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    TO236 FOOTPRINT Search Results

    TO236 FOOTPRINT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R5F513T5ADFJ#30 Renesas Electronics Corporation 32-bit Microcontrollers for Single Motor control Applications; Reduces Footprint and BOM Costs Visit Renesas Electronics Corporation
    R5F513T5ADNE#20 Renesas Electronics Corporation 32-bit Microcontrollers for Single Motor control Applications; Reduces Footprint and BOM Costs Visit Renesas Electronics Corporation
    R5F513T3ADFL#10 Renesas Electronics Corporation 32-bit Microcontrollers for Single Motor control Applications; Reduces Footprint and BOM Costs Visit Renesas Electronics Corporation
    R5F513T3ADFL#30 Renesas Electronics Corporation 32-bit Microcontrollers for Single Motor control Applications; Reduces Footprint and BOM Costs Visit Renesas Electronics Corporation
    R5F513T5AGNH#20 Renesas Electronics Corporation 32-bit Microcontrollers for Single Motor control Applications; Reduces Footprint and BOM Costs Visit Renesas Electronics Corporation

    TO236 FOOTPRINT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    code marking 6z sot-23

    Abstract: TO236 footprint Power MOSFET N-Channel sot-23 6Z SOT23 sot-23 MARKING CODE 6Z marking "td" sot23 marking 6Z SOT23 TO-236 footprint MMBF170LT1 MMBF170LT3G
    Text: MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features •ăPb-Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage - Continuous


    Original     		MMBF170LT1 OT-23 MMBF170LT1/D code marking 6z sot-23 TO236 footprint Power MOSFET N-Channel sot-23 6Z SOT23 sot-23 MARKING CODE 6Z marking "td" sot23 marking 6Z SOT23 TO-236 footprint MMBF170LT1 MMBF170LT3G PDF

    code marking 6z sot-23

    Abstract: marking 6Z SOT23 MMBF170LT1G TO236 footprint MMBF170LT1 MMBF170LT3 MMBF170LT3G MOSFET N SOT-23 sot-23 MARKING CODE 6Z marking CODE 6z
    Text: MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features http://onsemi.com •ăPb-Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage


    Original     		MMBF170LT1 OT-23 MMBF170LT1/D code marking 6z sot-23 marking 6Z SOT23 MMBF170LT1G TO236 footprint MMBF170LT1 MMBF170LT3 MMBF170LT3G MOSFET N SOT-23 sot-23 MARKING CODE 6Z marking CODE 6z PDF

    code marking 6z sot-23

    Abstract: diode 6z sot-23 TO-236-3 TO236 footprint Power MOSFET N-Channel sot-23 marking 6Z MOSFET SOT-23 sot-23 MARKING CODE 6Z to-236 MARKING QG 6 PIN
    Text: MMBF170LT1 Power MOSFET 500 mA, 60 V N-Channel SOT-23 Features http://onsemi.com •ăPb-Free Packages are Available 500 mA, 60 V RDS on = 5 W MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 60 Vdc Drain-Gate Voltage VDGS 60 Vdc Gate-Source Voltage


    Original     		MMBF170LT1 OT-23 MMBF170LT1/D code marking 6z sot-23 diode 6z sot-23 TO-236-3 TO236 footprint Power MOSFET N-Channel sot-23 marking 6Z MOSFET SOT-23 sot-23 MARKING CODE 6Z to-236 MARKING QG 6 PIN PDF

    diode marking 7L SOT23

    Abstract: PBRN113ZK 43a sot23 marking 43A sot23 marking code 10 sot23 SC-43A SC-59A PBRN113ZS PBRN113ZT
    Text: PBRN113Z series NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 26 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.


    Original     		PBRN113Z PBRN113ZK OT346 SC-59A O-236 PBRN113ZS SC-43A PBRN113ZT O-236AB OT54A diode marking 7L SOT23 PBRN113ZK 43a sot23 marking 43A sot23 marking code 10 sot23 SC-43A SC-59A PBRN113ZT PDF

    43a sot23

    Abstract: PBRN113EK PBRN113ES PBRN113ET SC-43A SC-59A
    Text: PBRN113E series NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 — 1 March 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.


    Original     		PBRN113E PBRN113EK OT346 SC-59A O-236 PBRN113ES SC-43A PBRN113ET O-236AB OT54A 43a sot23 PBRN113EK PBRN113ET SC-43A SC-59A PDF

    MARKING CODE G7 NPN SOT23

    Abstract: MARKING G7 NPN SOT23 marking 41 sot23 nxp
    Text: PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.


    Original     		PBRN123Y PBRN123YK PBRN123YS PBRN123YT SC-59A SC-43A O-236 O-236AB OT346 OT54A MARKING CODE G7 NPN SOT23 MARKING G7 NPN SOT23 marking 41 sot23 nxp PDF

    43a sot23

    Abstract: PBRN123EK PBRN123ES PBRN123ET SC-43A SC-59A
    Text: PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.


    Original     		PBRN123E PBRN123EK OT346 SC-59A O-236 PBRN123ES SC-43A PBRN123ET O-236AB OT54A 43a sot23 PBRN123EK PBRN123ET SC-43A SC-59A PDF

    TO236 footprint

    Abstract: 43a sot23 marking code 10 sot23 PBRN123YK PBRN123YS PBRN123YT SC-43A SC-59A
    Text: PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal BISS Resistor-Equipped Transistors (RET) family in small plastic packages.


    Original     		PBRN123Y PBRN123YK OT346 SC-59A O-236 PBRN123YS SC-43A PBRN123YT O-236AB OT54A TO236 footprint 43a sot23 marking code 10 sot23 PBRN123YK PBRN123YT SC-43A SC-59A PDF

    MMBZ5221ELT1

    Abstract: No abstract text available
    Text: MMBZ5221ELT1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well


    Original     		MMBZ5221ELT1 OT-23 MMSZ5221ET1/D MMBZ5221BLT1/D MMBZ5252BL PDF

    PMEG2010AEK

    Abstract: SC-59A TO236 footprint
    Text: PMEG2010AEK 1 A very low VF MEGA Schottky barrier rectifier Rev. 01 — 30 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOT346 (SC-59A/TO-236)


    Original     		PMEG2010AEK OT346 SC-59A/TO-236) PMEG2010AEK SC-59A TO236 footprint PDF

    MMBT3904LT1G

    Abstract: MMBT3904LT3G 1N916 MMBT3904LT1 MMBT3904LT3 sot-23 Marking 1am sot 23 marking code 1AM SOA SOT23
    Text: MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features •ăPb-Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collectorā-āEmitter Voltage VCEO 40 Vdc Collectorā-āBase Voltage VCBO 60 Vdc Emitterā-āBase Voltage


    Original     		MMBT3904LT1 MMBT3904LT1G MMBT3904LT3G 1N916 MMBT3904LT1 MMBT3904LT3 sot-23 Marking 1am sot 23 marking code 1AM SOA SOT23 PDF

    6W MARKING CODE SOT23

    Abstract: MMBFJ175LT1 MMBFJ175LT1G 6w sot23
    Text: MMBFJ175LT1 Preferred Device JFET Chopper P-Channel - Depletion Features •ăPb-Free Package is Available http://onsemi.com 2 SOURCE MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Symbol Value Unit VDG 25 V VGS r -25 V Symbol Max Unit


    Original     		MMBFJ175LT1 OT-23 O-236) MMBFJ175LT1/D 6W MARKING CODE SOT23 MMBFJ175LT1 MMBFJ175LT1G 6w sot23 PDF

    MMBTA42LT1G

    Abstract: 1D SOT 23-6 MMBTA42 MMBTA42LT1 MMBTA42LT3 MMBTA42LT3G MMBTA43 MMBTA43LT1 MMBTA43LT1G MMBTA42LT
    Text: MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 is a Preferred Device High Voltage Transistors NPN Silicon Features •ăPb-Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Characteristic Symbol Collectorā-āEmitter Voltage Value Unit VCEO MMBTA42 MMBTA43


    Original     		MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 MMBTA42 MMBTA43 MMBTA42LT1G 1D SOT 23-6 MMBTA42 MMBTA42LT3 MMBTA42LT3G MMBTA43 MMBTA43LT1 MMBTA43LT1G MMBTA42LT PDF

    AO3460

    Abstract: AO3460L 065A
    Text: AO3460 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3460/L uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide


    Original     		AO3460 AO3460/L OT-23 AO3460 AO3460L -AO3460L O-236 OT-23) 065A PDF

    TO236 footprint

    Abstract: TO-236-AA
    Text: Power Packages SOT-23 TO-236AA SMALL OUTLINE TRANSISTOR INCHES D A b TYP E A1 E1 c L e CL e 1 MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.031 0.050 0.80 1.27 - A1 0.004 0.010 0.10 0.25 - b 0.015 0.020 0.37 0.51 - c 0.0035 0.0059 0.089 0.150 - D 0.110 0.120


    Original     		OT-23 O-236AA) O-236 TO236 footprint TO-236-AA PDF

    S1217

    Abstract: TO-92-18RM
    Text: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 


    Original     		TN2404K/TN2404KL/BS107KL TN2404K TN2404K, BS107KL O-92-18RM O-226AA O-236 OT-23) 2011/65/EU 2002/95/EC. S1217 TO-92-18RM PDF

    Untitled

    Abstract: No abstract text available
    Text: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 


    Original     		TN2404K/TN2404KL/BS107KL TN2404K TN2404K, BS107KL O-226AA O-92-18RM TN2404KL 2404KL 2002/95/EC. PDF

    MMBTA42LT1G

    Abstract: MMBTA42 MMBTA42LT1 MMBTA42LT3 MMBTA42LT3G MMBTA43 MMBTA43LT1
    Text: MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Characteristic Symbol Collectorā-āEmitter Voltage Value Unit VCEO


    Original     		MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 MMBTA42 MMBTA43 MMBTA42LT1/D MMBTA42LT1G MMBTA42 MMBTA42LT3 MMBTA42LT3G MMBTA43 MMBTA43LT1 PDF

    NSS12201LT1G

    Abstract: HIGH SPEED SWITCHING NPN SOT23
    Text: NSS12201LT1G 12 V, 4.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS12201LT1G NSS12201L/D NSS12201LT1G HIGH SPEED SWITCHING NPN SOT23 PDF

    marking VL

    Abstract: NSS1C200LT1G
    Text: NSS1C200LT1G 100 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS1C200LT1G NSS1C200L/D marking VL NSS1C200LT1G PDF

    NSS40201LT1G

    Abstract: HIGH SPEED SWITCHING NPN SOT23 marking VB
    Text: NSS40201LT1G 40 V, 4.0 A, Low VCE sat NPN Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS40201LT1G NSS40201L/D NSS40201LT1G HIGH SPEED SWITCHING NPN SOT23 marking VB PDF

    MMBTA42

    Abstract: MMBTA42LT1 MMBTA43 MMBTA43LT1 MMBTA43LT3
    Text: MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 is a Preferred Device High Voltage Transistors NPN Silicon MAXIMUM RATINGS Rating http://onsemi.com Symbol MMBTA42 MMBTA43 Unit Collector - Emitter Voltage VCEO 300 200 Vdc Collector - Base Voltage VCBO 300 200 Vdc Emitter - Base Voltage


    Original     		MMBTA42LT1, MMBTA43LT1 MMBTA42LT1 MMBTA42 MMBTA43 r14525 MMBTA42LT1/D MMBTA42 MMBTA43 MMBTA43LT1 MMBTA43LT3 PDF

    NSS60201LT1G

    Abstract: No abstract text available
    Text: NSS60201LT1G 60 V, 4.0 A, Low VCE sat NPN Transistor ON Semiconductor's e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications


    Original     		NSS60201LT1G NSS60201L/D NSS60201LT1G PDF

    On semiconductor date Code sot-23

    Abstract: IC data book free download sot-23 body marking A 4 TO-236 sot-23 Marking G1 Tape and Reel Packaging Specifications Code sot-23 on semiconductor 1N914 transistor data sheet free download G1 SOT-23 marking codes transistors a1 sot-23
    Text: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Value VCEO MMBT5550 MMBT5551 Collectorā-āBase Voltage


    Original     		MMBT5550LT1, MMBT5551LT1 MMBT5550 MMBT5551 MMBT5550LT1/D On semiconductor date Code sot-23 IC data book free download sot-23 body marking A 4 TO-236 sot-23 Marking G1 Tape and Reel Packaging Specifications Code sot-23 on semiconductor 1N914 transistor data sheet free download G1 SOT-23 marking codes transistors a1 sot-23 PDF