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    TO-39 TRANSISTORS Search Results

    TO-39 TRANSISTORS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TO-39 TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NSP5665

    Abstract: sat 1205
    Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *


    Original     		PDF 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205

    2N5339

    Abstract: No abstract text available
    Text: 2N5339 SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistors in Jedec TO-39 metal case It is intended for high switching applications up to 5A. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N5339 2N5339

    BFY52

    Abstract: BFY51 BFY50 BFY50-BFY51 BFY50I
    Text: BFY50-BFY51 BFY52 MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BFY50-BFY51 BFY52 BFY50, BFY51 BFY52 BFY50 BFY51 BFY50 BFY50-BFY51 BFY50I

    2N4033

    Abstract: transistor 2N4033
    Text: 2N4033 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N4033 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


    Original     		PDF 2N4033 2N4033 transistor 2N4033

    BSY54

    Abstract: BSY53 BSY53-BSY54
    Text: BSY53 BSY54 GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BSY53 and BSY54 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, intended for use in general purpose amplifiers. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol


    Original     		PDF BSY53 BSY54 BSY54 BSY53-BSY54 220otherwise BSY53-BSY54

    BSY56

    Abstract: bsy55
    Text: BSY55 BSY56 GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BSY55 and BSY56 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, intended for use in high performance amplifier, oscillator and switching circuits. TO-39 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BSY55 BSY56 BSY56 BSY55-BSY56

    2N5680

    Abstract: 2N5679 2N5681 2N5682
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF ISO/TS16949 2N5679 2N5680 2N5681 2N5682 25deg 2N5680 2N5679 2N5681 2N5682

    BFY50

    Abstract: BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY52 BFY51I bfy50 cb
    Text: BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS


    Original     		PDF BFY50/51 BFY50 BFY52 BFY50 BFY51 BFY51 bfy51 equivalent BFY50-BFY51 BFY50 equivalent DATASHEET BFY51 BFY51I bfy50 cb

    2N5680

    Abstract: 2N5679 2N5681 2N5682
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF 2N5679 2N5680 2N5681 2N5682 25deg 2N5680 2N5679 2N5681 2N5682

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can Package NPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF BSX62, BSX63 BSX62 C-120 63Rev310701

    2N5154

    Abstract: No abstract text available
    Text: 2N5154 SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The 2N5154 is a silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended for use in switching applications. The complementary PNP type is the 2N5153. TO-39 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF 2N5154 2N5154 2N5153.

    RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ
    Text: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA • 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB typ @ 200 MHz TO-39 DESCRIPTION:


    Original     		PDF 2N5109 To-39 MRF545 MRF544 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ

    2N5680

    Abstract: 2N5681 2N5682 2N5679 TO-39 CASE to ambient
    Text: Transys Electronics L I M I T E D PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5679 2N5681 100 100


    Original     		PDF 2N5679 2N5680 2N5681 2N5682 25deg 2N5680 2N5681 2N5682 2N5679 TO-39 CASE to ambient

    BSX62

    Abstract: BSX62-10 BSX62-16 BSX63-16 BSX62-6 BSX63 BSX63-10 BSX63-6 bsx6210
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can Package NPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF BSX62, BSX63 BSX62 C-120 63Rev310701 BSX62 BSX62-10 BSX62-16 BSX63-16 BSX62-6 BSX63 BSX63-10 BSX63-6 bsx6210

    ksd113

    Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92
    Text: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100


    OCR Scan     		PDF bS01130 D0B70fll NSD206 O-202 NSDU56 NSDU57 ksd113 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92

    BUY82

    Abstract: 2N3419 N342 2N3418 2N4036 2N4037 BFX34 BSV60 2N3420 BUX34
    Text: PLANAR SWITCHING PLAN AR SW ITC H IN G T R A N S IS T O R S E LE C T O R C H A R T Devices listed are NPN except where marked with* which signifies PNP. Package TO-39 V ceo 1A 40 2N4037* 60 2N4036* 80 2N4000 100 2 N4001 Volts TO-39 TO-39 TO-39 TO-39 TO-39


    OCR Scan     		PDF 2N4037 BSV60 2N4036* BSV64 BFX34 2N3418 N3420 BUY90* BUX34 BUY80 BUY82 2N3419 N342 2N4036 2N4037 BSV60 2N3420

    BFW45

    Abstract: BFR59 BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 BFT58
    Text: High Voltage Transistors TYPE NO. 101 POLA­ RITY CASE MAXIMUM RATINGS VCEO IC Pd ICM* VCER* mA (mW) (V) VCE(sat) HFE min max IC (mA) VCE (V) m ai (V) IC (mA) fr min (MHz) Cob Cre* max (MHz) BFR59 BFS89 BFS90 BFS91 BFT47 N N P P N TO-39 TO-39 TO-39 TO-39


    OCR Scan     		PDF BFR59 BFS89 BFS90 BFS91 BFT47 5000G BFT48 BFT49 BFW45 BFT57 BFT58

    2N40361

    Abstract: BUX34 N4001 2N3418 2N4036 2N4037 BFX34 BSV60 BSV64 BUY80
    Text: PLANAR SWITCHING PLAN AR SW ITC H IN G T R A N S IS T O R S E LE C T O R C H A R T Devices listed are NPN except where marked with* which signifies PNP. Package TO-39 V ceo 1A 40 2N4037* 60 2N4036* 80 2N4000 100 2 N4001 Volts TO-39 TO-39 TO-39 TO-39 TO-39


    OCR Scan     		PDF 2N4037 BSV60 2N4036* BSV64 BFX34 2N3418 N3420 BUY90* BUX34 BUY80 2N40361 N4001 2N4036 2N4037 BSV60

    BUY80

    Abstract: 2N3418 2N3420 2N4036 2N4037 BFX34 BSV60 BSV64 BUX34 BUY90
    Text: PLANAR SWITCHING P LA N A R SW ITCHING T R A N SISTO R S ELECTO R C H A R T Devices listed are N P N except where marked w ith * w hich signifies PN P. Package !c V ceo J O -3 9 TO-39 TO-39 TO-39 TO-39 TO-39 1A 2A 3A 5A 7.5A 10A V olts 40 B S V 60 2N4037*


    OCR Scan     		PDF JO-39 2N4037* BSV60 2N4036* BSV64 BFX34 2N3418 2N3420 BUY90* BUX34 BUY80 2N4036 2N4037 BSV60 BUY90

    2N697 equivalent

    Abstract: 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 2N1711 DH3467CD N2904A BFY39 BFY50 equivalent
    Text: Discrete Devices Transistors Cont. European “Pro Electron” Types (Cont.) Near Equivalent Near Equivalent Polarity Pkg. Type BFX30 BFX37 BFX65 BFX84 BFX85 2 N2904A 2N2605* 2N2605* 2N1711 2N171-1 PNP PNP PNP NPN NPN TO-39 T O -18 T O -18 TO-39 TO-39 BSX45-10


    OCR Scan     		PDF BFX30 N2904A BFX37 2N2605* BFX65 BFX84 2N1711 BFX85 2N171-1 2N697 equivalent 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 DH3467CD BFY39 BFY50 equivalent

    transistor bc 138

    Abstract: bc 301 transistor transistor Bc 287 bc 303 transistor transistor BC 341 transistor BC 388 TRANSISTOR BC 345 transistor bc 144 transistor BC 310 transistor BC 185
    Text: 6 0 9 1 7 8 8 M I C R O E L E C T R O N I C S criiy» as D E Ït.D 'ilT flfl DODDbSS 82 D 0 0 6 5 5 7 Medium Power Amplifiers and Switches POLARITY M AXIM UM RATINGS CASE BC119 BC 138 BC 139 BC 140 BC 141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700


    OCR Scan     		PDF BC119 to-237 to-02 melf-002. melf-006 to-237 MT-12 Sto/s-20 O-16H S40/S- transistor bc 138 bc 301 transistor transistor Bc 287 bc 303 transistor transistor BC 341 transistor BC 388 TRANSISTOR BC 345 transistor bc 144 transistor BC 310 transistor BC 185

    Untitled

    Abstract: No abstract text available
    Text: TO-39 Metal-Can Package Transistors PNP 42


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-39 Metal-Can Package Transistors NPN 40


    OCR Scan     		PDF

    VP0808

    Abstract: vp0808M
    Text: Brsfconj* VP0808 SERIES P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY BOTTOM VIEW TO-39 TO-205AD PART NUMBER V (BR)DSS r DS(ON) •d (V) (ii) (A) PACKAGE VP0808B -80 5 -0.88 TO-39 VP0808L -80 5 -0.28 TO-92 VP0808M -80 5 -0.31 TO-237 1 SOURCE


    OCR Scan     		PDF VP0808 O-205AD) VP0808B VP0808L VP0808M O-237 VPDV10 O-226AA) vp0808M