Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TO72 PACKAGE Search Results

    TO72 PACKAGE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    TO72 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CNY18V

    Abstract: CNY18IV CNY18 CNY18III
    Text: CNY18 Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for high reliability requirements. 96 12257


    Original     		PDF CNY18 CNY18 CNY18III CNY18IV CNY18V 11-Jun-96 D-74025 CNY18V CNY18IV CNY18III

    K120P

    Abstract: No abstract text available
    Text: K120P TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The K120P consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically sealed 4 lead TO72 metal can package for high reliability requirements.


    Original     		PDF K120P K120P K12substances. D-74025

    TO72 package n-channel jfet

    Abstract: TRANISTOR JFET TO72 package NTE452
    Text: NTE452 Silicon N–Channel JFET Transistor VHF Amplifier, Mixer Description: The NTE452 is a silicon, N–channel junction field effect tranistor JFET in a TO72 type package designed to be used in the depletion mode in VHF/UHF amplifiers. Absolute Maximum Ratings:


    Original     		PDF NTE452 NTE452 100MHz 400MHz TO72 package n-channel jfet TRANISTOR JFET TO72 package

    NTE456

    Abstract: TO72 package
    Text: NTE456 N–Channel Silicon JFET General Purpose Amp, Switch Description: The NTE456 is an N–Channel junction silicon field–effect transistor in a TO72 type package designed for general purpose amplifier and switching applications. Absolute Maximum Ratings:


    Original     		PDF NTE456 NTE456 30MHz 100Hz 630ms, TO72 package

    K120P

    Abstract: b 11061
    Text: K120P Optocoupler with Phototransistor Output Description The K120P consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a hermetically sealed 4-lead TO72 metal can package for high reliability requirements. 96 12257


    Original     		PDF K120P K120P 13-Jun-96 D-74025 b 11061

    cny18

    Abstract: Telefunken Phototransistor
    Text: CNY18 TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically sealed 4 lead TO72 metal can package for high reliability requirements.


    Original     		PDF CNY18 CNY18 D-74025 Telefunken Phototransistor

    scs thyristor

    Abstract: TO72 package
    Text: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage


    Original     		PDF NTE239 NTE239 scs thyristor TO72 package

    scs thyristor

    Abstract: icer capacitor NTE239
    Text: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage


    Original     		PDF NTE239 NTE239 scs thyristor icer capacitor

    To-206AF

    Abstract: TO72 package To206AF 206af TO72 1455
    Text: Semelab Aerospace Package Dimensions 5.31 0.210 5.84 (0.230) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 2.54 (0.100) Nom. 4 12.7 (0.500) min. 3 0.48 (0.019) 0.41 (0.016) dia. 1 2 Dimensions in mm (inches) TO72 Semelab Plc Tel +44 (0) 1455 556565


    Original     		PDF O-206AF) To-206AF TO72 package To206AF 206af TO72 1455

    2N3824

    Abstract: 2N6660Q 2N6660CSM4-JQR-B TO276AB 2N4393CSMJ
    Text: Search Results Part number search for devices beginning "2N3824" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N3824 N-Channel TO72 50V - 0.3W -


    Original     		PDF 2N3824" 2N3824 2N3824LP 2N3824-TO46 2N3824-TO72 2N6660" 2N6660 2N6660CSM4 2N6660CSM4-JQR-B 2N6660-JQR-B 2N6660Q TO276AB 2N4393CSMJ

    2N3907

    Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
    Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 cont TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont)


    Original     		PDF 2N2604-05 2N2907A-T46 2N3485-86 2N3508-09 2N5581-82 BC182-TO46 BC212-TO46 BFY74-77 BSV91 BSX20-21 2N3907 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252

    BF480

    Abstract: R950 Avantek S 2n3570 2SC988
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W V(BR)CBO fosc Max Gp Po N.F. at fTest (V) (Hz) (dB) (W) (dB) (Hz) Ic Max (A) Toper MatI. Max (OC) Package Style UHF/Microwave Transistors, Bipolar NPN (Cont'd) 5 10 15 20 2N6619


    Original     		PDF 2N6619 2N6620 BFR15A MA42260-2B7 MM2261-2B7 2N6597 2N6598 BF480 R950 Avantek S 2n3570 2SC988

    40673 MOSFET

    Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET 3SK107F
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS M loss Max (A) Po Max (W) ros (on) (Ohms) 9FS Min (S) VGS(th) Max (V) Cln Max (F) tr Max (s) tt Max (s) Toper Max (OC) Package Style N-Channel Dual-Gate T trode, (Cont' d) 5 10 BF964 BF966 BF966 BF966 3SK107E


    Original     		PDF BF964 BF966 3SK107E 3SK107F 3SK107G BF996S 40673 MOSFET MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET

    2N3609

    Abstract: 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (S) Max (V) elN Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style P-Chann I Enhanc ment-Typ , (Cont'd) 5 10 15 20 25 30 TP0102N3 TPOS02N3


    Original     		PDF TP0102N3 TPOS02N3 TP0102N2 TP0602N2 2N3609 MFE823 2N4352 3N208 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet

    2SK30ATMY

    Abstract: 2SK30ATM Y PN4338 2SK68A-K MPF3822 2SK160A 2SK117Y 2SK514E 2SK30ATM-Y 2SK433
    Text: JUNCTION FET Item Number Part Number Manufacturer g,. V BR GSS VGS(off) Max ( IGSS Max A) Cln Ma~ Toper Max °C) (F) Package Style N-Chann I JFETs, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 2N3068A 2N3068A 2N3068A 2SK381 2SK433 KE3687


    Original     		PDF 2N3068A 2SK381 2SK433 KE3687 PN3687 2N3687 2SK30ATMY 2SK30ATM Y PN4338 2SK68A-K MPF3822 2SK160A 2SK117Y 2SK514E 2SK30ATM-Y

    NE24483

    Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC


    Original     		PDF S01543 AF367 AF280S 2N2999 2N2415 2N2416 2SA1245 BFQ24 NE59333 BFQ52 NE24483 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119

    CNY18

    Abstract: CNY18IV CNY18III CNY18V
    Text: Tem ic CNY18 S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for


    OCR Scan     		PDF cny18 CNY18III CNY18IV CNY18V ll-Jun-96 00103bt. DDlfl371 -Jun-96

    Untitled

    Abstract: No abstract text available
    Text: Tem ic CNY18 S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for


    OCR Scan     		PDF CNY18 CNY18 CNY18III CNY18IV CNY18V 11-Jun-96

    BF167

    Abstract: BF200 transistor BF180 transistor 2sc2570 2n3600 2N4135 BFL84 2N3932 2N3933 2N4134
    Text: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCBO VCE0 V EBO (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9


    OCR Scan     		PDF 2N3933 2N4134 2N4135 2N42S9 BF167 2N2857 2N3478 2N3600 2NS180 MRFS01 BF200 transistor BF180 transistor 2sc2570 BFL84 2N3932

    IT1701

    Abstract: 2N4351 3N172 3N163 3N164 3N170 3N171 IT1750 M116 M117
    Text: I HA R R I S S E M I C O N D S E C T O R 27E D T SeS i; O 4302 27 1 QD157G1 0 BBHAS g • T r'O l" 0 I T -Z -7-Z 5 Switching/Am plifier Transistors M O S F E T s — N -C h a n n e l PART NUMBER PACKAGE VGS TH I V Max Min BVds S V Min •dss pA Max •gss


    OCR Scan     		PDF 43G2E71 2N4351 3N170 3N171 IT1750 3N164 3N172 3N173 -10nA IT1700 IT1701 3N163 M116 M117

    BF167

    Abstract: 2SC2570 2N4259 BF180 2N4134 2N3932 2N3933 2N4135 BF173 BF181
    Text: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN Maximum Ratings Type No. VCB0 VCE0 VEBO (V) (V) (V) Min Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) CDIL 'cBO *r 'c NF O Freq VCB hFE 0 'c * VCE VCE(Sat) & VBE(Sal) ® !C 'ces ® vce Cot


    OCR Scan     		PDF 2N3933 2N4134 2N4135 2N4259 BF167 O-72-1 2N918 2N2857 2N3478 2N3600 2SC2570 BF180 2N3932 BF173 BF181

    SE-5023

    Abstract: SE5050 2N918 JAN TO-72 SE5055 2N918 2N3137 2n918jan J 2N918 SE8010
    Text: TRANSISTORS—SMALL SIGNAL NPN RF—IF AMPLIFIER A N D OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY METAL PACKAGE P.G. V CEO h NF Cob PD (OSC. Po) dB @ f dB @ VOLTS MHz pF MIN MIN MAX 9.0 0.5 6.0 @ MAX MHz TYPE MIN SE8010 SE5023 10.8 @ 27 60 22.5 @ 45 20


    OCR Scan     		PDF SE8010 SE5023 SE5024 SE5055 2N707 SE5050 SE5051 2N917 2N918 SE5052 SE-5023 2N918 JAN TO-72 2N3137 2n918jan J 2N918

    2N3933

    Abstract: BF180 BF181 2sc2570 2N3932 2N4134 2N4135 BF167 BF173 BF182
    Text: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCB0 VCE0 V EB0 (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9


    OCR Scan     		PDF 2N3933 2N4134 2N4135 2N42S9 BF167 O-72-1 2N2857 2N3478 2N3600 2NS180 BF180 BF181 2sc2570 2N3932 BF173 BF182

    PN4340

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 27E D Bi M3G2271 OOlSb'n b Hi HAS ^ T' n i-oi-2L7~ U Ö Amplifier Transistors Junction FETs — N-Channel PART NUMBER 9ts /imho PACKAGE* Min •dss mA Min Max Vp V Min Max •gss pA Max BVqss C|ss V pF Min Max Cres pF Max en nV/VHz


    OCR Scan     		PDF M3G2271 2N3684 2N3685 2N3686 2N3687 2N4117 2N4117A 2N4118 2N4118A 2N4119 PN4340