CNY18V
Abstract: CNY18IV CNY18 CNY18III
Text: CNY18 Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for high reliability requirements. 96 12257
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CNY18
CNY18
CNY18III
CNY18IV
CNY18V
11-Jun-96
D-74025
CNY18V
CNY18IV
CNY18III
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K120P
Abstract: No abstract text available
Text: K120P TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The K120P consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically sealed 4 lead TO72 metal can package for high reliability requirements.
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K120P
K120P
K12substances.
D-74025
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TO72 package n-channel jfet
Abstract: TRANISTOR JFET TO72 package NTE452
Text: NTE452 Silicon N–Channel JFET Transistor VHF Amplifier, Mixer Description: The NTE452 is a silicon, N–channel junction field effect tranistor JFET in a TO72 type package designed to be used in the depletion mode in VHF/UHF amplifiers. Absolute Maximum Ratings:
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NTE452
NTE452
100MHz
400MHz
TO72 package n-channel jfet
TRANISTOR
JFET
TO72 package
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NTE456
Abstract: TO72 package
Text: NTE456 N–Channel Silicon JFET General Purpose Amp, Switch Description: The NTE456 is an N–Channel junction silicon field–effect transistor in a TO72 type package designed for general purpose amplifier and switching applications. Absolute Maximum Ratings:
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NTE456
NTE456
30MHz
100Hz
630ms,
TO72 package
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K120P
Abstract: b 11061
Text: K120P Optocoupler with Phototransistor Output Description The K120P consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a hermetically sealed 4-lead TO72 metal can package for high reliability requirements. 96 12257
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K120P
K120P
13-Jun-96
D-74025
b 11061
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cny18
Abstract: Telefunken Phototransistor
Text: CNY18 TELEFUNKEN Semiconductors Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically sealed 4 lead TO72 metal can package for high reliability requirements.
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CNY18
CNY18
D-74025
Telefunken Phototransistor
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scs thyristor
Abstract: TO72 package
Text: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage
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NTE239
NTE239
scs thyristor
TO72 package
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scs thyristor
Abstract: icer capacitor NTE239
Text: NTE239 Silicon Controlled Switch SCS Description: The NTE239 is a silicon controlled switch in a TO72 type package designed for use as a driver for a numerical indicator tube and switching applications. Features: D Selective Breakover Voltage D Low ON Voltage
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NTE239
NTE239
scs thyristor
icer capacitor
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To-206AF
Abstract: TO72 package To206AF 206af TO72 1455
Text: Semelab Aerospace Package Dimensions 5.31 0.210 5.84 (0.230) 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 2.54 (0.100) Nom. 4 12.7 (0.500) min. 3 0.48 (0.019) 0.41 (0.016) dia. 1 2 Dimensions in mm (inches) TO72 Semelab Plc Tel +44 (0) 1455 556565
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O-206AF)
To-206AF
TO72 package
To206AF
206af
TO72
1455
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2N3824
Abstract: 2N6660Q 2N6660CSM4-JQR-B TO276AB 2N4393CSMJ
Text: Search Results Part number search for devices beginning "2N3824" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) 2N3824 N-Channel TO72 50V - 0.3W -
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2N3824"
2N3824
2N3824LP
2N3824-TO46
2N3824-TO72
2N6660"
2N6660
2N6660CSM4
2N6660CSM4-JQR-B
2N6660-JQR-B
2N6660Q
TO276AB
2N4393CSMJ
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2N3907
Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 cont TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont)
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2N2604-05
2N2907A-T46
2N3485-86
2N3508-09
2N5581-82
BC182-TO46
BC212-TO46
BFY74-77
BSV91
BSX20-21
2N3907
2c415
2N3409
BSV81
BC107-109
2N3209
2N3680
2N3036L
2N6534
2N5252
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BF480
Abstract: R950 Avantek S 2n3570 2SC988
Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W V(BR)CBO fosc Max Gp Po N.F. at fTest (V) (Hz) (dB) (W) (dB) (Hz) Ic Max (A) Toper MatI. Max (OC) Package Style UHF/Microwave Transistors, Bipolar NPN (Cont'd) 5 10 15 20 2N6619
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2N6619
2N6620
BFR15A
MA42260-2B7
MM2261-2B7
2N6597
2N6598
BF480
R950
Avantek S
2n3570
2SC988
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40673 MOSFET
Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET 3SK107F
Text: MOSFET Item Number Part Number Manufacturer V BR OSS M loss Max (A) Po Max (W) ros (on) (Ohms) 9FS Min (S) VGS(th) Max (V) Cln Max (F) tr Max (s) tt Max (s) Toper Max (OC) Package Style N-Channel Dual-Gate T trode, (Cont' d) 5 10 BF964 BF966 BF966 BF966 3SK107E
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BF964
BF966
3SK107E
3SK107F
3SK107G
BF996S
40673 MOSFET
MFE131 mosfet
3SK77GR
3N159
40673
MPF201
MFE521
3SK77BL
3N200 MOSFET
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2N3609
Abstract: 2N4120 2N4067 2N5548 diode 600m nec 500t 3sj11a 3n156 3N155 to99 mosfet
Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (S) Max (V) elN Max (F) tr Max (s) tf Max (s) Toper Max (OC) Package Style P-Chann I Enhanc ment-Typ , (Cont'd) 5 10 15 20 25 30 TP0102N3 TPOS02N3
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TP0102N3
TPOS02N3
TP0102N2
TP0602N2
2N3609
MFE823
2N4352
3N208
2N4120
2N4067
2N5548
diode 600m
nec 500t
3sj11a
3n156
3N155
to99 mosfet
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2SK30ATMY
Abstract: 2SK30ATM Y PN4338 2SK68A-K MPF3822 2SK160A 2SK117Y 2SK514E 2SK30ATM-Y 2SK433
Text: JUNCTION FET Item Number Part Number Manufacturer g,. V BR GSS VGS(off) Max ( IGSS Max A) Cln Ma~ Toper Max °C) (F) Package Style N-Chann I JFETs, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 2N3068A 2N3068A 2N3068A 2SK381 2SK433 KE3687
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2N3068A
2SK381
2SK433
KE3687
PN3687
2N3687
2SK30ATMY
2SK30ATM Y
PN4338
2SK68A-K
MPF3822
2SK160A
2SK117Y
2SK514E
2SK30ATM-Y
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NE24483
Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC
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S01543
AF367
AF280S
2N2999
2N2415
2N2416
2SA1245
BFQ24
NE59333
BFQ52
NE24483
NE38883
BFT93R
NE13783,
ATF-10135
BFT92R
BF936
CFX21
to119
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CNY18
Abstract: CNY18IV CNY18III CNY18V
Text: Tem ic CNY18 S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for
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cny18
CNY18III
CNY18IV
CNY18V
ll-Jun-96
00103bt.
DDlfl371
-Jun-96
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Untitled
Abstract: No abstract text available
Text: Tem ic CNY18 S e m i c o n d u c t o r s Optocoupler with Phototransistor Output Description The CNY18 consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a hermetically-sealed 4 lead TO72 metal can package for
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CNY18
CNY18
CNY18III
CNY18IV
CNY18V
11-Jun-96
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BF167
Abstract: BF200 transistor BF180 transistor 2sc2570 2n3600 2N4135 BFL84 2N3932 2N3933 2N4134
Text: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCBO VCE0 V EBO (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9
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2N3933
2N4134
2N4135
2N42S9
BF167
2N2857
2N3478
2N3600
2NS180
MRFS01
BF200 transistor
BF180
transistor 2sc2570
BFL84
2N3932
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IT1701
Abstract: 2N4351 3N172 3N163 3N164 3N170 3N171 IT1750 M116 M117
Text: I HA R R I S S E M I C O N D S E C T O R 27E D T SeS i; O 4302 27 1 QD157G1 0 BBHAS g • T r'O l" 0 I T -Z -7-Z 5 Switching/Am plifier Transistors M O S F E T s — N -C h a n n e l PART NUMBER PACKAGE VGS TH I V Max Min BVds S V Min •dss pA Max •gss
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43G2E71
2N4351
3N170
3N171
IT1750
3N164
3N172
3N173
-10nA
IT1700
IT1701
3N163
M116
M117
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BF167
Abstract: 2SC2570 2N4259 BF180 2N4134 2N3932 2N3933 2N4135 BF173 BF181
Text: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN Maximum Ratings Type No. VCB0 VCE0 VEBO (V) (V) (V) Min Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) CDIL 'cBO *r 'c NF O Freq VCB hFE 0 'c * VCE VCE(Sat) & VBE(Sal) ® !C 'ces ® vce Cot
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2N3933
2N4134
2N4135
2N4259
BF167
O-72-1
2N918
2N2857
2N3478
2N3600
2SC2570
BF180
2N3932
BF173
BF181
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SE-5023
Abstract: SE5050 2N918 JAN TO-72 SE5055 2N918 2N3137 2n918jan J 2N918 SE8010
Text: TRANSISTORS—SMALL SIGNAL NPN RF—IF AMPLIFIER A N D OSCILLATOR TRANSISTORS BY ASCENDING FREQUENCY METAL PACKAGE P.G. V CEO h NF Cob PD (OSC. Po) dB @ f dB @ VOLTS MHz pF MIN MIN MAX 9.0 0.5 6.0 @ MAX MHz TYPE MIN SE8010 SE5023 10.8 @ 27 60 22.5 @ 45 20
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SE8010
SE5023
SE5024
SE5055
2N707
SE5050
SE5051
2N917
2N918
SE5052
SE-5023
2N918 JAN
TO-72
2N3137
2n918jan
J 2N918
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2N3933
Abstract: BF180 BF181 2sc2570 2N3932 2N4134 2N4135 BF167 BF173 BF182
Text: TO-72 METAL-CAN PACKAGE TRANSISTORS NPN E lectrical C haracteristics Maxim um R atings Type No. ts o (MA) hFE VCB « VCB0 VCE0 V EB0 (V) Min (V) Min (V) Min 2N3933 40 30 2.5 0.01 15 60 200 2 2N4134 30 30 3.0 0.05 10 25 200 2N4135 30 30 3.0 0.05 10 25 2N42S9
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2N3933
2N4134
2N4135
2N42S9
BF167
O-72-1
2N2857
2N3478
2N3600
2NS180
BF180
BF181
2sc2570
2N3932
BF173
BF182
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PN4340
Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR 27E D Bi M3G2271 OOlSb'n b Hi HAS ^ T' n i-oi-2L7~ U Ö Amplifier Transistors Junction FETs — N-Channel PART NUMBER 9ts /imho PACKAGE* Min •dss mA Min Max Vp V Min Max •gss pA Max BVqss C|ss V pF Min Max Cres pF Max en nV/VHz
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M3G2271
2N3684
2N3685
2N3686
2N3687
2N4117
2N4117A
2N4118
2N4118A
2N4119
PN4340
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