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    TO-92 NPN BIPOLAR TRANSISTOR Search Results

    TO-92 NPN BIPOLAR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    TO-92 NPN BIPOLAR TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF422

    Abstract: bf420
    Text: BF420/BF422 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low feedback capacitance. NPN transistors in a TO-92 plastic package. PNP complements: BF421 and BF423 Class-B video output stages in colour television and professional monitor equipment.


    Original     		PDF BF420/BF422 BF421 BF423 BF420 -65to150 BF422

    2sc2216

    Abstract: No abstract text available
    Text: 2SC2216 NPN TO-92 Bipolar Transistors TO-92 1. BASE 2. EMITTER 3. COLLECTOR Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage


    Original     		PDF 2SC2216 30MHz

    bc237

    Abstract: BC237B bc238 bc237a bc237c bc239 238B 238c
    Text: BC237/238/239 NPN TO-92 Bipolar Transistors 1. COLLECTOR TO-92 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCEO VEBO Parameter Value BC237 45 BC238/239 25 Collector-Emitter Voltage


    Original     		PDF BC237/238/239 BC237 BC238/239 BC238 BC239 100MHz BC237B bc237a bc237c 238B 238c

    2n3904 npn

    Abstract: transistor 2n3906 NPN Silicon Epitaxial Planar Transistor to92 Bipolar Transistor npn sot23 2N3904 SOT-23 2N3906 TO92
    Text: 2N3904 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with


    Original     		PDF 2N3904 2N3906 OT-23 MMBT3904 100mA 100MHz 2n3904 npn transistor 2n3906 NPN Silicon Epitaxial Planar Transistor to92 Bipolar Transistor npn sot23 2N3904 SOT-23 2N3906 TO92

    BF423

    Abstract: BF421 TO92 LOW VCE PNP
    Text: BF421/BF423 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low feedback capacitance. PNP transistors in a TO-92 plastic package. NPN complements: BF420 and BF422 Class-B video output stages in colour television and professional monitor equipment.


    Original     		PDF BF421/BF423 BF420 BF422 BF421 -65to BF423 TO92 LOW VCE PNP

    2SC2551

    Abstract: No abstract text available
    Text: 2SC2551 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF 2SC2551 2SA1091 100uA,

    hFE-100

    Abstract: 2sc5344 IC Audio Power Amplifier Bipolar
    Text: 2SC5344 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio power amplifier application High hFE : hFE=100~320 Complementary to 2SA1981 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO VCEO


    Original     		PDF 2SC5344 2SA1981 100mA 500mA, hFE-100 IC Audio Power Amplifier Bipolar

    BC337

    Abstract: BC337 hfe bc338 BC-337 bc338-40 BC338-16 NPN bc338 BC33840
    Text: BC337/338 NPN TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage


    Original     		PDF BC337/338 BC337 BC338 BC337 hfe BC-337 bc338-40 BC338-16 NPN bc338 BC33840

    Untitled

    Abstract: No abstract text available
    Text: 2SC1959 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearlity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30


    Original     		PDF 2SC1959 400mA 100mA, 100mA 100mA

    Untitled

    Abstract: No abstract text available
    Text: 2N5551 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2N5551 600mA) 100MHz

    npn transistors 400V 1A To92

    Abstract: No abstract text available
    Text: 3DD13003B NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 1.25MAX 2.92 MIN power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Collector-Base Voltage VCBO VCEO Collector-Emitter Voltage


    Original     		PDF 3DD13003B 25MAX 100mA, npn transistors 400V 1A To92

    Untitled

    Abstract: No abstract text available
    Text: 2N5550 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160V) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2N5550 600mA) 100MHz

    2SD1991A

    Abstract: No abstract text available
    Text: 2SD1991A NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SD1991A 100mA 200MHz

    2SD879

    Abstract: germanium transistors NPN germanium npn 92
    Text: 2SD879 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster Than that of germanium transistors.


    Original     		PDF 2SD879 2SD879s 750mW) germanium transistors NPN germanium npn 92

    s9014

    Abstract: S9014 TO92 s9015
    Text: S9014 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


    Original     		PDF S9014 S9015 100mA, 30MHz S9014 TO92 s9015

    BC547

    Abstract: bc548 BC546 BC548 npn BC547 to92 transistors BC548 IC BC548 BC547 BC546 BC548 ,BC558 bc548 TO-92
    Text: BC546/BC547/BC548 NPN TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features High Voltage Complement to BC556,BC557,BC558 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Collector-Base Voltage VCBO Value BC546 BC547 BC548


    Original     		PDF BC546/BC547/BC548 BC556 BC557 BC558 BC546 BC547 BC548 BC548 npn BC547 to92 transistors BC548 IC BC548 BC547 BC546 BC548 ,BC558 bc548 TO-92

    Untitled

    Abstract: No abstract text available
    Text: 2N4401 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Value Units Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO


    Original     		PDF 2N4401 -55to 150mA 500mA 100MHz 100KHz 150mA,

    2SC388

    Abstract: No abstract text available
    Text: 2SC388 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features TV final pictureif amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage


    Original     		PDF 2SC388 45MHZ

    2sc1318

    Abstract: 2sc131
    Text: 2SC1318 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Collector output capacitance : Cob=11 pF (TYP),20 pF (MAX) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V


    Original     		PDF 2SC1318 500mA 300mA 200MHz 150mA 2sc131

    Untitled

    Abstract: No abstract text available
    Text: 2SC3279 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SC3279 100mA

    2SD1468

    Abstract: No abstract text available
    Text: 2SD1468 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low saturation voltage Ideal for low voltage, high current dribes High DC current gain and high current MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units


    Original     		PDF 2SD1468 100mA 500mA, 100MHz

    2sc2717

    Abstract: No abstract text available
    Text: 2SC2717 NPN TO-92 Bipolar Transistors TO-92 1. BASE 2. EMITTER 3. COLLECTOR Features High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SC2717 45MHZ) 30MHz 45MHz

    bc639

    Abstract: bc635 bc637 BC639 collector
    Text: BC635/637/639 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High current transistors Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Collector-Emitter Voltage VCBO Collector-Emitter Voltage


    Original     		PDF BC635/637/639 BC635 BC637 BC639 BC639 collector

    Untitled

    Abstract: No abstract text available
    Text: 2SD1616A NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO


    Original     		PDF 2SD1616A to150 PW350 100mA, 100mA 100mA