Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU01N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-252
CJU01N60
O-252
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU02N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-252
CJU02N60
O-252
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CHM25N15LPAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CHM25N15LPAGP CURRENT 25 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small package. (TO-252)
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CHM25N15LPAGP
O-252)
250uA
CHM25N15LPAGP
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CHM05N65PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small flat package. D-PAK(TO-252)
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CHM05N65PAGP
O-252)
250uA
CHM05N65PAGP
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D2N60
Abstract: U2N60
Text: PJD2N60 / PJU2N60 TO-252 / TO-251 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A, 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A • • • • • • TO-251 TO-252 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJD2N60
PJU2N60
2002/95/EC
O-252
O-251
O-252
O-251
MIL-STD-750
D2N60
U2N60
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TB304
Abstract: came
Text: Harris Semiconductor No. TB304 Harris Power February 1994 Advanced Power Package Construction Method Raises TO-252 Reliability To New Heights This technical backgrounder is intended to show how Harris redesigned the TO-252 surface-mount power package into
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TB304
O-252
O-252packaged
O-252-packaged
TB304
came
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TB304
Abstract: No abstract text available
Text: Advanced Power Package Construction Method Raises TO-252 Reliability To New Heights Technical Brief This technical backgrounder is intended to show how Intersil redesigned the TO-252 surface-mount power package into the most reliable package of its type in the industry.
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O-252
TB304
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SSD15N10
Abstract: MosFET 15N10
Text: SSD15N10 15A, 100V, RDS ON 110mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD15N10 provide the designer with the best combination of fast switching. The TO-252 package is
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SSD15N10
O-252
SSD15N10
15N10
07-Mar-2013
MosFET
15N10
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SS*2n60b
Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
Text: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031
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O-252
O-252
FDD3706
FDD6512A
FDD6530A
RFD20N03SM
FDD6676
ISL9N306AD3ST
FDD6672A
FDD66
SS*2n60b
FDD5614P
FQD7P20
FDD6512A
SFR9224
FQD14N15
IRFR420A
MA8630
MOSFET TO-252
FDD6530A
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Untitled
Abstract: No abstract text available
Text: SSD15N10 15A, 100V, RDS ON 110mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD15N10 provide the designer with the best combination of fast switching. The TO-252 package is
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SSD15N10
O-252
SSD15N10
15N10
06-Aug-2012
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Untitled
Abstract: No abstract text available
Text: SSD15N10 15A, 100V, RDS ON 100mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD15N10 provide the designer with the best combination of fast switching. The TO-252 package is
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SSD15N10
O-252
SSD15N10
O-252
25-Apr-2011
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3020P
Abstract: APM3020P
Text: APM3020P P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-11A, RDS ON = 17mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -5V • • • Super High Density Cell Design Reliable and Rugged TO-252 Package G D S Applications Top View of TO-252
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APM3020P
-30V/-11A,
O-252
O-252
3020P
3020P
APM3020P
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Untitled
Abstract: No abstract text available
Text: SSD3030P P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TO-252 RDS(ON) (mΩ) Max D 25 @VGS = -10V G 45 @VGS = -5V -30A -30V S 55 @VGS = -4.5V D FEATURES Super high density cell design for low RDS(ON) . Rugged and reliable. G TO-252 package.
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SSD3030P
O-252
O-252
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ssd103
Abstract: TO-252 MOSFET p channel
Text: SSD1030P P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TO-252 RDS(ON) (mΩ) Max D 65 @VGS = - 10V -30V G 115 @VGS = - 5V -15A S D 130 @VGS = - 4.5V FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G TO-252 package.
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SSD1030P
O-252
O-252
ssd103
TO-252 MOSFET p channel
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DIODE D3S 90
Abstract: BC 247 sot-23 d2s diode DIODE d3s TRAY DIMENSIONS SOIC16 tape & reel d3s diode
Text: Discrete Surface Mount Prefixes Suffixes Pkg dim D-PAK TO-252-2L RHRD RURD S S D2S Dim D-PAK (TO-252-3L) IRFR RFD RLD FDD MOSFET Bipolar Diode JFETs IGBT Pkg method Qty (pcs) Reel dia Tape width (inch) (mm) Tape & Reel 2.5K 13 16 X Tape & Reel 2.5K 13 16
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O-252-2L)
O-252-3L)
O-263/D2PAK
O-263/D2PAK
O-268
DIODE D3S 90
BC 247 sot-23
d2s diode
DIODE d3s
TRAY DIMENSIONS SOIC16
tape & reel
d3s diode
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Untitled
Abstract: No abstract text available
Text: FDD9409_F085 N-Channel PowerTrench MOSFET 40 V, 90 A, 3.2 mΩ D Features Typ RDS on = 2.3mΩ at VGS = 10V, ID = 80A D G Typ Qg(tot) = 42nC at VGS = 10V, ID = 80A UIS Capability G S RoHS Compliant Qualified to AEC Q101 D-PAK TO-252 (TO-252)
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FDD9409
O-252
O-252)
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SSD5030N
Abstract: AIDM-110 South Sea Semiconductor
Text: SSD5030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 50A TO-252 RDS(ON) (mΩ) Max D 9.5 @VGS = 10V G 19.5 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G TO-252 package. Pb free. S o
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SSD5030N
O-252
O-252
SSD5030N
AIDM-110
South Sea Semiconductor
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2070-P
Abstract: ANPEC Marking 2G2 APM2070P J-STD-020A
Text: APM2070P P-Channel Enhancement Mode MOSFET Features • • • • Pin Description -20V/-5A , RDS ON =78mΩ(typ.) @ VGS=-10V RDS(ON)=113mΩ(typ.) @ VGS=-4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged G TO-252 Package D Top View of TO-252
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APM2070P
-20V/-5A
O-252
O-252
2070P
2070-P
ANPEC
Marking 2G2
APM2070P
J-STD-020A
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diode ja
Abstract: No abstract text available
Text: SSD3030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 30A TO-252 RDS(ON) (mΩ) Max D 17 @VGS = 10V G 35 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable. G ◆ TO-252 package. ◆ Pb Free.
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SSD3030N
O-252
O-252
25mum
diode ja
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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O-251/TO-252
O-220/TO-263
OT-23
OT-223
OT-89
2928-8J
O-220FM
CEP50N06
CEP83A3 equivalent
cep83a3
CEF02N6A
cep6355
FQPF8N60C equivalent
CEF04N6 equivalent
CEP63A3
CEP20N06
cep76139
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2 form c ssr
Abstract: aqw214ax AQW216 ssr schematic circuit AQW212 AQW212A AQW212AX AQW212AZ AQW214 AQW215
Text: GU PhotoMOS AQW21P Compact DIP (2 Form A) 8-pin type. Controls load voltage 60V to 600V. FEATURES 6.4 .252 9.78 .385 3.9 .154 6.4 .252 3.6 .142 9.78 .385 mm inch 1 8 2 7 3 6 4 5 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 x (L) 9.78 ×(H) 3.9 mm (W) .252×(L)
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AQW21
AQW212
AQW215
AQW216
AQW210
AQW214
AQW216
AQW210
AQW217
2 form c ssr
aqw214ax
ssr schematic circuit
AQW212
AQW212A
AQW212AX
AQW212AZ
AQW214
AQW215
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Linear Regulator sot-89-5
Abstract: APL5902 DIODE CBP Schottky Diode SOT-89 27BSC APL5901 STD-020C
Text: APL5901/2 Low IQ, Low Dropout 900mA Fixed Voltage Regulator Features Built in Current Limit Protection Controlled Short Circuit Current : 200mA Fast Transient Response Short Setting Time SOT-89, SOT-89-5, SOT-223, SO-8 ,TO-252 and TO-252-5 Packages Lead Free Available RoHS Compliant
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APL5901/2
900mA
100Hz
100kHz)
210mV
900mA)
APL5901/2
Linear Regulator sot-89-5
APL5902
DIODE CBP
Schottky Diode SOT-89
27BSC
APL5901
STD-020C
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Untitled
Abstract: No abstract text available
Text: FDD9409_F085 N-Channel PowerTrench MOSFET D 40 V, 90 A, 3.2 m Features D G Typical RDS on = 2.3 m at VGS = 10 V, ID = 80 A G Typical Qg(tot) = 42 nC at VGS = 10 V, ID = 80 A S UIS Capability RoHS Compliant D-PAK TO-252 (TO-252) S Qualified to AEC Q101
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FDD9409
O-252
O-252)
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Untitled
Abstract: No abstract text available
Text: SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 20A TO-252 RDS(ON) (mΩ) Max D 30 @VGS = 10V G 55 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ TO-252 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
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SSD2030N
O-252
O-252
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