SUD50NP04-77P
Abstract: TO-252-4L 74439 complementary MOSFET TO252
Text: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V
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SUD50NP04-77P
O-252-4L
SUD50NP04-77P-T4-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SUD50NP04-77P
TO-252-4L
74439
complementary MOSFET TO252
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AP4563AGH-HF
Abstract: No abstract text available
Text: AP4563AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 ▼ Good Thermal Performance RDS ON ▼ Fast Switching Performance ID ▼ RoHS Compliant & Halogen-Free
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AP4563AGH-HF
O-252-4L
100us
100ms
AP4563AGH-HF
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Untitled
Abstract: No abstract text available
Text: SSDF9504 23A, 40V, RDS ON 26m -20A, -40V, RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION TO-252-4L The SSDF9504 provide the designer with best combination
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SSDF9504
O-252-4L
SSDF9504
14-Nov-2012
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AON6704L
Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Text: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower
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O-252)
O-263)
MSOP-10
SC70-3
SC70-6
SC-89-3
SC-89-6
OD523
OD923
OT23-3
AON6704L
AOZ1094
AOZ1094AI
AON7403
AOZ1242
AOZ1014AI
AOZ1212AI
AOZ1361
AON6414AL
Aoz1025
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IC 2025
Abstract: U405DH
Text: S T U405DH S amHop Microelectronics C orp. Nov,20 2007 ver1.0 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 40V 11A P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V - 9A
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U405DH
O-252-4L
O-252-5L
IC 2025
U405DH
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stu407d
Abstract: STU432S STU419S stm8309 STU432 STM6930A STM6922 STU426S STU3525NL stu309dh
Text: Selection Guide - Mosfet Product N Channel Product Rds on / m Ohm max Package Configuration Vds Vgs (±) ID PD (W) STF8220 DFN Dual-N 20 12 7.0 2 STA6610 PDIP-8 Dual-N 30 20 7.6 3 23.0 STA6620 PDIP-8 Dual-N 40 20 7.0 3 25.0 STA6968 PDIP-8 Dual-N 60 20 5.3
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STF8220
STA6610
STA6620
STA6968
STM9926
STM4884A
STM4410A
SDM4410
STM480-40
stu407d
STU432S
STU419S
stm8309
STU432
STM6930A
STM6922
STU426S
STU3525NL
stu309dh
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Untitled
Abstract: No abstract text available
Text: AP4578GH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 60V RDS ON ▼ Good Thermal Performance ID ▼ Fast Switching Performance S1 ▼ RoHS Compliant 72mΩ
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AP4578GH-HF
O-252-4L
100ms
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STU407D
Abstract: U407D TU407D
Text: S T U407D S amHop Microelectronics C orp. J uly 27 2006 ver1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 16A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W )
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U407D
O-252-4L
O-252-4L
STU407D
U407D
TU407D
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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Untitled
Abstract: No abstract text available
Text: DMC3021LK4 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Device V BR DSS Q1 30V Q2 -30V Features and Benefits RDS(ON) max ID max TC = +25°C • 0.6mm Profile – Ideal for Low Profile Applications • PCB Footprint of 4mm 21mΩ @ VGS = 10V
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DMC3021LK4
AEC-Q101
DS35082
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SUD50NP04-77P
Abstract: No abstract text available
Text: New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 40 - 40 rDS(on) (Ω) ID (A)a Qg (Typ.) 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 0.040 at VGS = - 10 V -8 0.050 at VGS = - 4.5 V
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SUD50NP04-77P
O-252-4L
SUD50NP04-77P-T4-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SUD50NP04-77P
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Untitled
Abstract: No abstract text available
Text: AP4569GH Pb Free Plating Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D1/D2 Good Thermal Performance Fast Switching Performance S1 RoHS Compliant G1 40V RDS ON 42m ID 10.5A P-CH BVDSS
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AP4569GH
O-252-4L
100ms
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Untitled
Abstract: No abstract text available
Text: AP4563AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D1/D2 Good Thermal Performance RDS ON Fast Switching Performance ID RoHS Compliant & Halogen-Free 40V 20m
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AP4563AGH-HF
O-252-4L
100us
100ms
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AOD609
Abstract: aod609 datasheet
Text: AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD609
AOD609
O-252-4L
aod609 datasheet
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To-252-4
Abstract: RD33
Text: AP4526AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 ▼ Good Thermal Performance RDS ON ▼ Fast Switching Performance ID ▼ RoHS Compliant & Halogen-Free
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AP4526AGH-HF
O-252-4L
100us
100ms
To-252-4
RD33
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AP4506
Abstract: AP4506ge AP4506GEH TO252-4L AP4506G AP4506GEH-HF
Text: AP4506GEH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 30V RDS ON ▼ Good Thermal Performance ID ▼ Fast Switching Performance S1 ▼ RoHS Compliant
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AP4506GEH-HF
O-252-4L
100us
100ms
AP4506
AP4506ge
AP4506GEH
TO252-4L
AP4506G
AP4506GEH-HF
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Untitled
Abstract: No abstract text available
Text: AP4526AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D1/D2 Good Thermal Performance RDS ON Fast Switching Performance ID RoHS Compliant & Halogen-Free 40V 32m
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AP4526AGH-HF
O-252-4L
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4506GEH
Abstract: AP4506GEH
Text: AP4506GEH RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 ▼ Good Thermal Performance 30V RDS ON ▼ Fast Switching Performance S1 24mΩ ID G1 S2 9A P-CH BVDSS
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AP4506GEH
O-252-4L
O-252
4506GEH
4506GEH
AP4506GEH
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CEU4269
Abstract: TO-252-4L
Text: CEU4269 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES D1/D2 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -12A , RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON).
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CEU4269
O-252-4L
O-252-4L
CEU4269
TO-252-4L
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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Untitled
Abstract: No abstract text available
Text: CED4279/CEU4279 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES D1/D2 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. G1 G2 Super high dense cell design for extremely low RDS(ON).
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CED4279/CEU4279
O-252-4L
O-252-4L
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STU409DH
Abstract: No abstract text available
Text: S T U409DH Green Product S amHop Microelectronics C orp. Dec,21,2009 V er1.1 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 40V 18A Max V DS S
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U409DH
O-252-4L
O-252-4L
STU409DH
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP4563AGH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS ON 20mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 9.6A -40V 36mΩ
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AP4563AGH-HF-3
O-252-4L
AP4563AGH-HF-3
O-252
AP4563A
4563AGH
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Untitled
Abstract: No abstract text available
Text: AOD607 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD607 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other
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AOD607
AOD607
O-252-4L
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