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    TO5 TRANSISTOR BASE Search Results

    TO5 TRANSISTOR BASE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    TO5 TRANSISTOR BASE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN Transistor VCEO 1000V

    Abstract: BUL54A-TO5
    Text: SEME BUL54A-TO5 LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 8.51 0.34 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Designed for use in electronic ballast applications 6.10 (0.240) 6.60 (0.260)


    Original     		PDF BUL54A-TO5 O-205AA) NPN Transistor VCEO 1000V BUL54A-TO5

    TO-205AA

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR 2N2891LL • V BR CEO = 80V (Min). • Hermetic TO5 (TO-205AA) Metal Package. • Ideally Suited For Low Frequency Large Signal Applications (High Voltage). • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


    Original     		PDF 2N2891LL O-205AA) TO-205AA

    NPN Monolithic Transistor Pair

    Abstract: Darlington pair IC darlington pair transistor NTE904
    Text: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington


    Original     		PDF NTE904 NTE904 12-Lead 31-j1 NPN Monolithic Transistor Pair Darlington pair IC darlington pair transistor

    Darlington pair IC

    Abstract: NTE904 darlington pair transistor NPN Monolithic Transistor Pair
    Text: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington


    Original     		PDF NTE904 NTE904 Darlington pair IC darlington pair transistor NPN Monolithic Transistor Pair

    Untitled

    Abstract: No abstract text available
    Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and


    Original     		PDF BUL54A-TO5 O-205AA)

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR 2N2891LL • V BR CEO = 80V (Min). • Hermetic TO5 (TO-205AA) Metal Package. • Ideally Suited For Low Frequency Large Signal Applications (High Voltage). • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


    Original     		PDF 2N2891LL O-205AA) 57mW/Â -65ent

    transistor VCEO 1000V

    Abstract: NPN Transistor VCEO 1000V BUL54A-TO5 LE17
    Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and


    Original     		PDF BUL54A-TO5 O-205AA) transistor VCEO 1000V NPN Transistor VCEO 1000V BUL54A-TO5 LE17

    TO-205AA

    Abstract: TO205AA
    Text: SILICON NPN TRANSISTOR 2N5786L • Low Saturation Voltage. High Gain At High Current. • Hermetic TO5 TO-205AA Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF 2N5786L O-205AA) TO-205AA TO205AA

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRANSISTOR 2N5786L • Low Saturation Voltage. High Gain At High Current. • Hermetic TO5 TO-205AA Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)


    Original     		PDF 2N5786L O-205AA)

    2N2219

    Abstract: 2N2219 transistor 2N2219A 2N2218 transistor NPN transistor 2n2218 Transistor 2N2219A transistor 2N2219 transistor 2n2218 2N2218A
    Text: TECHNICAL DATA NPN SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 Devices 2N2218 2N2218A 2N2218AL Qualified Level JAN JANTX JANTXV JANS 2N2219 2N2219A 2N2219AL MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


    Original     		PDF MIL-PRF-19500/251 2N2218 2N2218A 2N2218AL 2N2219 2N2219A 2N2219AL 2N2219 2N2218A; 2N2219 transistor 2N2218 transistor NPN transistor Transistor 2N2219A transistor 2N2219 transistor 2n2218

    To5 transistor

    Abstract: TRANSISTOR L 287 A kovar "nickel cap" TO5 gas sensor M5000 M5500 transistor d 808
    Text: g GENERAL PURPOSE SENSORS GLASS-TO-METAL SEAL / TRANSISTOR BASE SENSORS TYPE M5000: Features • JEDEC “TO” style transistor base headers with flake thermistors suspended by their leads across the pins in a variety of electrical circuit configurations.


    Original     		PDF M5000: di15857-3397 M5000 M5500 To5 transistor TRANSISTOR L 287 A kovar "nickel cap" TO5 gas sensor transistor d 808

    TRANSISTOR L 287 A

    Abstract: To5 transistor TO-5 window Cap TRANSISTOR 287 A "nickel cap" M5000 M5500 kovar TO5 transistor base transistor 808
    Text: GENERAL PURPOSE SENSORS GLASS-TO-METAL SEAL / TRANSISTOR BASE SENSORS TYPE M5000: Features • JEDEC “TO” style transistor base headers with flake thermistors suspended by their leads across the pins in a variety of electrical circuit configurations. • Flake thermistors are ideal for non-contact, infrared temperature


    Original     		PDF M5000: M5000 M5500 TRANSISTOR L 287 A To5 transistor TO-5 window Cap TRANSISTOR 287 A "nickel cap" kovar TO5 transistor base transistor 808

    372C

    Abstract: diode 10x
    Text: 66099 RADIATION TOLERANT TO-5 OPTOCOUPLER OPTOELECTRONIC PRODUCTS DIVISION 5/25/05 Rev C Features: • Meets or exceeds MIL-PRF-19500 radiation requirements • Current Transfer Ratio-150% typical • 1kVdc electrical input to output isolation • Base lead provided for conventional transistor


    Original     		PDF MIL-PRF-19500 Ratio-150% 372C diode 10x

    Untitled

    Abstract: No abstract text available
    Text: 2N2218A TO-5 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2218A TO-5 is a silicon NPN transistor manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications.


    Original     		PDF 2N2218A 2N2218A 150mA 500mA 100kHz 150mA, 25-April

    NDE0003B

    Abstract: No abstract text available
    Text: LM195, LM395 www.ti.com SNOSBO4B – MAY 2004 – REVISED NOVEMBER 2004 LM195/LM395 Ultra Reliable Power Transistors Check for Samples: LM195, LM395 FEATURES 1 • • • • • • • • 2 Internal Thermal Limiting Greater than 1.0A Output Current 3.0 A Typical Base Current


    Original     		PDF LM195, LM395 LM195/LM395 LP395 O-220 LM195 LM395 NDE0003B

    NDE0003B

    Abstract: LM395 LM395T A-083081-2 RETS195H LM195 National LM195
    Text: LM195, LM395 www.ti.com SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 LM195/LM395 Ultra Reliable Power Transistors Check for Samples: LM195, LM395 FEATURES 1 • • • • • • • • 2 Internal Thermal Limiting Greater than 1.0A Output Current 3.0 A Typical Base Current


    Original     		PDF LM195, LM395 LM195/LM395 LP395 O-220 LM195 LM395 NDE0003B LM395T A-083081-2 RETS195H LM195 National

    LM195

    Abstract: No abstract text available
    Text: LM195, LM395 www.ti.com SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 LM195/LM395 Ultra Reliable Power Transistors Check for Samples: LM195, LM395 FEATURES 1 • • • • • • • • 2 Internal Thermal Limiting Greater than 1.0A Output Current 3.0 A Typical Base Current


    Original     		PDF LM195, LM395 LM195/LM395 LP395 O-220 LM195 LM395

    tyco mil relay

    Abstract: No abstract text available
    Text: 1MS 1MSD 1MSDD 1MST TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ 1MS 1MSD 1MSDD 1MST SENSITIVE TO-5 HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE


    Original     		PDF MIL-R-39016/10 MIL-R-39016/25 MIL-R-39016/26 MIL-R-28776/4 tyco mil relay

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


    OCR Scan     		PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    2N3017

    Abstract: No abstract text available
    Text: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984


    OCR Scan     		PDF 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N3017

    rca 2n3375

    Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
    Text: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)


    OCR Scan     		PDF 000-Series 2N1492 RCA-CA3000 RFT-700E/2L 1076R5 rca 2n3375 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor

    Unitrode transistors data To5

    Abstract: UC195 on 614 TO3 power transistor UC395 transistor 257 transistor 257 isolated unitrode
    Text: UNITRODE CORP/UNITRODE IN T E G R A T E D y IC “ F Smart Power Transistor UNITRODE FEATURES • Greater Than 1.0A Output • 3-OjuA Typical Base Current • 500ns Switching Time • 2.0V Saturation • Directly Interfaces with CMOS or TTL • Internal Thermal Limiting


    OCR Scan     		PDF 500ns O-257 UC295 UC395 UC195/UC395 0Q12M03 UC195 Unitrode transistors data To5 on 614 TO3 power transistor UC395 transistor 257 transistor 257 isolated unitrode

    TO82 TRANSISTOR

    Abstract: TO82 2N2227
    Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C


    OCR Scan     		PDF 25MQSa 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1904 2N1936 2N1937 2N2015 TO82 TRANSISTOR TO82 2N2227

    40411 transistor

    Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
    Text: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66


    OCR Scan     		PDF 2N6465 2N6466 2N6468 2N6469 2N6470 2N6471 2N6472 2N6495 2N6496 2N6500 40411 transistor transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39