SP19A
Abstract: No abstract text available
Text: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.
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BSP19AT1G
OT-223
BSP19AT1/D
SP19A
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ADP3339AKCZ-5-R7
Abstract: ADP3339 ADP3339AKCZ-3-RL7 ADP33xx
Text: High Accuracy, Ultralow IQ, 1.5 A, anyCAP Low Dropout Regulator ADP3339 FEATURES FUNCTIONAL BLOCK DIAGRAM Q1 IN THERMAL PROTECTION R1 CC DRIVER gm R2 02191-0-001 BANDGAP REF GND Figure 1. APPLICATIONS Notebooks, palmtop computers SCSI terminators Battery-powered systems
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ADP3339
OT-223
ADP3339AKCZ-5-R7
ADP3339
ADP3339AKCZ-3-RL7
ADP33xx
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314P
Abstract: EIA-541 FL014 IRFL014
Text: PD - 95316 IRFL1006PbF HEXFET Power MOSFET Surface Mount Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 60V RDS on = 0.22Ω G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier
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IRFL1006PbF
OT-223
EIA-481
EIA-541.
EIA-418-1.
314P
EIA-541
FL014
IRFL014
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2CJQJ
Abstract: sot223 device Marking 20CJQ100 40HF EIA-541 P460
Text: Bulletin PD-20480 rev. H 07/06 20CJQ100 SCHOTTKY RECTIFIER 2 Amp IF AV = 2 Amp VR = 100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 2.0 A VRRM 100 V IFSM @ tp = 5 s sine 380 A VF 0.67 V waveform
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PD-20480
20CJQ100
20CJQ100
OT-223
2CJQJ
sot223 device Marking
40HF
EIA-541
P460
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IRFL024N
Abstract: No abstract text available
Text: PD - 91861A IRFL024N HEXFET Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.075Ω G ID = 2.8A S Description Fifth Generation HEXFETs from International Rectifier
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1861A
IRFL024N
OT-223
IRFL024N
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BF720T1
Abstract: SMD310
Text: ON Semiconductort BF720T1 NPN Silicon Transistor ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 300 Vdc Collector-Base Voltage VCBO 300 Vdc Collector-Emitter Voltage VCER 300 Vdc Emitter-Base Voltage
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BF720T1
318E-04,
O-261AA)
r14525
BF720T1/D
BF720T1
SMD310
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20cjq030
Abstract: EIA-541
Text: Bulletin PD - 20477 rev. C 06/01 20CJQ030 SCHOTTKY RECTIFIER 2 Amp Major Ratings and Characteristics Characteristics IF AV Rectangular waveform Desciption / Features 20CJQ030 Units 2.0 A V RRM 30 V IFSM @ tp = 5 µs sine 400 A VF @ 1.0Apk, TJ = 125°C ( Per Leg )
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20CJQ030
20CJQ030
EIA-418-1.
EIA-541
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FL014
Abstract: IRFL110 AN-994
Text: PD - 90861A IRFL110 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 100V RDS on = 0.54Ω G ID = 1.5A S Description
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0861A
IRFL110
OT-223
therma10)
FL014
IRFL110
AN-994
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smd fl014
Abstract: FL014 FL014 Example transistor SMD FL014 EIA-541 IRFL014 IRFL4310 838 infra red i*l014 MARKING 93 SOT-223
Text: PD - 91368B IRFL4310 HEXFET Power MOSFET D l l l l l l Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance VDSS = 100V RDS on = 0.20W G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier
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91368B
IRFL4310
OT-223
smd fl014
FL014
FL014 Example
transistor SMD FL014
EIA-541
IRFL014
IRFL4310
838 infra red
i*l014
MARKING 93 SOT-223
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Untitled
Abstract: No abstract text available
Text: PD- 95227 IRFL014PbF _Lead-Free Document Number: 91191 04/28/04 www.vishay.com 1 IRFL014PbF Document Number: 91191 www.vishay.com 2 IRFL014PbF Document Number: 91191 www.vishay.com 3 IRFL014PbF Document Number: 91191 www.vishay.com 4 IRFL014PbF Document Number: 91191
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IRFL014PbF
OT-223
O-261AA)
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-21160 07/06 20CJQ100PbF SCHOTTKY RECTIFIER 2 Amp IF AV = 2 Amp VR = 100V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 2.0 A VRRM 100 V IFSM @ tp = 5 s sine 380 A VF 0.67 V waveform TJ
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PD-21160
20CJQ100PbF
20CJQ100PbF
08-Mar-07
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VISHAY SOT 223 DATE CODE
Abstract: VISHAY SOT LOT CODE
Text: PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description
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PD-95318
IRFL214PbF
OT-223
08-Mar-07
VISHAY SOT 223 DATE CODE
VISHAY SOT LOT CODE
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-21157 07/06 20CJQ030PbF 2 Amp SCHOTTKY RECTIFIER IF AV = 2 Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 2.0 A VRRM 30 V IFSM @ tp = 5 s sine 400 A VF 0.42 V waveform TJ
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PD-21157
20CJQ030PbF
20CJQ030PbF
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 90862A IRFL214 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description
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0862A
IRFL214
OT-223
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD- 95228 IRFL210PbF • Lead-Free Document Number: 91193 04/28/04 www.vishay.com 1 IRFL210PbF Document Number: 91193 www.vishay.com 2 IRFL210PbF Document Number: 91193 www.vishay.com 3 IRFL210PbF Document Number: 91193 www.vishay.com 4 IRFL210PbF Document Number: 91193
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IRFL210PbF
OT-223
O-261AA)
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BSP16T1
Abstract: SMD310
Text: ON Semiconductort BSP16T1 SOT-223 Package High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon SOT–223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300
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BSP16T1
OT-223
318E-04,
O-261AA
r14525
BSP16T1/D
BSP16T1
SMD310
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AIC1190H-18GR8
Abstract: AIC1190H-18GR8TR AIC1190X-XXXXXXX 3.7v 1000mA AIC1190 AIC1190-18PE3TR AIC1190BH-18PM5TR AIC1190-XXXXX AIC1190XX-XXXXXXX SOT223 MARKING L5
Text: AIC1190 Ultra LDO 1A Linear Regulator With Adjustable & Bypass Pin FEATURES DESCRIPTION Guaranteed 1A Output Current. Fast Response in Line/Load Transient Wide Operating Voltage Ranges: 2.3V to 6.0V. 0.1µA Shutdown Standby Current Low Quiescent Current: < 60µA.
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AIC1190
440mV
OT-223
O-220
O-252
AIC1190H-18GR8
AIC1190H-18GR8TR
AIC1190X-XXXXXXX
3.7v 1000mA
AIC1190
AIC1190-18PE3TR
AIC1190BH-18PM5TR
AIC1190-XXXXX
AIC1190XX-XXXXXXX
SOT223 MARKING L5
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IRLL110PBF
Abstract: IRLL110TRPBF
Text: IRLL110, SiHLL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface Mount Available in Tape and Reel
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IRLL110,
SiHLL110
OT-223
OT-223
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
IRLL110PBF
IRLL110TRPBF
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Untitled
Abstract: No abstract text available
Text: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76113T3ST
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Untitled
Abstract: No abstract text available
Text: PD - 97695 AUIRFL024N Features HEXFET Power MOSFET • • • • • • • Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant
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AUIRFL024N
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon E pitaxial Transistor PZT2907AT1 M otorola Preferred Device T h is PNP S ilico n E pitaxial tra n s is to r is d e sig ned fo r use in lin e a r and switching applications. The device is housed in the SOT-223 package which is
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PZT2907AT1
OT-223
PZT2222AT1
b3ti75SS
J357b
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T2T TRANSISTOR
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Sm all-Signal Darlington Transistor BSP52T1 M otorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is
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BSP52T1
OT-223
BSP52T1
inch/1000
BSP52T3
inch/4000
b3b72S5
T2T TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMFT2N25E/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E-FET High Energy Power FET M MFT2N25E N-Channel Enhancement-Mode Silicon Gate T his a d va n ce d high v o lta g e T M O S E -F E T is d e s ig n e d to withstand high energy in the avalanche mode and switch efficiently.
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MMFT2N25E/D
MFT2N25E
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET
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OT-223
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