NTE191
Abstract: NTE240
Text: NTE191 NPN & NTE240 (PNP) Silicon Complementary Transistors High Voltage Video Amplifier Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers.
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NTE191
NTE240
O202N
100MHz,
NTE240)
NTE191
NTE240
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NTE322
Abstract: 27mhz rf amplifier NPN transistor choke 380
Text: NTE322 Silicon NPN Transistor RF Power Output Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen–Band and other high–frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up–modulation in AM circuits.
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NTE322
NTE322
O202N
30MHz.
500mA
27MHz
180pF
65/3B
27mhz rf amplifier NPN transistor
choke 380
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NTE188
Abstract: NTE189
Text: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.
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NTE188
NTE189
O202N
100MHz,
100MHz
NTE188
NTE189
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ic 10w power amplifier
Abstract: npn general purpose high voltage amplifier NTE189 NTE188
Text: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.
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NTE188
NTE189
O202N
100MHz,
100MHz
ic 10w power amplifier
npn general purpose high voltage amplifier
NTE189
NTE188
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NTE190
Abstract: No abstract text available
Text: NTE190 Silicon NPN Transistor High Voltage Amplifier Description: The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators. Features: D High Collector–Emitter Breakdown Voltage: V BR CEO = 180V (Min) @ IC = 1mA
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NTE190
NTE190
O202N
200mA
200mA,
20MHz
100kHz
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Untitled
Abstract: No abstract text available
Text: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.
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NTE188
NTE189
O202N
100MHz
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NTE188
Abstract: NTE189
Text: NTE188 NPN & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications.
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NTE188
NTE189
O202N
100MHz,
100MHz
NTE188
NTE189
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TO202N
Abstract: NTE272 NTE273 ic 555 audio amplifiers
Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.
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NTE272
NTE273
200mA
500mA
NTE273
O202N
TO202N
NTE272
ic 555 audio amplifiers
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Complementary Darlington Audio Power Amplifier
Abstract: PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 NTE273 application note ic 555
Text: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.
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NTE272
NTE273
200mA
500mA
NTE273
O202N
Complementary Darlington Audio Power Amplifier
PNP Monolithic Transistor Pair
ic 555 audio amplifiers
npn darlington transistor 150 watts
darlington complementary power amplifier
NTE272
application note ic 555
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NTE74HC4067
Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
Text: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B
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NTE40175B
NTE4017B
NTE40182B
NTE4018B
NTE4001B
NTE4019B
NTE4001BT
NTE40192B
NTE4002B
NTE40193B
NTE74HC4067
NTE4097B
NTE74HC299
NTE4017B
NTE4007
NTE4023B
NTE4027B
NTE74HC4053
NTE4553B
NTE74HC165
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123AP
Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge
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123AP
NTE159)
NTE396)
NTE375)
NTE159
NTE123AP
NTE290A
935-6072
NTE184
NTE199
NTE128
NTE293
NTE130
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ECG189
Abstract: ECG181 ECG162 ECG164 ECG186A ECG179 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG180 ECG172A ECG188
Text: Transistors cont'd E C G Type D escrip tio n and A pplicatio n (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To B a se V o lts Collector To Em itter V olts B a se to Em itter V o lts b v CBO b v CEO bvebo M ax. D e v ice D iss. P p W atts
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ECG162
ECG163A
ECG164
ECG165
ECG171
BC6296)
O-202
ECG172A
O-92HS
ECG192A
ECG189
ECG181
ECG186A
ECG179
# Frequency at which common emitter current gain is 70.0 of low frequency gain
ECG180
ECG188
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ECG184
Abstract: ECG181 ECG172A Philips ECG179 ECG182 ECG163A ECG165 ECG185 ECG183 ECG187
Text: PHILIPS E C G INC S4E D Transistors cont'd ECG Type Description and Application • bbS3*12a 0QQ71SG 307 H E C G (Maximum Ratings a t T c = 25°C Unless Otherwise Noted) Collector To Base Volts B Vc b o Collector To Emitter Volts b v Ceo Base to Em itter
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0QQ71SG
ECG162
ECG163A
ECG164
ECG165
ECG171
ECG296)
O-202
ECG192
ECG193)
ECG184
ECG181
ECG172A
Philips ECG179
ECG182
ECG185
ECG183
ECG187
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ECG280
Abstract: ECG284 ECG287 darlington pair transistor Darlington npn 2 amp ECG288 ECG TO-220 ECG263 ECG266 ECG285
Text: P H I L I P S E C G INC S4E D Transistors cont'd ECG Type Description and Application • t.bS3T5fi 0 0 0 7 1 5 3 Dit. H E C G (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts
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ECG260
ECG259)
O-127
ECG261
ECG262)
O-220
ECG262
ECG261)
ECG263
ECG280
ECG284
ECG287
darlington pair transistor
Darlington npn 2 amp
ECG288
ECG TO-220
ECG266
ECG285
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ECG130
Abstract: ECG222 ECG216 ECG196 ECG197 ECG210 ECG198 ECG192A ECG193A ECG194
Text: Transistors cont'd ECG193A ECG194 ECG195A ECG196 C ollector To Base Volts BV c b O Description and Application ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) 70 (Compl to ECG192A) MPN-Si, Gen Purp HV Amp, 180 Hi Speed Sw NPN-Si, RF Pwr Amp/Driver 70
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ECG193A
ECG192A)
T-16HS
ECG194
ECG195A
ECG196
ECG197)
O-220
O-39F
ECG225
ECG130
ECG222
ECG216
ECG197
ECG210
ECG198
ECG192A
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ECG188
Abstract: ECG184 TO202N ECG172A transistor pnp ecg 182 ECG162 ECG176 ECG164 ECG175 ECG187A
Text: Transistors cont'd ECG Type ECG162 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Description and Application Collector To Emitter Volts b v CEO b v CBO Base to Emitter Volts b v EBO Max. Collector Current lc Amps Max. Device
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ECG162
ECG163A
ECG164
ECG165
ECG171
O-202
ECG172A
ECG192A
ECG193A)
T-16HS
ECG188
ECG184
TO202N
transistor pnp ecg 182
ECG176
ECG175
ECG187A
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nte183
Abstract: No abstract text available
Text: Maximum Breakdown Voltage Maximum Collector Current Amps Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHZ) NTE Type Number Polarity
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O202N
NTE240)
T092HS
NTE193A)
NTE192)
nte183
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