Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TO126B Search Results

    TO126B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc1846

    Abstract: 2SA0885
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C


    Original
    PDF 2002/95/EC) 2SC1846 2SA0885 O-126B-A1 2sc1846 2SA0885

    2SC4212

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4212 Silicon NPN triple diffusion planar type For color TV horizontal deflection driver Unit: mm 8.0+0.5 –0.1 3.2±0.2 M Di ain sc te on na tin nc ue e/ d • Features ■ Absolute Maximum Ratings Ta = 25°C


    Original
    PDF 2002/95/EC) 2SC4212 2SC4212

    2SD0946A

    Abstract: 2SD0946B
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD0946A, 2SD0946B Silicon NPN epitaxial planar type darlington For low-frequency amplification • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Absolute Maximum Ratings Ta = 25°C


    Original
    PDF 2002/95/EC) 2SD0946A, 2SD0946B 2SD0946A 2SD0946A 2SD0946B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original
    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SA0914

    Abstract: 2SC1953
    Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type Unit: mm For low-frequency power pre-amplification Complementary to 2SA0914 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 4.6±0.2 Symbol Rating Unit VCBO 150 V Collector to emitter voltage VCEO 150


    Original
    PDF 2SC1953 2SA0914 2SA0914, O-126B 2SA0914 2SC1953

    an6652

    Abstract: No abstract text available
    Text: UTC AN6652 LINEAR INTEGRATED CIRCUIT MOTOR CONTROL CIRCUIT DESCRIPTION The UTC AN6652 is an IC designed for the rotating speed control of a compact DC motor, which is used for a tape recorder, record player, etc. FEATURES *Small four-lead plastic package for compact motor.


    Original
    PDF AN6652 AN6652 O-126B QW-R109-011

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type For low-frequency high power driver Complementary to 2SA0794, 2SA0794A Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C


    Original
    PDF 2002/95/EC) 2SC1567, 2SC1567A 2SA0794, 2SA0794A 2SC1567 2SC1567A 2SC1567

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C


    Original
    PDF 2002/95/EC) 2SC2258 O-126B

    2SC1953

    Abstract: 3202 a ic
    Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type Unit: mm For low-frequency power pre-amplification Complementary to 2SA0914 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 4.6±0.2 Symbol Rating Unit VCBO 150 V Collector to emitter voltage VCEO 150


    Original
    PDF 2SC1953 2SA0914 2SA0914, O-126B 200MHz 2SC1953 3202 a ic

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C


    Original
    PDF 2002/95/EC) 2SC1846 2SA0885

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1640 Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency output amplification 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter


    Original
    PDF 2002/95/EC) 2SD1640

    2SC2497A

    Abstract: No abstract text available
    Text: Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SA1096 and 2SA1096A 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 • High collector to emitter voltage VCEO • TO-126B package which requires no insulation plate for installation to the heat sink


    Original
    PDF 2SC2497, 2SC2497A 2SA1096 2SA1096A O-126B 2SC2497 2SC2497A

    2Sc4212

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC4212 Silicon NPN triple diffusion planar type For color TV horizontal deflection driver Unit: mm 8.0+0.5 –0.1 • Features 3.2±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original
    PDF 2002/95/EC) 2SC4212 O-126B 2Sc4212

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1640 Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency output amplification 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter


    Original
    PDF 2002/95/EC) 2SD1640

    2SC3611

    Abstract: No abstract text available
    Text: Power Transistors 2SC3611 Silicon NPN epitaxial planar type Unit: mm For video amplifier 8.0+0.5 –0.1 3.2±0.2 3.05±0.1 3.8±0.3 1.9±0.1 • High transition frequency fT • Small collector output capacitance Cob • Wide current range • TO-126B package which requires no insulation plate for installation to the heat sink


    Original
    PDF 2SC3611 O-126B 100ms 2SC3611

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SA0885 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter 0.75±0.1 Symbol Rating Unit Collector to base voltage


    Original
    PDF 2SA0885 2SC1846 2SC1846 O-126B 200MHz

    AZ70XX

    Abstract: AM6651B AM6651BU AM6651BU-E1
    Text: Product Brief MOTOR VOLTAGE CONTROL DETECTOR CIRCUIT AM6651B AZ70XX Description Parametric Table The AM6651B is a monolithic integrated that with proAZ70XX series ICs are under voltagecircuit detectors vides motor speed control, reverse voltage protection,


    Original
    PDF AM6651B AZ70XX AM6651Bseriesmonolithic AZ70XX stableAZ70XX AM6651B O-126B OT-89-3 AM6651BU AM6651BU-E1

    2SA0900

    Abstract: 2SC1568 2SC156
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C


    Original
    PDF 2002/95/EC) 2SC1568 2SA0900 O-126B-A1 2SA0900 2SC1568 2SC156

    2SC2258

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C


    Original
    PDF 2002/95/EC) 2SC2258 O-126B-A1 2SC2258

    2SA0914

    Abstract: 2SA914 2SC1953
    Text: Power Transistors 2SA0914 2SA914 Silicon PNP epitaxial planar type Unit: mm 8.0+0.5 –0.1 For audio system/pli drive Complementary to 2SC1953 3.2±0.2 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)


    Original
    PDF 2SA0914 2SA914) 2SC1953 O-126B-A1 2SA0914 2SA914 2SC1953

    2SA0886

    Abstract: 2SA886 2SC1847
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 3.2±0.2


    Original
    PDF 2002/95/EC) 2SA0886 2SA886) 2SC1847 O-126B-A1 2SA0886 2SA886 2SC1847

    2SD2018

    Abstract: sick nt
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification Unit: mm 8.0+0.5 –0.1 M Di ain sc te on na tin nc ue e/ d 3.2±0.2 • Features Parameter


    Original
    PDF 2002/95/EC) 2SD2018 2SD2018 sick nt

    AN6651

    Abstract: dc motor tape recorder 14.4v motor speed control circuit
    Text: UNISONIC TECHNOLOGIES CO., LTD AN6651 LINEAR INTEGRATED CIRCUIT MOTOR SPEED CONTROL CIRCUIT „ DESCRIPTION The UTC AN6651 is a monolithic integrated circuit designed for the rotating control of a compact DC motor which is used for a tape recorder, recorder player etc.


    Original
    PDF AN6651 AN6651 AN6651L AN6651-T6B-K AN6651L-T6B-K O-126B QW-R109-003 dc motor tape recorder 14.4v motor speed control circuit

    2SD1640

    Abstract: No abstract text available
    Text: Power Transistors 2SD1640 Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency output amplification 3.2±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO 120


    Original
    PDF 2SD1640 2SD1640