to92 darlington
Abstract: nte232
Text: NTE232 Silicon PNP Transistor Darlington Amplifier, Preamp Description: The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type package designed for preamplifier input applications where high impedance is a requirement.
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NTE232
NTE232
100mA,
50MHz
100MHz
to92 darlington
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NTE2341
Abstract: npn darlington TO92 NTE2342
Text: NTE2341 NPN & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.
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NTE2341
NTE2342
NTE2341
500mA,
100MHz
npn darlington TO92
NTE2342
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NTE293
Abstract: pnp to92
Text: NTE293 NPN & NTE294 (PNP) Silicon Complementary Transistors Audio Amplifier and Driver Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications.
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NTE293
NTE294
500mA,
200MHz
NTE293MP
NTE293
pnp to92
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NTE6402
Abstract: "Programmable Unijunction Transistor" unijunction programmable unijunction transistor
Text: NTE6402 Programmable Unijunction Transistor PUT Description: The NTE6402 is a 3–terminal silicon planer passivated PNP device available in the standard plastic low cost TO98 and TO92 type packages. The terminals are designated as anode, anode gate, and
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NTE6402
NTE6402
"Programmable Unijunction Transistor"
unijunction
programmable unijunction transistor
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3155 power transistor
Abstract: ZTX214C equivalent ZTX214C DSA003764
Text: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 MARCH 94 FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO
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ZTX214C
-10mA,
-100mA,
200Hz,
100MHz
15KHz
3155 power transistor
ZTX214C equivalent
ZTX214C
DSA003764
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NTE12
Abstract: NTE11
Text: NTE11 NPN & NTE12 (PNP) Silicon Complementary Transistors High Current Amplifier Description: The NTE11 (NPN) and NTE12 (PNP) are silicon complementary transistors in a TO92 type case designed for use in low–frequency output amplifier, DC converter, and strobe applications.
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NTE11
NTE12
200MHz
NTE12
NTE11
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IC 386
Abstract: MPSA94
Text: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR MPSA94 ISSUE 2 MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -400 V Collector-Emitter Voltage
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MPSA94
-400V,
-400V
-10mA,
-50mA,
-100mA,
IC 386
MPSA94
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BF 235
Abstract: plc em 235 ZTX1147 ZTX1147A DSA003763
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1147A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -12V * 4 Amp Continuous Current * 20 Amp pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZTX1147A
BF 235
plc em 235
ZTX1147
ZTX1147A
DSA003763
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150e-3
Abstract: bf 494 transistor ZTX1149A
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1149A ISSUE 1 - January 1997 FEATURES * VCEO = - 25V * 3 Amp Continuous Current * 10 Amp Pulse Current * Low Saturation Voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZTX1149A
150e-3
bf 494 transistor
ZTX1149A
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX750 ZTX751 ISSUE 3 – JULY 2005 FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL ZTX750 ZTX751
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ZTX750
ZTX751
100ms
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Untitled
Abstract: No abstract text available
Text: Not Recommended for New Design Please Use ZTX758 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR MPSA94 ISSUE 2 MARCH 94 FEATURES * High voltage APPLICATIONS * Telephone dialler circuit E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage
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ZTX758
MPSA94
-400V,
-400V
-10mA,
-50mA,
-100mA,
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ic 494
Abstract: ZTX1151A
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1151A ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low Saturation voltage * High Gain C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZTX1151A
ic 494
ZTX1151A
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Untitled
Abstract: No abstract text available
Text: DISCONTINUED PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FXTA92 ISSUE 1 MARCH 94 FEATURES * 300 Volt VCEO APPLICATIONS * Telephone dialler circuits B C REFER TO MPSA92 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT
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FXTA92
MPSA92
-200V,
-20mA,
-10mA,
-30mA,
20MHz
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Untitled
Abstract: No abstract text available
Text: DISCONTINUED PLEASE USE ZXT553 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT553 ISSUE 1 FEB 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX553 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZXT553
FXT553
ZTX553
-100V,
-150mA,
-15mA*
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NTE2370
Abstract: No abstract text available
Text: NTE2369 NPN & NTE2370 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit
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NTE2369
NTE2370
200mV,
NTE2370
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX549 ZTX549A ISSUE 1 MARCH 94 FEATURES * 30 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage VCBO
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ZTX549
ZTX549A
100ms
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX758 ISSUE 1 APRIL 94 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT V Collector-Base Voltage
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ZTX758
100ms
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ztx753
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX752 ZTX753 ISSUE 2 JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX752 ZTX753 UNIT
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ZTX752
ZTX753
100ms
ztx753
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Untitled
Abstract: No abstract text available
Text: ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX552 ZTX553 UNIT Collector-Base Voltage
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ZTX552
ZTX553
100ms
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BC369
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BC369 ISSUE 1 SEPT 93 FEATURES * 20 Volt VCEO * 1 Amp continuous current * Ptot= 800 mW E C B TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -25 V Collector-Emitter Voltage
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BC369
-10mA,
-100mA*
-500mA,
100MHz
BC369
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FXT755
Abstract: ZTX755 DSA003758
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT755 ISSUE 1 FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX755 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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FXT755
ZTX755
-125V,
-500mA,
-50mA*
-200mA*
-10mA,
FXT755
DSA003758
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NTE2355
Abstract: NPN Transistor TO92 40V 200mA NTE2356
Text: NTE2355 NPN & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors Features: D Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit
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NTE2355
NTE2356
200mV,
NTE2355
NPN Transistor TO92 40V 200mA
NTE2356
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NTE2368
Abstract: No abstract text available
Text: NTE2367 NPN & NTE2368 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 4.7k Bias Resistors Features: D Built–In Bias Resistor (R1 = 4.7kΩ, R2 = 4.7kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit
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NTE2367
NTE2368
200mV,
NTE2368
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Untitled
Abstract: No abstract text available
Text: DISCONTINUED PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT555 ISSUE 1 MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX555 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT
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FXT555
ZTX555
-140V
-100mA,
-10mA*
-10mA,
-300mA,
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