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    TO-262AA PACKAGE EQUIVALENT Search Results

    TO-262AA PACKAGE EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    TO-262AA PACKAGE EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    hg 3a 1004

    Abstract: BT 139 F applications note
    Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS ¡H A R R IS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features JEDEC TO -220AB • 6A, 600V at Tc = +25°C EMITTER • 600V Switching SOA Capability


    OCR Scan     		PDF HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS -220AB ay1996 130ns HGT1S3N60C3DS 1-800-4-HARRIS hg 3a 1004 BT 139 F applications note

    g7n60b3d

    Abstract: G7N60B3 G7N60 igbt g7n60b3d N 407 Diode
    Text: HARRIS HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode November 1997 Features Description • 14A, 600V, T C = 2 5 °C The HGTP7N60B3D, HGT1S7N60B3D and HGT1S7N60B3DS


    OCR Scan     		PDF HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS HGT1S7N60B3D HGT1S7N60B3DS TA49190. RHRD660 TA49057) 1-800-4-HARRIS g7n60b3d G7N60B3 G7N60 igbt g7n60b3d N 407 Diode

    G12N60B3

    Abstract: TO-262AA Package equivalent
    Text: HARRIS HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 2 5 °C The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the


    OCR Scan     		PDF HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 HGT1S12N60B3S 1-800-4-HARRIS G12N60B3 TO-262AA Package equivalent

    G7N60B3

    Abstract: g7N60B EM- 546 motor
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HARRIS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, T C = 2 5 °C The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high volt­


    OCR Scan     		PDF HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 G7N60B3 g7N60B EM- 546 motor

    15N120C3

    Abstract: No abstract text available
    Text: HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HARFRIS S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1200V, T C = 25°C The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching


    OCR Scan     		PDF HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGT1S15N120C3 HGT1S15N120C3S 350ns 15N120C3

    Untitled

    Abstract: No abstract text available
    Text: ïfA R m S HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    OCR Scan     		PDF HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S 108ns

    DIODE 3LU

    Abstract: DIODE 3LU 32 DIODE 3LU 35 3lu diode
    Text: HARFR IS HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 25°C The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the


    OCR Scan     		PDF HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 112ns 1-800-4-HARRIS DIODE 3LU DIODE 3LU 32 DIODE 3LU 35 3lu diode

    Untitled

    Abstract: No abstract text available
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS uADQie rw o S E M I C rtru O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Description Features This fam ily of MOS gated high voltage switching devices


    OCR Scan     		PDF HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode November 1997 Features Description • 14A, 600V, T C = 25°C The HGTP7N60B3D, HGT1S7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining


    OCR Scan     		PDF HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS HGT1S7N60B3D TA49190. RHRD660 TA49057) 1-800-4-HARRIS

    G3N60B3

    Abstract: No abstract text available
    Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HARRIS S E M I C O N D U C T O R 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, Tc = 2 5 °C The HGTD3N60B3S, H G TD3N 60B3, HGT1S3N60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high


    OCR Scan     		PDF HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HGT1S3N60B3S HGTP3N60B3 1-800-4-HARRIS G3N60B3

    G3N60B

    Abstract: No abstract text available
    Text: HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 HADDIQ 7A, 600V, UFS Series N-Channel IGBT September 1997 Features Description • 7A, 600V, T c = 2 5 °C The H GTD3N60B3S, HG TD3N 60B3, HG T1S3N 60B3, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high


    OCR Scan     		PDF HGTD3N60B3, HGTD3N60B3S, HGT1S3N60B3, HGT1S3N60B3S, HGTP3N60B3 GTD3N60B3S, HGT1S3N60B3S HGTP3N60B3 115ns 1-800-4-HARRIS G3N60B

    Untitled

    Abstract: No abstract text available
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HADDIQ S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, T C = 25°C The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high volt­


    OCR Scan     		PDF HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3

    p12n60c3

    Abstract: S12N60C3
    Text: HARRIS HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1 9 9 7 Features Description • 24A, 600V at T c = 25°C The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the


    OCR Scan     		PDF HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 230ns p12n60c3 S12N60C3

    12n60c3d

    Abstract: IGBT 12n60c3D
    Text: u A Q Q ie HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Description • 24A, 600V at T c = 25°C This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transis­


    OCR Scan     		PDF HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS TA49123. TA49188. O-263AB 12n60c3d IGBT 12n60c3D

    15N120C3

    Abstract: TP15N120 15n120
    Text: HAFRRIS HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBTs June 1997 Features Description • 35A, 1 200V, T c = 25°C The HGTG15N120G3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching


    OCR Scan     		PDF HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3, HGT1S15N120C3S HGTG15N120G3, HGT1S15N120C3 HGT1S15N120C3S 1-800-4-HARRIS 15N120C3 TP15N120 15n120

    Untitled

    Abstract: No abstract text available
    Text: HGTP12N60C3R, HGT1S12N60C3R, HGT1S12N60C3RS 24A, 600V, Rugged, UFS Series N-Channel IGBTs December 1997 Description Features This family of IGBTs was designed for optimum performance in the demanding world of motor control operation as well as other high voltage switching applications. These devices


    OCR Scan     		PDF HGTP12N60C3R, HGT1S12N60C3R, HGT1S12N60C3RS 250ns 1-800-4-HARRIS

    MJ-112

    Abstract: T1S12 mosfet 600v 10a to-220ab
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS HARRIS S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description This family of MOS gated high voltage switching devices com bine the best features of MOSFETs and bipolar transis­


    OCR Scan     		PDF HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 1-800-4-HARRIS MJ-112 T1S12 mosfet 600v 10a to-220ab