ313 J313 2SK2013 Toshiba 2SJ

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K2 0 1 3 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION Unit in mm 3.2 ± 0 .2 10 ± 0 .3 • High Breakdown Voltage : V j g g = 180V • High Forward Transfer Admittance : |Yfs | = 0 .7 S Typ.)


    OCR Scan     		PDF 2SK2013 2SJ313

    2sk2013 2SJ313

    Abstract: 2SJ313 2SK2013
    Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ.) Complementary to 2SJ313


    OCR Scan     		PDF 2SK2013 2SJ313 2sk2013 2SJ313

    2SJ313

    Abstract: 2SK2013 SC-65
    Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj gg = 180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ.) Complementary to 2SJ313


    OCR Scan     		PDF 2SK2013 2SJ313 2SK2013 SC-65

    transistor C1000 Toshiba

    Abstract: 2SJ313 2SK2013 SV125
    Text: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS = —180 V High Forward Transfer Admittance : |Yfs| = 0.7 S Typ. Complementary to 2SK2013


    OCR Scan     		PDF 2SJ313 2SK2013 transistor C1000 Toshiba 2SJ313 2SK2013 SV125

    2SJ313

    Abstract: MARKING SG toshiba 2SK2013 transistor marking 4D
    Text: TOSHIBA 2SJ313 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vd SS——180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013


    OCR Scan     		PDF 2SJ313 2SK2013 2SJ313 MARKING SG toshiba transistor marking 4D

    2sk2013 2SJ313

    Abstract: transistor marking 9D
    Text: TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR 1 SILICON P CHANNEL MOS TYPE <; I mm 3 mm m 1 3 m mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • High Breakdown Voltage : V d SS—_ 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013


    OCR Scan     		PDF 2SJ313 2SK2013 100ms* 2sk2013 2SJ313 transistor marking 9D

    2sk2013

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2013 2 S K2 0 1 3 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : Vj}gg= 180V High Forward Transfer Admittance : |Yfg| = 0.7S Typ. Complementary to 2SJ313


    OCR Scan     		PDF 2SK2013 2SJ313 2sk2013

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ313 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : V D g g = —180V • High Forward Transfer Admittance : |Yfs | = 0.7S Typ. • Complementary to 2SK2013


    OCR Scan     		PDF 2SJ313 2SK2013 --180V

    EH 14 A

    Abstract: 2SJ313 2SK2013
    Text: 2SJ313 TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • High Breakdown Voltage : VDgg= —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013


    OCR Scan     		PDF 2SJ313 2SK2013 EH 14 A

    2SJ313

    Abstract: 2SK2013
    Text: T O S H IB A 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 SK2 0 1 3 U n it in mm A U D IO FREQUENCY POWER AMPLIFIER APPLICATION o M A X IM U M RATINGS Ta = 25°C SYM BOL CHARACTERISTIC Drain-Source V oltage V D SS Gate-Souree V oltage


    OCR Scan     		PDF 2SK2013 2SJ313 2SK2013

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2013 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2013 AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • High Breakdown Voltage : VQgg = 180V • High Forward Transfer Admittance : |Yfs | = 0.7S Typ. • Complementary to 2SJ313 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SK2013 2SJ313

    Untitled

    Abstract: No abstract text available
    Text: 2SJ313 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ313 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION • • • 10 ì 0.3 High Breakdown Voltage : V D g g = —180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013


    OCR Scan     		PDF 2SJ313 2SK2013