K9WBG08U1M
Abstract: Toggle DDR NAND flash K9WBG08U1M-PIB0 Samsung "NAND Flash" "ordering information" K9WBG08U1M-PCK0 k9wbg08u1 K9WBG08U1M-PIB0T NAND flash k9wbg08 Samsung EOL
Text: home > Products > Flash > NAND Flash> Products > K9WBG08U1M Flash Product Search NAND Flash NAND Flash > SLC -large block > K9WBG08U1M Part Number Search Products package & packing EOL Products Toggle DDR NAND Flash Flash SSD NOR Flash Flash Cards production & availability
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K9WBG08U1M
K9WBG08U1M
IIK00
-IIB00
Toggle DDR NAND flash
K9WBG08U1M-PIB0
Samsung "NAND Flash" "ordering information"
K9WBG08U1M-PCK0
k9wbg08u1
K9WBG08U1M-PIB0T
NAND flash
k9wbg08
Samsung EOL
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K9F2G08U0B-PCB0
Abstract: samsung K9 flash Toggle DDR NAND flash K9F2G08U0B-PIB0 K9F2G08U0B samsung 128G nand flash movinand DECODER Samsung EOL K9F2G08U0B-PIB00 samsung toggle mode NAND
Text: SAMSUNG's Digital World go contents Flash ● ● ● ● ● NAND Flash ❍ Products ❍ EOL Products Toggle DDR NAND Flash ❍ Products Flash SSD NOR Flash ❍ Products ❍ EOL Products Flash Cards ❍ Products ❍ EOL Products Product Search ● ● ●
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K9F2G08U0B
07-Sep-2010
K9F2G08U0B-PCB0
samsung K9 flash
Toggle DDR NAND flash
K9F2G08U0B-PIB0
samsung 128G nand flash
movinand DECODER
Samsung EOL
K9F2G08U0B-PIB00
samsung toggle mode NAND
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Untitled
Abstract: No abstract text available
Text: 0.13µm CMOS Standard Cell - SC13 - Preliminary Feature Sheet AMI Semiconductor 0.13µm CMOS Standard Cell - SC13 Key Features • Minimum drawn length: 0.13µm • Excellent performance: - 5GHz maximum flip-flop toggle rate - 33ps delay FO=2 for a 2-input NAND gate
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32-bit
M-20533-001
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MCP NOR FLASH SDRAM elpida
Abstract: "content addressable memory" precharge Ramp b001 EHB0010A1MA Spansion ddr ELPIDA DDR User s99pl
Text: DATA SHEET 64Mb Flash Memory + 512Mb DDR SDRAM MCP EHB0010A1MA Description DDR SDRAM Specifications The EHB0010A1MA is a MCP Multi Chip Package ; TM 64M bits flash memory organized the Spansion (S99PL064J0039) and the Elpida 512M bits DDR SDRAM in one package.
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512Mb
EHB0010A1MA
EHB0010A1MA
S99PL064J0039)
151-ball
266Mbps
M01E0107
E0950E30
MCP NOR FLASH SDRAM elpida
"content addressable memory" precharge Ramp
b001
Spansion ddr
ELPIDA DDR User
s99pl
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Spansion ddr
Abstract: MCP NOR FLASH SDRAM elpida s99pl EHB0020A1MA ELPIDA DDR User
Text: PRELIMINARY DATA SHEET 32Mb Flash Memory + 512Mb DDR SDRAM MCP EHB0020A1MA Description DDR SDRAM Specifications The EHB0020A1MA is a MCP Multi Chip Package ; TM 32M bits flash memory organized the Spansion (S99PL032J0029) and the Elpida 512M bits DDR SDRAM in one package.
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512Mb
EHB0020A1MA
EHB0020A1MA
S99PL032J0029)
151-ball
266Mbps
M01E0107
E1017E20
Spansion ddr
MCP NOR FLASH SDRAM elpida
s99pl
ELPIDA DDR User
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TN-47-14
Abstract: No abstract text available
Text: TN-47-14: DDR2 tCKE Power-Down Introduction Technical Note DDR2 tCKE Power-Down Requirement Introduction In DDR2 SDRAM devices, power-down occurs when CKE is registered LOW with a DESELECT or NOP command. However, unlike DDR SDRAM, power-down entry and exit in
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TN-47-14:
pow0006,
09005aef8166fff9/Source:
09005aef8166ffd1
TN4714
TN-47-14
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DDR2 DIMM VHDL
Abstract: No abstract text available
Text: DDR & DDR2 SDRAM Controller Compiler Errata Sheet November 2005, Compiler Version 3.3.0 This document addresses known errata and documentation changes for the DDR and DDR2 SDRAM Controller Compiler version 3.3.0. Errata are design functional defects or errors. Errata may cause the DDR
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fm transmitter project report
Abstract: fm transmitter project
Text: PowerPlay Early Power Estimator User Guide For Stratix, Stratix GX & Cyclone FPGAs 101 Innovation Drive San Jose, CA 95134 408 544-7000 www.altera.com UG-FPGAPWRCAL-2.0 Document Version: Document Date: 2.0 October 2005 Copyright 2005 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and
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EP2C35F672C6
Abstract: EP2C35F672 "Toggle Switch" EP2C70F672C6 TI-XIO1100 Laptop power supply altera jtag ethernet EP2C35 EPCS64 XIO1100
Text: Knott Systems - Cyclone II Page 1 of 2 CYCLONE II PCI EXPRESS DEVELOPMENT KIT General Description The Cyclone II EP2C35 PCI Express Development Board provides a hardware platform for developing and prototyping PCI Express, double data rate 2 DDR2 SDRAM, and the 10/100/1000 Ethernet
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EP2C35
EP2C35F672
RJ-45
RS-232
EP2C35F672C6
"Toggle Switch"
EP2C70F672C6
TI-XIO1100
Laptop power supply
altera jtag ethernet
EPCS64
XIO1100
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Untitled
Abstract: No abstract text available
Text: NT1GT72B89D2BD / NT2GT72B8PD2BD NT1GT72B89D2BE / NT2GT72B8PD2BE 1GB: 128Mx72 / 2GB: 256Mx72 Draft 240pin DDR2 SDRAM Fully Buffered DIMM Based on 128Mx8 DDR2 SDRAM Features • 1GB 128Mx72 and 2GB 256Mx72 DDR2 Fully Buffered DIMM based on 128Mx8 DDR2 SDRAM NT5TU256M4BJ-37A/3B .
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NT1GT72B89D2BD
NT2GT72B8PD2BD
NT1GT72B89D2BE
NT2GT72B8PD2BE
128Mx72
256Mx72
240pin
128Mx8
256Mx72
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FPT-48P-M19
Abstract: MBM29PL65LM-90 Diode SA91
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20903-1E FLASH MEMORY CMOS 64 M 4M x 16 BIT MirrorFlashTM MBM29PL65LM-90/10 • DESCRIPTION MBM29PL65LM is of 67,108,864 bit capacity +3.0 V -only Flash memory enabling word write, both across- the chip, comprehensive erase and by-the-unit, individual sector erase.
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DS05-20903-1E
MBM29PL65LM-90/10
MBM29PL65LM
48-pin
MBM29PL65for
F0312
FPT-48P-M19
MBM29PL65LM-90
Diode SA91
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Untitled
Abstract: No abstract text available
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0312
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DSP48
Abstract: DSP48A DSP48E DSP48E1 PPC405 PPC440 UG112 iodelay UG440 LX240T
Text: XPower Estimator User Guide [Guide Subtitle] [optional] UG440 v4.0 May 3, 2010 [optional] Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the
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UG440
DSP48
DSP48A
DSP48E
DSP48E1
PPC405
PPC440
UG112
iodelay
UG440
LX240T
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JESD51-9
Abstract: No abstract text available
Text: PowerPlay Early Power Estimator User Guide for Cyclone III FPGAs 101 Innovation Drive San Jose, CA 95134 www.altera.com UG-01013-2.0 Software Version: Document Version: Document Date: QII v9.0 SP2 2.0 June 2009 Copyright 2009 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other
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UG-01013-2
JESD51-9
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Untitled
Abstract: No abstract text available
Text: FU JITSU SEM ICO N D U C TO R DATASHEET • • • • DS05-20826-1E Polling and Toggle B i t - i J e t e c t i o n of program or erase cycle completion Ready-Busy output R Y/P^r, Hardware method for d é tà ç t< ^ & ^ ô g ra m or erase cycle completion
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DS05-20826-1E
MBM29LV400T/MBM29LV400B
F9609
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Untitled
Abstract: No abstract text available
Text: ca WF8M32-XG4DX5 WHITE M IC R O E L E C T R O N IC S 8Mx32 5V FLASH MODULE ADVANCED * FEATURES • A ccess Tim e o f 1 0 0 ,1 2 0 ,150ns ■ Packaging: • 68 Lead, 40 mm 1.560" square h e rm etic CQFP, 5.2 mm ■ Data P olling and Toggle B it fe a tu re fo r d e te ctio n o f program
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WF8M32-XG4DX5
8Mx32
150ns
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TL 2223 pc
Abstract: No abstract text available
Text: AT28C256 Features • • • • • • • • • • • Fast Read A ccess Tim e - 1 5 0 ns A utom atic Page W rite Operation Internal A ddress and Data Latches fo r 64-B ytes Internal C ontrol Tim er Fast W rite C ycle Tim es Page W rite C ycle Tim e: 3 ms o r 10 m s M axim um
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AT28C256
FM/883,
LM/883,
UM/883
TL 2223 pc
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Untitled
Abstract: No abstract text available
Text: AT28C010 Mil Features • • • • • • • • • • Fast Read A ccess Tim e - 1 2 0 ns A utom atic Page W rite O peration Internal A ddress and Data Latches for 128-B ytes Internal Control Tim er Fast W rite C ycle Tim e P age W rite C ycle Tim e - 1 0 m s M axim um
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AT28C010
128-B
AT28C010E
EM/883,
LM/883,
AT28C010
M/883,
FM/883,
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A/M29F040B(45/55/70/GR-468
Abstract: No abstract text available
Text: M29F040B 4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory PR E LIM IN A R Y DATA • SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 45ns ■ PROGRAMMING TIME - 8 jas per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS
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M29F040B
512Kb
PDIP32
PDIP32
A/M29F040B(45/55/70/GR-468
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Untitled
Abstract: No abstract text available
Text: 5 7 . SGS-THOMSON M29F105B 1 Mbit x16, Block Erase Single Supply Flash Memory PRELIM IN ARY DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME: 10^is typical PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Word-by-Word
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M29F105B
0020h
0087h
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29F010B
Abstract: M29F010B-55
Text: M29F010B 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory PRELIMINARY DATA 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 35ns FAST PROGRAMMING TIME: 8^s typical PROGRAM/ERASE CONTROLLER (P/E.C.) - Program Byte-by-Byte
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M29F010B
128Kb
16Kbytes
PDIP32
TSOP32
29F010B
M29F010B-55
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AT29C512-90
Abstract: No abstract text available
Text: AT29C512 Features • • • • • • • • • • • • Fast Read A ccess Tim e - 70 ns 5-V olt-O nly R eprogram m ing Sector P rogram O peration Single C ycle R eprogram E rase and Program 512 Sectors (128 bytes/sector) Internal A ddress and Data Latches tor 128-B ytes
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AT29C512
128-B
5-volt9C512-12PC
AT29C512-12TC
AT29C512-12JI
AT29C512-12PI
AT29C512-12TI
AT29C512-15JC
AT29C512-15PC
AT29C512-15TC
AT29C512-90
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Untitled
Abstract: No abstract text available
Text: AT28HC256 Features • • • • • • • • • • • Fast Read A ccess Tim e - 70 ns A utom atic Page W rite O peration Internal A ddress and Data Latches for 64-B ytes Internal C ontrol Tim er Fast W rite C ycle Tim es Page W rite C ycle Tim e: 3 ms or 10 ms M axim um
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AT28HC256
8M/883
DM/883,
FM/883,
UM/883
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1N914
Abstract: M29F002T PDIP32 PLCC32
Text: w , SGS-THOMSON k7 #» RitlDÊlMIlilLIKËinSMQtÊS M 29F002T 2 Mb 256K x8, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns FAST PROGRAMMING TIME: 10|us typical
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M29F002T
PDIP32
PLCC32-
PLCC32
1N914
M29F002T
PDIP32
PLCC32
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