2n5153
Abstract: No abstract text available
Text: PNP Power Silicon Transistor 2N5151, 2N5151L & 2N5153, 2N5153L Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L TO-39 TO-205AD Package: 2N5151, 2N5153 Maximum Ratings (TC = +25°C unless otherwise noted)
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2N5151,
2N5151L
2N5153,
2N5153L
MIL-PRF-19500/545
2N5151L,
O-205AD)
2N5153
2n5153
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2N5154
Abstract: 2N5152
Text: NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/544 • TO-5 Package: 2N5152L, 2N5154L TO-39 TO-205AD Package: 2N5152, 2N5154 Maximum Ratings (TC = +25°C unless otherwise noted)
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2N5152,
2N5152L
2N5154,
2N5154L
MIL-PRF-19500/544
2N5152L,
O-205AD)
2N5154
2N5154
2N5152
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Untitled
Abstract: No abstract text available
Text: NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/544 • TO-5 Package: 2N5152L, 2N5154L TO-39 TO-205AD Package: 2N5152, 2N5154 Maximum Ratings (TC = +25°C unless otherwise noted)
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PDF
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2N5152,
2N5152L
2N5154,
2N5154L
MIL-PRF-19500/544
2N5152L,
O-205AD)
2N5154
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2n5154
Abstract: 2N5152
Text: NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/544 • TO-5 Package: 2N5152L, 2N5154L TO-39 TO-205AD Package: 2N5152, 2N5154 Maximum Ratings (TC = +25°C unless otherwise noted)
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2N5152,
2N5152L
2N5154,
2N5154L
MIL-PRF-19500/544
2N5152L,
O-205AD)
2N5154
2n5154
2N5152
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2N5153 JANS
Abstract: 2n5153
Text: PNP Power Silicon Transistor 2N5151, 2N5151L & 2N5153, 2N5153L Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L TO-39 TO-205AD Package: 2N5151, 2N5153 Maximum Ratings (TC = +25°C unless otherwise noted)
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2N5151,
2N5151L
2N5153,
2N5153L
MIL-PRF-19500/545
2N5151L,
O-205AD)
2N5153
2N5153 JANS
2n5153
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vpc3 c
Abstract: 802.11AC
Text: SZA-5044 Z SZA-5044(Z) 4.9GHz to 5.9GHz 5 V Power Amplifier 4.9GHz to 5.9GHz 5V POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT
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SZA-5044
SZA-5044"
SZA-5044Z"
SZA5044ZSQ
SZA5044ZSR
SZA5044Z
SZA5044Z-EVB1
vpc3 c
802.11AC
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pnp hfe 120-240
Abstract: 2SA1217 2SC2877 2SC28
Text: JMnic Product Specification 2SA1217 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2877 ・Good linearity of hFE APPLICATIONS ・Audio frequency power amplifier ・Low speed switching ・Suitable for output stage of 5 watts
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2SA1217
O-126
2SC2877
pnp hfe 120-240
2SA1217
2SC2877
2SC28
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2SA1217
Abstract: 2SC2877
Text: SavantIC Semiconductor Product Specification 2SA1217 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts
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2SA1217
O-126
2SC2877
2SA1217
2SC2877
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2SC2877
Abstract: 2SA1217
Text: SavantIC Semiconductor Product Specification 2SC2877 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts
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2SC2877
O-126
2SA1217
2SC2877
2SA1217
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MP25 transistor
Abstract: 2SK2723 2SK1794 2SK2941 2SK2135 transistor 2sj449 MP45F 2SJ329 2SK1760 2SK3055
Text: Road map Transistor Package Power MOS FET Package – RDS(on) MAP Package Type RDS(on)MAX (Ω) VGS = 10 V TO-251/252 (MP-3) TO-126 (MP-5) MP-10 up to 34 m — — up to 140 m — TO-220AB/263 (MP-25) Isolated TO-220 (MP-45F) TO-3P (MP-88) up to 400 m —
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O-251/252
O-126
MP-10
O-220AB/263
MP-25)
O-220
MP-45F)
MP-88)
X13769XJ2V0CD00
MP25 transistor
2SK2723
2SK1794
2SK2941
2SK2135
transistor 2sj449
MP45F
2SJ329
2SK1760
2SK3055
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2SC2877
Abstract: 2SA1217
Text: Inchange Semiconductor Product Specification 2SC2877 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts
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2SC2877
O-126
2SA1217
2SC2877
2SA1217
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2SA1217
Abstract: 2SC2877
Text: Inchange Semiconductor Product Specification 2SA1217 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts
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2SA1217
O-126
2SC2877
2SA1217
2SC2877
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SZA2044ZPCK-EVB2
Abstract: SZA-2044 SZA2044 SZA-2044Z transistor 2.4GHz class ab amplifier schematic transistor 2.4GHz amplifier schematic
Text: SZA-2044 Z SZA-2044(Z) 2.0GHz to 2.7GHz 5 V 1W Power Amplifier 2.0GHz to 2.7GHz 5V 1W POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMD’s SZA-2044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT
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SZA-2044
11b/g
SZA2044
SZA2044ZPCK-EVB2
DS100266
SZA2044ZPCK-EVB2
SZA-2044Z
transistor 2.4GHz class ab amplifier schematic
transistor 2.4GHz amplifier schematic
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L0335
Abstract: No abstract text available
Text: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5010 Package TO-5 NPN Transistor Symbol Power Absolute Maximum Ratings Power Dissipation Collector Current 'c Breakdown Voltage Collector-to-Base
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2N5010
300us
IGS01
0J019I4
83IMAX.
18J641
L7371
L0335
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2SC1096
Abstract: No abstract text available
Text: Product Specification www.jmnic.com 2SC1096 Silicon NPN Power Transistors DESCRIPTION ・With TO-202 package ・Low breakdown voltage ・High current ・High fT APPLICATIONS ・For audio frequency power amplifier and low speed switching applications ・Suitable for output stages of 3 to 5 watts
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2SC1096
O-202
O-202)
2SC1096
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2SC1096
Abstract: 2SC1096 hfe ic 4060 2sc1096 equivalent 2SC1096 M
Text: SavantIC Semiconductor Product Specification 2SC1096 Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·Low breakdown voltage ·High current ·High fT APPLICATIONS ·For audio frequency power amplifier and low speed switching applications ·Suitable for output stages of 3 to 5 watts
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2SC1096
O-202
O-202)
2SC1096
2SC1096 hfe
ic 4060
2sc1096 equivalent
2SC1096 M
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2sc1098
Abstract: 2SC1098A
Text: Product Specification www.jmnic.com 2SC1098 2SC1098A Silicon NPN Power Transistors DESCRIPTION ・With TO-202 package ・High Voltage ・High transition frequency APPLICATIONS ・Audio frequency power amplifier ・Low speed switching ・Suitable for output stages of 5~17W small
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2SC1098
2SC1098A
O-202
O-202)
2SC1098
2SC1098A
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Untitled
Abstract: No abstract text available
Text: NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/544 • TO-5 Package: 2N5152L, 2N5154L TO-39 (TO-205AD) Package: 2N5152, 2N5154 Maximum Ratings (TC = +25°C unless otherwise noted)
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2N5152,
2N5152L
2N5154,
2N5154L
MIL-PRF-19500/544
2N5152L,
O-205AD)
2N5154
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Untitled
Abstract: No abstract text available
Text: PNP Power Silicon Transistor 2N5151, 2N5151L & 2N5153, 2N5153L Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L TO-39 (TO-205AD) Package: 2N5151, 2N5153 Maximum Ratings (TC = +25°C unless otherwise noted)
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2N5151,
2N5151L
2N5153,
2N5153L
MIL-PRF-19500/545
2N5151L,
O-205AD)
2N5153
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Untitled
Abstract: No abstract text available
Text: Power management dual digital transistors IMD16A Features 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power dissipation. Dimensions (Unit : mm) (4) (5) (6) (3) (2) (1) Package, marking, and packaging specifications
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IMD16A
500mA
SC-74
R0039A
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2SC4722
Abstract: 2SD2451 2sc4719 2SB1482 2SA1820
Text: T ransistors TO-92L • TO-92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO -92L MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 ‘ C) Package Application
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O-92L
O-92LS
O-92L
O-92LS
5k10k
2SC4722
2SD2451
2sc4719
2SB1482
2SA1820
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2SD2236
Abstract: PESI
Text: Transistors TO-247 TO -220 class high output power package with Pc 60 to 100W. AudioOutput Low Vc e sat High Voltage SW Darlington _ (Unit : mm) (V) Ic (A) ☆2SB1477 -1 0 0 -5 60 60—320 -5 -1 - ☆2SB1345 -8 0 -7 80 60—320 -5
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O-247
2SB1477
2SB1345
2SD2236
2SD2062
2SA1788
2SA1633
2SC4652
2SC4278
2SA1789
PESI
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NPN Darlington Transistor
Abstract: MP6005
Text: TOSHIBA MP6005 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 MP600 5 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS MOTOR CONTROL APPLICATIONS. Package with H eat Sink Isolated to Lead (SIP 14 Pin)
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MP6005
MP600
--100A//iS
NPN Darlington Transistor
MP6005
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stk 490 110
Abstract: stk 490 310 stk 490 070 4830A k4013 Transistor y2n stk 490 040 stk*470 090 stk 470 070 STK 290 010
Text: Ordering number : EN4830A Thick Film Hybrid 1C No.4830A S TK 400-020 3-Channel AF Power Amplifier Split Power Supply ( 1 5 W + 1 5 W + 1 5 W min, THD = 0.4 %) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-com patibility to permit a single PCB to be
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EN4830A
STK400-020
0Cllb57fl
stk 490 110
stk 490 310
stk 490 070
4830A
k4013
Transistor y2n
stk 490 040
stk*470 090
stk 470 070
STK 290 010
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