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    TO220AB PACKAGE Search Results

    TO220AB PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TO220AB PACKAGE Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TO-220AB Package International Rectifier Case Outline and Dimensions Original PDF
    TO-220AB Package International Rectifier Case Outline and Dimensions & Part Marking Information Original PDF
    TO-220AB Package International Rectifier Case Outline and Dimensions Original PDF
    TO-220AB Package Intersil 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE Original PDF
    TO-220AB Package Intersil 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE Original PDF
    TO220AB Package Unknown PACKAGE MECHANICAL DATA Original PDF
    TO-220AB Package Siemens Package Outlines Original PDF

    TO220AB PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUT11APX equivalent

    Abstract: BUT11A1 equivalent BU2725DX BU2527 BU506D, BU1506DX, BU2506DF BUT11APX BU4522AX BU2506DF equivalent bu2520dx BU2527DX
    Text: DISCRETE SEMICONDUCTORS Selection guide Power Bipolar Transistors 1998 Dec 16 SOT82 SOT78 TO220AB SOT186 BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF SOT186A (isolated TO220AB) SOT199 SOT399 (TOP3D) SOT429 (TO247) SOT430 (TOP3L) TYPICAL APPLICATIONS


    Original     		PDF O220AB) OT186 BU505 BU505D OT199 OT399 OT429 OT430 BU505F BU505DF BUT11APX equivalent BUT11A1 equivalent BU2725DX BU2527 BU506D, BU1506DX, BU2506DF BUT11APX BU4522AX BU2506DF equivalent bu2520dx BU2527DX

    Untitled

    Abstract: No abstract text available
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:


    Original     		PDF NTE236 27MHz, O220AB NTE236 O220AB 27MHz

    transistor BT136

    Abstract: TRANSISTOR bt134 BUJ100 phe13009 transistor BT137 transistor bt136 600e BT134 bt134 transistor BYV42E-200 SOT404
    Text: Power Diodes Ultrafast, Enhanced Ultrafast and Hyperfast Diodes for active power factor correction VRRM V IF(AV) (A) VF (typ) @ 150 °C (V) @ IF (A) t rr (typ) @ 25 °C (ns) SOD59 (TO220AC) SOD113 (2-pin SOT186A) SOT78 (TO220AB) SOT186A (isolated TO220AB)


    Original     		PDF O220AC) OD113 OT186A) O220AB) OT186A OT226 OT404 OT428 BYV29-500 transistor BT136 TRANSISTOR bt134 BUJ100 phe13009 transistor BT137 transistor bt136 600e BT134 bt134 transistor BYV42E-200 SOT404

    SMBJ11CA

    Abstract: SMBJ15A 13/Altium SBR10200CT SBL2035CT SBR30A50CT SMBJ130A SMBJ130CA SMBJ17A SMBJ14CA
    Text: DATE: 11th March, 2011 PCN #: 2034 REV 01 on 4th August, 2011 PCN Title: Qualification of Additional Assembly and Test Site for Select SMA, SMB, SMC, and TO220AB Packaged Devices


    Original     		PDF O220AB R20U40CT SBR20U60CT SBR20U100CT SBR20U150CT SBR3040CT SBR3045CT SBR3045SCT SBR3060CT SBR30100CT SMBJ11CA SMBJ15A 13/Altium SBR10200CT SBL2035CT SBR30A50CT SMBJ130A SMBJ130CA SMBJ17A SMBJ14CA

    BTB04-600SAP

    Abstract: S0817MH S1217NH BTA12-700BW BTB04 600SAP BTB04-600SAP equivalent BTB06-700SW btb04600sap s1217mh BTA06-400GP
    Text: Thyristors 4-Quadrant Triacs - continued 4-Quadrant Triacs - continued Thyristors ST Microelectronics Cross Reference Guide Silicon Controlled Rectifiers SCRs - continued VDRM (V) IGT (mA) Package ST Part NXP Part 800 35/35/35/70 SOT78 / TO220AB Z0109NN


    Original     		PDF O220AB Z0109NN Z0109SA BT131-800E Z0109NA Z0109SN BTB04-600SAP S0817MH S1217NH BTA12-700BW BTB04 600SAP BTB04-600SAP equivalent BTB06-700SW btb04600sap s1217mh BTA06-400GP

    F1S30P06

    Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334
    Text: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM


    Original     		PDF RFG30 RFP30P RF1S30 P06SM) O220AB, O262AA, O263AB) RFG30P06, RFP30P06, F1S30P06 RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334

    BUK456-60H

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. PINNING - TO220AB


    Original     		PDF O220AB BUK456-60H BUK456-60H

    S12M15-600B

    Abstract: S12M15600B
    Text: LITE-ON SEMICONDUCTOR S12M15600B SCRs 12 AMPERES RMS 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package


    Original     		PDF S12M15600B O-220AB O220AB O-220AB S12M15-600B S12M15600B

    AN7254

    Abstract: AN7260 RFP2N12 RFP2N15 TB334
    Text: [ /Title RFP2N 12, RFP2N1 5 /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark RFP2N12, RFP2N15 Semiconductor 2A, 120V and 150V, 1.750 Ohm,


    Original     		PDF O220AB) RFP2N12, RFP2N15 AN7254 AN7260 RFP2N12 RFP2N15 TB334

    BUK95150-55A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK95150-55A BUK96150-55A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using


    Original     		PDF BUK95150-55A BUK96150-55A O220AB OT404 O220AB BUK95150-55A

    BUK7514-55A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which


    Original     		PDF O220AB OT404 BUK7514-55A BUK7614-55A O220AB BUK7514-55A

    BUK9540-100A

    Abstract: BUK9640-100A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9540-100A BUK9640-100A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using


    Original     		PDF BUK9540-100A BUK9640-100A O220AB OT404 O220AB BUK9540-100A BUK9640-100A

    5n06

    Abstract: F1S25N06 302 s1b diode
    Text: RFP25N06, RF1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB


    Original     		PDF RFP25N06, RF1S25N06SM 5N06S O220AB O263AB 5n06 F1S25N06 302 s1b diode

    TRANSISTOR BUK9508

    Abstract: BUK9508-55A BUK9608-55A transistor smd 412 BE
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK9508-55A BUK9608-55A O220AB TRANSISTOR BUK9508 BUK9508-55A BUK9608-55A transistor smd 412 BE

    BUK9535-55A

    Abstract: transistor smd 26 BUK953555A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK9535-55A BUK9635-55A O220AB BUK9535-55A transistor smd 26 BUK953555A

    smd transistor 2314

    Abstract: tr/smd transistor 2314
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features


    Original     		PDF O220AB OT404 BUK9516-55A BUK9616-55A O220AB smd transistor 2314 tr/smd transistor 2314

    Diode Mark N10

    Abstract: RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334
    Text: [ /Title RFM18 N08, RFM18 N10, RFP18N 08, RFP18N 10 /Subject (18A, 80V and 100V, 0.1 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN FO pdfmark RFM18N08, RFM18N10, RFP18N08, RFP18N10


    Original     		PDF RFM18 RFP18N O204AA, O220AB) RFM18N08, RFM18N10, RFP18N08, RFP18N10 Diode Mark N10 RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334

    S12M15-600B

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package


    Original     		PDF S12M15-B O-220AB O220AB O-220AB S12M15-600B

    TN22-1600D

    Abstract: triac sot23 IGNITION WITH SCR P0130AL triac 1200 triac scr circuit ICC01-400B5 electric fence sot82 sot194
    Text: SCR & TRIAC ASDTM : Application Specific Discretes TO220AB SWITCH MODE POWER SUPPLY ASDs Tj max = 110 °C except AVS08CB: 125 °C IT(RMS) +-VDRM ITSM Type IDRM @ VDRM @ Tj max AVS kit Suffix VTM @ ITM Comments Package max max (V) (A) (V) (A) (mA) AVS08 5


    Original     		PDF O220AB AVS08CB: AVS08 AVS08CB AVS1BCP08 AVS10CB AVS2ACP08 AVS12CB TN22-1600D triac sot23 IGNITION WITH SCR P0130AL triac 1200 triac scr circuit ICC01-400B5 electric fence sot82 sot194

    IRF540G

    Abstract: Application Note of IRF540 IRF540 T1 IRF540 RF1S540SM RF1S540SM9A
    Text: IRF540, RF1S540SM Data Sheet 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs [ /Title IRF54 0, RF1S5 40SM /Subject (28A, 100V, 0.077 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB ) /Creator ()


    Original     		PDF IRF540, RF1S540SM IRF54 O220AB O263AB IRF540G Application Note of IRF540 IRF540 T1 IRF540 RF1S540SM RF1S540SM9A

    BUK9528-100A

    Abstract: BUK9628-100A
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9528-100A BUK9628-100A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using


    Original     		PDF BUK9528-100A BUK9628-100A O220AB OT404 O220AB BUK9528-100A BUK9628-100A

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package


    Original     		PDF S12M15-B O-220AB O220AB O-220AB 40rent

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 800 VOLTS Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES B Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package


    Original     		PDF S12M15-B O-220AB O220AB O-220AB

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package


    Original     		PDF S12M15-B O-220AB O220AB