diode BB102
Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003G
diode BB102
RF TRANSISTOR 10GHZ low noise
Tv tuner Diagram LG RF
VCO 9GHZ 10GHZ
Transistor GaAs FET Low Noise NF 1.6dB
2SC4784F
ultra high frequency FETs or transistors
A08 smd transistor
lg tv electronic diagram
SMD TRANSISTOR fet
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Hitachi DSA00164
Abstract: No abstract text available
Text: 2SC5025 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 2SC5025 Absolute Maximum Ratings Ta = 25°C
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2SC5025
O-126FM
D-85622
Hitachi DSA00164
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Hitachi DSA00164
Abstract: No abstract text available
Text: 2SC5120 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 500 MHz typ • High voltage and low output capacitance VCEO = 150 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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2SC5120
O-126FM
D-85622
Hitachi DSA00164
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2SD1609
Abstract: 2SD1610 2SD2491 2SD2492 TO-126-F Hitachi DSA00397
Text: 2SD2491, 2SD2492 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Features • Isolated package TO-126FM Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 2SD2491, 2SD2492 Absolute Maximum Ratings Ta = 25°C Ratings Item Symbol
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2SD2491,
2SD2492
O-126FM
2SD2491
2SD1609
2SD1610
2SD2491
2SD2492
TO-126-F
Hitachi DSA00397
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IC51-128
Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
Text: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials
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3SK238
Abstract: g1 smd transistor small signal audio FET BB303 smd transistor g1 SMD Transistor 070 R hitachi all fet audio application hitachi DISCRETE DUAL fet dual transistor 6 pin SMD 327 Hitachi 2SJ
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,
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ADE-A08-003E
3SK238
g1 smd transistor
small signal audio FET
BB303
smd transistor g1
SMD Transistor 070 R
hitachi all fet audio application
hitachi DISCRETE DUAL fet
dual transistor 6 pin SMD 327
Hitachi 2SJ
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HITACHI SMD TRANSISTORS
Abstract: small signal audio FET hitachi small signal Tv tuner Diagram LG RF nf transistor array g1 smd TRANSISTOR BB304 3SK238 BB405 equivalent smd 015
Text: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products August, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi ′s or any third party ′s patent, copyright,
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ADE-A08-003E
HITACHI SMD TRANSISTORS
small signal audio FET
hitachi small signal
Tv tuner Diagram LG RF
nf transistor array
g1 smd TRANSISTOR
BB304
3SK238
BB405 equivalent
smd 015
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2SC4828
Abstract: No abstract text available
Text: 2SC4828 Silicon NPN Triple Diffused High Voltage Amplifier, TV Video Output Absolute Maximum Ratings Ta = 25°C Item TO-126FM Symbol Rating Unit ————————————————————– Collector to base voltage VCBO 300 V ————————————————————–
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2SC4828
O-126FM
2SC4828
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HT 1200-4
Abstract: YAMAICHI ic234 PT740 AB TSSOP YAMAICHI SOCKET FP-20-0.65-01 IC51-1444-1354-7 PT817 Enplas drawings IC51-2084-1052-11 IC 7418 IC51-0242-1341
Text: Hitachi Semiconductor Package Data Book ADE–410–001B 3rd Edition March/97 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher functional
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March/97
HT 1200-4
YAMAICHI ic234
PT740 AB
TSSOP YAMAICHI SOCKET FP-20-0.65-01
IC51-1444-1354-7
PT817
Enplas drawings
IC51-2084-1052-11
IC 7418
IC51-0242-1341
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HT 1200-4
Abstract: IC51-2084-1052-11 IC51-0242-1341 YAMAICHI ic234 transistor fpq 630 IC51-0404-1511 fpq-144-0.5-03 648-0482211-A01 IC189 Series Open Top SOP, SSOP, TSOP Type I a HLQFP 176 Package drawing
Text: Hitachi Semiconductor Package Data Book ADE–410–001C 4th Edition March/98 Semiconductor & Integrated Circuit Devision, Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher
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March/98
intern844-347360
HT 1200-4
IC51-2084-1052-11
IC51-0242-1341
YAMAICHI ic234
transistor fpq 630
IC51-0404-1511
fpq-144-0.5-03
648-0482211-A01
IC189 Series Open Top SOP, SSOP, TSOP Type I a
HLQFP 176 Package drawing
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2sc5024
Abstract: Hitachi 2SA Hitachi DSA00164
Text: 2SC5024 Silicon NPN Epitaxial Application High frequency amplifier Features • • • • Excellent high frequency characteristics fT = 300 MHz typ High breakdown voltage and low output capacitance VCEO = 200 V, Cob = 5.0 pF typ Suitable for wide band video amplifier
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2SC5024
2SA1889
O-126FM
D-85622
2sc5024
Hitachi 2SA
Hitachi DSA00164
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Hitachi DSA00164
Abstract: No abstract text available
Text: 2SC5023 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 1000 MHz typ • High breakdown voltage and low output capacitance VCEO = 100 V, Cob = 4.5 pF typ • Suitable for wide band video amplifier
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2SC5023
O-126FM
D-85622
Hitachi DSA00164
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Hitachi DSA00164
Abstract: No abstract text available
Text: 2SC4828 Silicon NPN Triple Diffused Application High voltage amplifier, TV Video output Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage
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2SC4828
O-126FM
D-85622
Hitachi DSA00164
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PT740 AB
Abstract: PM351 transistor 9726 126 EDR-7313 ED-7402 texas instruments data guide manual Hitachi DSAUTAZ006 DO-35 land pattern Silicon Point Contact Mixer Diodes ED-7311
Text: Hitachi Semiconductor Package Data Book ADE–410–001H 9th Edition March/2001 Semiconductor & Integrated Circuits Hitachi, Ltd. Introduction Thank you for using Hitachi’s semiconductor devices. The growing market for electronic equipment requires mounting semiconductor devices with higher
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March/2001
standard-856-8650
PT740 AB
PM351
transistor 9726 126
EDR-7313
ED-7402
texas instruments data guide manual
Hitachi DSAUTAZ006
DO-35 land pattern
Silicon Point Contact Mixer Diodes
ED-7311
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Untitled
Abstract: No abstract text available
Text: H ITACH I 2SC5390 Silicon NPN Epitaxial High Frequency Amplifier HITACHI Features • Excellent high frequency characteristics fT = 1.4GHz typ. • Low output capacitance Cob = 2.4 pF (typ.) • Isolated package TO-126FM Outline TO-126FM I 1. Emitter 2. Collector
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2SC5390
ADE-208-492
O-126FM
126FM
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Untitled
Abstract: No abstract text available
Text: HITACHI 2SC4828-Silicon NPN Triple Diffused High Voltage Amplifier, TV Video Output Absolute Maximum Ratings Ta = 25 °C Item TO-126FM Symbol Rating Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage
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2SC4828--------------Silicon
O-126FM
2SC4828
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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Untitled
Abstract: No abstract text available
Text: 2SD2491, 2SD2492 Silicon NPN Epitaxial HITACHI Application Low frequency high voltage amplifier Features • Isolated package TO-126FM Outline 2SD2491, 2SD2492 Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SD2491 2SD2492 Unit Collector to base voltage
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2SD2491,
2SD2492
O-126FM
2SD2491
2SD2491
2SD2492
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2SK1778
Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp03
2SK1665
2SJ215
2SJ217
2SK1303
2SK1304
2SK1298
2SK1666
2SJ216
2SJ218
2SK1778
2SJ236
2sj177
pf0030 hitachi
2SJ299
2SK1919
2SJ175
2SJ176
2SJ182
2SJ237
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hitachi ha 250
Abstract: No abstract text available
Text: 2SC4828 Silicon NPN Triple Diffused HITACHI Application High voltage amplifier. TV Video output Outline TO-126FM 1 1 Emitter 2 Collector 3 Base i '3 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit C ollector to em itter voltage VCBQ VCEQ Emitter to base voltage
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2SC4828
O-126FM
hitachi ha 250
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Untitled
Abstract: No abstract text available
Text: I HITACHI 2SA1889 Silicon PNP Epitaxial Application TO-126FM High frequency amplifier Features f 'W • Excellent high frequency characteristics f j = 300 M Hz typ • High voltage and low output capacitance v ceo t = - 200 v > Cob = 5 0 pf typ 2 • Suitable for wide band video amplifier
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2SA1889
O-126FM
2SA1889B
2SA1889C
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5252 F 1108
Abstract: 4550J TO220FM 12015C 5252 F 1104 0345A msp18 E1113 K2613 SP1211
Text: B 2 S A series P 5 5 6 8 8 8 6 6 6 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6 9 5 5 5 5 5 5 5 5 5 6 5 5 8 8 8 6 P*c*^aeoda TO-92 TO-92 TO-92 TO-126M TO-126M TO-126M TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
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O-126M
12IFP-8DA
24Sfc
2025R
2026R
2027R
2029R
2031T
5252 F 1108
4550J
TO220FM
12015C
5252 F 1104
0345A
msp18
E1113
K2613
SP1211
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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O220F
SP-10
SP-12
SP-12TA
1560D
2sk1058 equivalent
MBM300BS6
Hitachi MOSFET
2SK1270
transistor 2sk 12
2sk1645
2SK975 equivalent
equivalent transistor 2sk
2SK1058 MOSFET APPLICATION NOTES
2SC297
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Untitled
Abstract: No abstract text available
Text: 2SA1889 Silicon PNP Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 300 MHz typ • High voltage and low output capacitance V CE0 = -2 0 0 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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2SA1889
2SC5024
O-126FM
2SA1889B
2SA1889C
2SA1810.
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