BF422
Abstract: bf420
Text: BF420/BF422 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low feedback capacitance. NPN transistors in a TO-92 plastic package. PNP complements: BF421 and BF423 Class-B video output stages in colour television and professional monitor equipment.
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BF420/BF422
BF421
BF423
BF420
-65to150
BF422
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2sc2216
Abstract: No abstract text available
Text: 2SC2216 NPN TO-92 Bipolar Transistors TO-92 1. BASE 2. EMITTER 3. COLLECTOR Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage
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2SC2216
30MHz
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bc237
Abstract: BC237B bc238 bc237a bc237c bc239 238B 238c
Text: BC237/238/239 NPN TO-92 Bipolar Transistors 1. COLLECTOR TO-92 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCEO VEBO Parameter Value BC237 45 BC238/239 25 Collector-Emitter Voltage
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BC237/238/239
BC237
BC238/239
BC238
BC239
100MHz
BC237B
bc237a
bc237c
238B
238c
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2n3904 npn
Abstract: transistor 2n3906 NPN Silicon Epitaxial Planar Transistor to92 Bipolar Transistor npn sot23 2N3904 SOT-23 2N3906 TO92
Text: 2N3904 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with
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2N3904
2N3906
OT-23
MMBT3904
100mA
100MHz
2n3904 npn
transistor 2n3906
NPN Silicon Epitaxial Planar Transistor to92
Bipolar Transistor npn sot23
2N3904 SOT-23
2N3906 TO92
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BF423
Abstract: BF421 TO92 LOW VCE PNP
Text: BF421/BF423 PNP TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low feedback capacitance. PNP transistors in a TO-92 plastic package. NPN complements: BF420 and BF422 Class-B video output stages in colour television and professional monitor equipment.
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BF421/BF423
BF420
BF422
BF421
-65to
BF423
TO92 LOW VCE PNP
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2SC2551
Abstract: No abstract text available
Text: 2SC2551 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units
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2SC2551
2SA1091
100uA,
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hFE-100
Abstract: 2sc5344 IC Audio Power Amplifier Bipolar
Text: 2SC5344 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio power amplifier application High hFE : hFE=100~320 Complementary to 2SA1981 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO VCEO
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2SC5344
2SA1981
100mA
500mA,
hFE-100
IC Audio Power Amplifier Bipolar
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BC337
Abstract: BC337 hfe bc338 BC-337 bc338-40 BC338-16 NPN bc338 BC33840
Text: BC337/338 NPN TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage
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BC337/338
BC337
BC338
BC337 hfe
BC-337
bc338-40
BC338-16
NPN bc338
BC33840
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Untitled
Abstract: No abstract text available
Text: 2SC1959 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Excellent hFE linearlity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30
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2SC1959
400mA
100mA,
100mA
100mA
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Untitled
Abstract: No abstract text available
Text: 2N5551 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2N5551
600mA)
100MHz
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npn transistors 400V 1A To92
Abstract: No abstract text available
Text: 3DD13003B NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 1.25MAX 2.92 MIN power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Collector-Base Voltage VCBO VCEO Collector-Emitter Voltage
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3DD13003B
25MAX
100mA,
npn transistors 400V 1A To92
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Untitled
Abstract: No abstract text available
Text: 2N5550 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160V) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2N5550
600mA)
100MHz
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2SD1991A
Abstract: No abstract text available
Text: 2SD1991A NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2SD1991A
100mA
200MHz
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2SD879
Abstract: germanium transistors NPN germanium npn 92
Text: 2SD879 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster Than that of germanium transistors.
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2SD879
2SD879s
750mW)
germanium transistors NPN
germanium npn 92
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s9014
Abstract: S9014 TO92 s9015
Text: S9014 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO
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S9014
S9015
100mA,
30MHz
S9014 TO92
s9015
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BC547
Abstract: bc548 BC546 BC548 npn BC547 to92 transistors BC548 IC BC548 BC547 BC546 BC548 ,BC558 bc548 TO-92
Text: BC546/BC547/BC548 NPN TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features High Voltage Complement to BC556,BC557,BC558 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Collector-Base Voltage VCBO Value BC546 BC547 BC548
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BC546/BC547/BC548
BC556
BC557
BC558
BC546
BC547
BC548
BC548 npn
BC547 to92
transistors BC548
IC BC548
BC547 BC546
BC548 ,BC558
bc548 TO-92
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Untitled
Abstract: No abstract text available
Text: 2N4401 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Value Units Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO
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2N4401
-55to
150mA
500mA
100MHz
100KHz
150mA,
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2SC388
Abstract: No abstract text available
Text: 2SC388 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features TV final pictureif amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage
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2SC388
45MHZ
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2sc1318
Abstract: 2sc131
Text: 2SC1318 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Collector output capacitance : Cob=11 pF (TYP),20 pF (MAX) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V
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2SC1318
500mA
300mA
200MHz
150mA
2sc131
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Untitled
Abstract: No abstract text available
Text: 2SC3279 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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2SC3279
100mA
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2SD1468
Abstract: No abstract text available
Text: 2SD1468 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Low saturation voltage Ideal for low voltage, high current dribes High DC current gain and high current MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Value Units
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2SD1468
100mA
500mA,
100MHz
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2sc2717
Abstract: No abstract text available
Text: 2SC2717 NPN TO-92 Bipolar Transistors TO-92 1. BASE 2. EMITTER 3. COLLECTOR Features High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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2SC2717
45MHZ)
30MHz
45MHz
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bc639
Abstract: bc635 bc637 BC639 collector
Text: BC635/637/639 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High current transistors Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Collector-Emitter Voltage VCBO Collector-Emitter Voltage
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BC635/637/639
BC635
BC637
BC639
BC639 collector
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Untitled
Abstract: No abstract text available
Text: 2SD1616A NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO
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2SD1616A
to150
PW350
100mA,
100mA
100mA
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