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    TO-261AA PACKAGE Search Results

    TO-261AA PACKAGE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    TO-261AA PACKAGE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TO-261AA Package International Rectifier Case Outline and Dimensions Original PDF

    TO-261AA PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FL014

    Abstract: 314P
    Text: PD- 95227 IRFL014PbF _Lead-Free 1 IRFL014PbF 2 IRFL014PbF SOT-223 TO-261AA Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXF ET PRODUCT MARKING T HIS IS AN IRF L014 INT ERNAT IONAL RECT IF IER LOGO


    Original     		PDF IRFL014PbF OT-223 O-261AA) FL014 314P

    FL014

    Abstract: TO261AA IRFL014PBF 314P irf sot223 L014
    Text: PD- 95227 IRFL014PbF _Lead-Free www.irf.com 1 04/28/04 IRFL014PbF 2 www.irf.com IRFL014PbF www.irf.com 3 IRFL014PbF 4 www.irf.com IRFL014PbF www.irf.com 5 IRFL014PbF 6 www.irf.com IRFL014PbF www.irf.com 7 IRFL014PbF SOT-223 TO-261AA Package Outline Dimensions are shown in milimeters (inches)


    Original     		PDF IRFL014PbF OT-223 O-261AA) FL014 TO261AA IRFL014PBF 314P irf sot223 L014

    fl014

    Abstract: 314P TO261AA
    Text: PD- 95228 IRFL210PbF • Lead-Free www.irf.com 1 04/28/04 IRFL210PbF 2 www.irf.com IRFL210PbF www.irf.com 3 IRFL210PbF 4 www.irf.com IRFL210PbF www.irf.com 5 IRFL210PbF 6 www.irf.com IRFL210PbF www.irf.com 7 IRFL210PbF SOT-223 TO-261AA Package Outline Dimensions are shown in milimeters (inches)


    Original     		PDF IRFL210PbF OT-223 O-261AA) fl014 314P TO261AA

    E1005

    Abstract: SOT223 LAND PATTERN MD-SOT223-002-a SOT-223 package outline
    Text: PACKAGE MECHANICAL INFORMATION SOT-223 Package Outline Dimensions TO-261AA, JEDEC Publication 95 4-Pin Plastic Small Outline Surface Mount 2.85 - 3.10 0.112 - 0.122 4 6.70 - 7.30 (0.264 - 0.287) 1 2 3 2.30 TYP. (0.090) 4.60 TYP. (0.181) 6.30 - 6.70 (0.248 - 0.264)


    Original     		PDF OT-223 O-261AA, MD-SOT223-002-a TSP0504 E1005 SOT223 LAND PATTERN MD-SOT223-002-a SOT-223 package outline

    Untitled

    Abstract: No abstract text available
    Text: Power Packages SOT-223 TO-261AA SMALL OUTLINE TRANSISTOR D E INCHES A D1 A1 E1 c e L 0-10 MAX MIN MAX NOTES A 0.063 0.070 1.60 1.78 - A1 0.0008 0.004 0.02 0.10 - b 0.026 0.033 0.65 0.85 - c 0.010 0.014 0.25 0.35 - D 0.248 0.264 6.30 6.70 D1 0.116 0.124 2.95


    Original     		PDF OT-223 O-261AA) O-261

    Untitled

    Abstract: No abstract text available
    Text: Power Packages SOT-223 TO-261AA SMALL OUTLINE TRANSISTOR D INCHES A D1 E A1 E1 c e L b SYMBOL MIN MAX MIN MAX NOTES A 0.063 0.070 1.60 1.78 - A1 0.0008 0.004 0.02 0.10 - b 0.026 0.033 0.65 0.85 - c 0.010 0.014 0.25 0.35 - D 0.248 0.264 6.30 6.70 D1 0.116


    Original     		PDF OT-223 O-261AA) O-261 330mm 100mm EIA-481

    Untitled

    Abstract: No abstract text available
    Text: FS02.N SENSITIVE GATE SCR On-State Current Gate Trigger Current 1.25 Amp < 200 µA Off-State Voltage 400 V ÷ 800 V TO-261AA SOT-223 FEATURES • Glass/passivated die junctions • Low current SCR • Low thermal resistance • High surge current capability


    Original     		PDF O-261AA OT-223) 2011/65/EU 2002/96/EC J-STD-020, MIL-STD-750 J-STD-002 JESD22-B102.

    fl014

    Abstract: FL014 Example FL014 datasheet irfl4310 IRFL014 EIA-541 sot-223 code marking marking code 4X 10e1l TO261AA
    Text: IRFL4310 Package Outline HEXFET SOT-223 TO-261AA Outline E LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN B1 3 - SOURCE 0.10 (.004) M C B M 4 - DRAIN D -B- 3 3 H 0.20 (.008) M C A M -A1 2 A L1 0.10 (.004) M C B M MAX MIN MAX 1.55 1.80 .061 .071 B 0.65 0.85 .026 .033


    Original     		PDF IRFL4310 OT-223 O-261AA) IRFL014 FL014 fl014 FL014 Example FL014 datasheet irfl4310 IRFL014 EIA-541 sot-223 code marking marking code 4X 10e1l TO261AA

    FL014

    Abstract: FL014 Example FL014 equivalent EIA-541 IRFL014 marking code 4X IRFL4310
    Text: IRFL4310 Package Outline HEXFET SOT-223 TO-261AA Outline E LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN B1 3 - SOURCE 0.10 (.004) M C B M 4 - DRAIN D -B- 3 3 H 0.20 (.008) M C A M -A1 2 A L1 0.10 (.004) M C B M MAX MIN MAX 1.55 1.80 .061 .071 B 0.65 0.85 .026 .033


    Original     		PDF IRFL4310 OT-223 O-261AA) IRFL014 FL014 FL014 FL014 Example FL014 equivalent EIA-541 IRFL014 marking code 4X IRFL4310

    TO-261AA Package

    Abstract: IT 223 SOT223 nu FL014
    Text: IRLL014N Package Outline SOT-223 TO-261AA Outline Part Marking Information SOT-223 E X A M P L E : T H IS IS A N IR FL 0 14 P A R T NU M B E R IN TE RN A TIO NA L RE CT IF IE R LO G O F L0 14 31 4 TOP 8 W A FER LO T CO D E XXXXXX D A TE CO D E (Y W W ) Y = LA S T D IG IT O F TH E Y E A R


    Original     		PDF IRLL014N OT-223 O-261AA) TO-261AA Package IT 223 SOT223 nu FL014

    sot-223 body marking D K Q F

    Abstract: MV7005T1 pd 223 V7005
    Text: MOTOROLA Order this document by MV7005T1/D SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for


    Original     		PDF MV7005T1/D MV7005T1 OT-223 sot-223 body marking D K Q F MV7005T1 pd 223 V7005

    marking 651 sot223

    Abstract: No abstract text available
    Text: ON Semiconductort PZT651T1 NPN Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface


    Original     		PDF PZT651T1 inch/1000 PZT651T3 inch/4000 PZT751= marking 651 sot223

    sot-223 body marking D K Q F

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA T Field Effect Transistor N-Channel Enhancement-Mode Logic Level SOT-223 MMFT108T1 TM OS 2 ,4 DRAIN TMOS FET TRANSISTOR N-CHANNIEL — ENHANCEMENT CASE 318E-04, STYLE 3 SOT-223 TO-261AA


    OCR Scan     		PDF MMFT108T1/D OT-223 MMFT108T1 318E-04, O--261AA) 1-80CM41-2447 sot-223 body marking D K Q F

    diode MARKING c9

    Abstract: MV7005T1 V7005
    Text: MV7005T1* CASE 318E-04, STYLE 2 TO-261AA MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Rating Vr 15 Volts Forward Current if 50 mA Pd 280 28 mW/cC Total Power Dissipation @ T /\ = 25: C Derate above 25-C Junction Temperature Storage Temperature Range Tj


    OCR Scan     		PDF MV7005T1* 318E-04, O-261AA OT-223 V7005_ MV7005T1, MV7005T3 diode MARKING c9 MV7005T1 V7005

    Untitled

    Abstract: No abstract text available
    Text: PZTA42T1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S Rating Symbol Value v CEO 300 Vdc Collector-Base Voltage (Open Emitter) VCBO 300 Vdc Emitter-Base Voltage (Open Collector) v EBO Collector-Em itter Voltage (Open Base) Collector Current (DC)


    OCR Scan     		PDF PZTA42T1* 318E-04, O-261AA) OT-223

    transistor P2P

    Abstract: No abstract text available
    Text: PZTA92T1* CASE 318E-04, STYLE 1 TO-261AA M AXIM UM RATINGS Unit Symbol Value Collector-Emitter Voltage v CEO -3 0 0 Vdc Collector-Base Voltage v CBO -3 0 0 Vdc Emitter-Base Voltage Ve b o - 5 .0 Vdc 'C -5 0 0 mAdc Total Power Dissipation up to T ^ = 25 C‘


    OCR Scan     		PDF PZTA92T1* 318E-04, O-261AA) OT-223 transistor P2P

    Untitled

    Abstract: No abstract text available
    Text: PZTA96T1* CASE 318E-04, STYLE 1 TO-261AA M A XIM U M RATINGS Rating Symbol Value Unit v CEO - 450 Vdc Collector-Base Voltage v CBO - 450 Vdc Emitter-Base Voltage Ve b o -5 .0 Vdc 'C -5 0 0 mAdc Collector-Emitter Voltage Collector Current Total Power Dissipation up to T /\ = 25 C*


    OCR Scan     		PDF PZTA96T1* 318E-04, O-261AA) OT-223

    Untitled

    Abstract: No abstract text available
    Text: PZT2907AT1* M A X IM U M R A T IN G S Rating Collector-Emitter Voltage Symbol Value CASE 318E-04, STYLE 1 TO-261AA Unit v CEO -6 0 Vdc Collector-Base Voltage VCBO -6 0 Vdc Emitter-Base Voltage Ve b O - 5.0 Vdc Collector Current 'c -6 0 0 mAdc Total Power Dissipation, T ^ = 25 ‘C*


    OCR Scan     		PDF PZT2907AT1*

    tic 223

    Abstract: liA SOT23 7S1B-03
    Text: CASE 29-04 T0 -2 2 6 AA TO-92 1 3 2 CASE 318E-04 (TO-261AA) SOT-223 CASE 318-07 (TO-236AB) SOT-23 14 CASE 646-06 (TO-116) Plastic-Encapsulated Transistors CASE 7S1B-03 SO-16 M o to ro la 's p la s tic tra n s is to rs and d io d e s e n co m p a ss huncreds of devices spanning the gamut from general-purpose


    OCR Scan     		PDF O-236AB) OT-23 318E-04 O-261AA) OT-223 O-116) 7S1B-03 SO-16 O-116 OT-23, tic 223 liA SOT23

    AKD SOT223

    Abstract: No abstract text available
    Text: PZT2222AT1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S R atin g S ym bol V alue C o lle cto r-E m itte r V oltage v CEO 40 Vdc C o lle cto r-B a se V oltage v CB O 75 Vdc E m itter-B ase Voltage (O p en C ollector) v EBO 60 V dc 'C 600 m A dc


    OCR Scan     		PDF PZT2222AT1* 318E-04, O-261AA) OT-223 PZT2222AT1 AKD SOT223

    Untitled

    Abstract: No abstract text available
    Text: PZTA42T1* CASE 318E-04, STYLE 1 TO-261AA M A X IM U M R A T IN G S Rating Symbol Value C o lle c to r - E m itte r V o lta g e ( O p e n B a s e ) v CEO 300 Vdc COLLECTOR C o lle c to r - B a s e V o lta g e ( O p e n E m itte r) VCBO 300 Vdc 24 v EBO 6.0


    OCR Scan     		PDF PZTA42T1* 318E-04, O-261AA) 111Pij

    Untitled

    Abstract: No abstract text available
    Text: PZTA64T1* CASE 318E-04, STYLE 1 TO-261AA M AXIMUM RATINGS Rating Symbol Value C o lle c to r - E m itte r V o lta g e VCES - 30 Vdc C o lle c to r - B a s e V o lta g e VCBO -3 0 Vdc ve b o - 10 Vdc 1.5 W a tts - 500 m Adc E m itte r - B a s e V o lta g e


    OCR Scan     		PDF PZTA64T1* 318E-04, O-261AA) OT-223

    TGAM1

    Abstract: SOT-223 AKD AKD SOT223
    Text: PZTA96T1* CASE 318E-04, STYLE 1 TO-261AA M AXIMUM RATINGS Rating Symbol Value Unit C o lle cto r-E m itte r V oltage v CEO -4 5 0 Vdc C o lle cto r-B a se V oltage VCBO -4 5 0 V dc E m itter-B ase Voltage v EBO - 5.0 V dc 'c - 500 m A dc C o lle cto r C u rre n t


    OCR Scan     		PDF PZTA96T1* 318E-04, O-261AA) OT-223 TGAM1 SOT-223 AKD AKD SOT223

    transistor P2D

    Abstract: SOT-223 AKD AKD SOT223
    Text: PZTA92T1* CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS Rating Symbol Value Unit v CEO -3 0 0 V dc C o lle cto r-B a se V oltage v CBO -3 0 0 V dc E m itter-B ase V oltage v EBO - 5.0 Vdc 'C -5 0 0 m A dc C o lle cto r-E m itte r Voltage C o lle cto r C urrent


    OCR Scan     		PDF PZTA92T1* 318E-04, O-261AA) OT-223 transistor P2D SOT-223 AKD AKD SOT223