2SD1758
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors 2SD1758 z TRANSISTOR NPN TO-251 TO-252-2L FEATURES Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC/IB =2A/0.2A) 1.BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-251/TO-252-2
2SD1758
O-251
O-252-2L
500mA
100MHz
2SD1758
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2SB1412
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 2SB1412 TRANSISTOR PNP TO-251 TO-252-2L FEATURES Power amplifier applications 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value
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O-251/TO-252-2L
2SB1412
O-251
O-252-2L
-500mA
-100mA
-50mA
30MHz
2SB1412
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Regulators CJ78M05 Three-terminal positive voltage regulator TO-251-3L TO-252-2L FEATURES Maximum output current IOM: 0.5 A Output voltage VO: 5V Continuous total dissipation
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O-251-3L/TO-252-2L
CJ78M05
O-251-3L
O-252-2L
350mA,
200mA
350mA
100KHz
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TO-251 Package
Abstract: SPN8882 SPN8882T251T SPN8882T252R 5V GATE TO SOURCE VOLTAGE MOSFET TO-251 Outline TO-252 N-channel MOSFET
Text: SPN8882 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall
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SPN8882
SPN8882
0V/40A
O-25ise
TO-251 Package
SPN8882T251T
SPN8882T252R
5V GATE TO SOURCE VOLTAGE MOSFET
TO-251 Outline
TO-252 N-channel MOSFET
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MOSFET 20V 80A
Abstract: STN410D MOSFET, Enhancement, N Channel, 30V
Text: STN4 10 STN410 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN410D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using
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STN410
STN410D
O-252
O-251
O-252
MOSFET 20V 80A
MOSFET, Enhancement, N Channel, 30V
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STN454D
Abstract: 100A Mosfet Stanson Technology STN454 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR uis test APD50 MOSFET 20V 100A MOSFET 20V 120A 5025W
Text: STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using
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STN454D
STN454D
O-252
O-251
0V/12
O-252
O-252-2L
100A Mosfet
Stanson Technology
STN454
n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
uis test
APD50
MOSFET 20V 100A
MOSFET 20V 120A
5025W
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STP413D
Abstract: TO-252 MOSFET p channel p channel enhancement mosfet P channel MOSFET 10A 115td MOSFET 20V 120A p channel power trench mosfet uis test p channel mosfet 10a 20v STP41
Text: STP413D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP413D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either
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STP413D
STP413D
O-252
O-251
-40V/-12
-40V/-8
O-252
O-251ancement
TO-252 MOSFET p channel
p channel enhancement mosfet
P channel MOSFET 10A
115td
MOSFET 20V 120A
p channel power trench mosfet
uis test
p channel mosfet 10a 20v
STP41
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2L TRANSISTOR（NPN） FEATURES 1.BASE ∙ High DC current gain ∙ Electrically similar to popular TIP122 ∙ Built-in a damper diode at E-C
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O-251/TO-252-2L
MJD122
O-251
O-252-2L
TIP122
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251-3L TO-252-2L FEATURE • power switching applications 123 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol
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O-251-3L/TO-252-2L
3DD13002
O-251-3L
O-252-2L
Parameter100Î
200mA
200mA,
100mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors CJ78M05 Three-terminal positive voltage regulator TO-251 TO-252-2L FEATURES ∙ Output Current up to 500mA 123 1.IN ∙ Internal thermal overload protection
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O-251/TO-252-2L
CJ78M05
O-251
O-252-2L
500mA
5mA-350mA
200mA
350mA
100KHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR NPN TO-251 TO-252-2L FEATURE • power switching applications 123 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter
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O-251/TO-252-2L
3DD13002
O-251
O-252-2L
200mA
200mA,
100mA
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sa1117
Abstract: 1117s 1117s33 1117-D33 1117-S33 1117s 3.3 1117h 1117H-1 1117d 1117-S25
Text: SA1117 1A LDO 稳压器电路 概述 SA1117是一款正电压输出的低压降三端线性稳压电 路，在1A输出电流下的压降为1.2V。 SA1117分为两个版本，固定电压输出版本和可调电 压输出版本。固定输出电压1.5V1.8V、2.5V、3.3V、
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SA1117
SA1117H-ADJTR
SA1117H-ADJ
SA1117H-1
sa1117
1117s
1117s33
1117-D33
1117-S33
1117s 3.3
1117h
1117H-1
1117d
1117-S25
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MJD42C
Abstract: TRANSISTOR T4
Text: MJD42C PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix)
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MJD42C
O-251/TO-252-2L
O-251
TIP41
TIP42
-500mA
-100A
-30mA
TRANSISTOR T4
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transistor 2sb1412
Abstract: 2SB1412
Text: 2SB1412 PNP TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Power amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage
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O-251/TO-252-2L
2SB1412
O-251
O-252-2L
-500mA
-100mA
-50mA
30MHz
transistor 2sb1412
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Untitled
Abstract: No abstract text available
Text: MJD122 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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MJD122
O-251/TO-525-2L
O-251
TIP122
O-252-2L
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B772 TRANSISTOR
Abstract: br b772 TRANSISTOR b772 b772 TRANSISTOR br b772
Text: B772 Transistor PNP 1. BASE TO-252-2L 2. COLLECTOR 3. EMITTER Features Low speed switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters) Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage
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O-252-2L
-100A
-10mA
-100A
10MHz
B772 TRANSISTOR
br b772
TRANSISTOR b772
b772
TRANSISTOR br b772
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1117s
Abstract: 1117s 3.3 1117s regulator 1117s transistor sa1117 1117s adj 1117H-1 1117s 5.0 1117s33 transistor marking PB
Text: SA1117 1A LDO VOLTAGE REGULATOR DESCRIPTION The SA1117 is a positive low voltage dropout regulator, voltage dropout is only 1.2V at 1A. SA1117 has two versions: the fixed version and the adjustable version. VOUT has a tolerance of less than 1% for fixed versions
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SA1117
SA1117
1117s
1117s 3.3
1117s regulator
1117s transistor
1117s adj
1117H-1
1117s 5.0
1117s33
transistor marking PB
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HFE100
Abstract: No abstract text available
Text: 2SD1899-Z NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low VCE(sat) VCE(sat)=0.25V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value Units VCBO Collector-Base Voltage
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O-251/TO-252-2L
2SD1899-Z
O-251
O-252-2L
200mA
600mA
150mA
HFE100
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Darlington Transistor TO251
Abstract: to-252-2
Text: MJD112 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Complementary darlington power transistors dpak for surface mount applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value
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MJD112
O-251/TO-525-2L
O-251
O-252-2L
500mA
Darlington Transistor TO251
to-252-2
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24v 6A mosfet
Abstract: SPP3095T252RGB SPP3095 SPP3095T252RG
Text: SPP3095 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP3095 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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SPP3095
SPP3095
-30V/-
24v 6A mosfet
SPP3095T252RGB
SPP3095T252RG
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SPN8878
Abstract: 24V 20A mosfet switch
Text: SPN8878 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878 has been designed specifically to improve the overall
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SPN8878
SPN8878
0V/20A
0V/15A
24V 20A mosfet switch
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SPN8882
Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET
Text: SPN8882 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8882 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8882 has been designed specifically to improve the overall
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SPN8882
SPN8882
0V/40A
O-25rwise
5V GATE TO SOURCE VOLTAGE MOSFET
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thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™
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1117-33
Abstract: 1117 3.3 1117AD 1117-3.3 1117-adj c 1117 adj 1117 L 1117-12 1117aDJ 1117-18
Text: 1A LOW DROPOUT LINEAR REGULATOR FSP1117 FEATURES z z z z Low Dropout Voltage: 1.15V at 1A Output Current Trimmed Current Limit On-chip Thermal Shutdown Three-terminal Adjustable or Fixed 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5.0V APPLICATIONS z z z z z z
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FSP1117
FSP1117
091Basic
181Basic
1117-33
1117 3.3
1117AD
1117-3.3
1117-adj
c 1117 adj
1117 L
1117-12
1117aDJ
1117-18
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