Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD02N60 N-Channel Power MOSFET TO-251 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-251
CJD02N60
O-251
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET TO-251 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-251
CJD01N60
O-251
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET TO-251 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-251
CJD01N60
O-251
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PJP1N80
Abstract: No abstract text available
Text: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP1N80
PJU1N80
O-220AB/TO-251
O-220AB
IEC61249
2002/95/EC
O-220AB
O-251
MIL-STD-750
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D2N60
Abstract: U2N60
Text: PJD2N60 / PJU2N60 TO-252 / TO-251 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A, 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A • • • • • • TO-251 TO-252 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJD2N60
PJU2N60
2002/95/EC
O-252
O-251
O-252
O-251
MIL-STD-750
D2N60
U2N60
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P1N80
Abstract: U1N80 ELER
Text: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP1N80
PJU1N80
O-220AB/TO-251
O-220AB
O-251
2002/95/EC
O-220AB
O-251
MIL-STD-750
PJP1N80
P1N80
U1N80
ELER
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SID15N10
Abstract: MosFET 15N10
Text: SID15N10 15A, 100V, RDS ON 110mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-251 DESCRIPTION The SID15N10 provide the designer with the best combination of fast switching. The TO-251 package is
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SID15N10
O-251
SID15N10
O-251
15N10
22-Apr-2013
MosFET
15N10
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IRFU210A
Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
Text: Discrete MOSFET TO-251 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-251(IPAK) N-Channel FDU3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDU6512A 20 Single - 0.021 0.031
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O-251
O-251
FDU3706
FDU6512A
ISL9N308AD3
ISL9N312AD3
ISL9N306AD3
FDU6644
FDU6680A
FDU7037P06
IRFU210A
IRFU230A
FDU3706
FDU6030BL
FDU6512A
FDU6612A
FDU6644
FDU6680A
FDU6692
FDU7030BL
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SID05N10
Abstract: MosFET 05n10
Text: SID05N10 5A , 100V , RDS ON 170 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen-free TO-251 DESCRIPTION The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is
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SID05N10
O-251
SID05N10
O-251
05N10
40nction
300us,
26-Dec-2011
MosFET
05n10
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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O-251/TO-252
O-220/TO-263
OT-23
OT-223
OT-89
2928-8J
O-220FM
CEP50N06
CEP83A3 equivalent
cep83a3
CEF02N6A
cep6355
FQPF8N60C equivalent
CEF04N6 equivalent
CEP63A3
CEP20N06
cep76139
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mosfet 300V 10A
Abstract: M01N60 mosfet 10V 10A n channel mosfet mosfet 10a 600v 2a 400v mosfet to-251 FAST RECOVERY DIODE 10A 400V
Text: N Channel MOSFET M01N60 1.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits
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M01N60
O-251
O-252
O-251/252
00A/S
mosfet 300V 10A
M01N60
mosfet 10V 10A
n channel mosfet
mosfet 10a 600v
2a 400v mosfet to-251
FAST RECOVERY DIODE 10A 400V
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mosfet 600V 20A
Abstract: M02N60 Mosfet 600V, 20A TO 220 Package High current N CHANNEL MOSFET MOSFET 400V TO-220 n channel mosfet 600V 2A MOSFET N-channel N channel mosfet TO220
Text: N Channel MOSFET M02N60 2.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits
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M02N60
O-251
O-252
O-251/252
O-220
00A/S
mosfet 600V 20A
M02N60
Mosfet 600V, 20A
TO 220 Package High current N CHANNEL MOSFET
MOSFET 400V TO-220
n channel mosfet
600V 2A MOSFET N-channel
N channel mosfet TO220
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PJ1N60
Abstract: No abstract text available
Text: PJ1N60 Power Field Effect Transistor T he PJ1N60 Series is a high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- TO-252 TO-251 blocking capability without degrading performance over time.In addition, this advanced MOSFET is designed to withstand high
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PJ1N60
voltageTO-251
O-252
O-252
27BSC
05BSC
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Untitled
Abstract: No abstract text available
Text: PJ2N60 Power Field Effect Transistor T he PJ2N60 Series is a high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time.In TO-251 addition, this advanced MOSFET is designed to withstand high
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PJ2N60
voltageTO-251
O-252
O-251
O-252
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET 1 TO-251 FEATURES * RDS ON < 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified 1 TO-252 SYMBOL
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UT50N03
O-251
O-252
O-252D
UT50N03L-TM3-T
UT50N03G-TM3-T
UT50N03L-TN3-T
UT50N03G-TN3-T
UT50N03L-TN3-R
UT50N03G-TN3-R
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N mosfet 100v 200A
Abstract: No abstract text available
Text: ST36N10D N Channel Enhancement Mode MOSFET 36.0A DESCRIPTION STN36N10D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) TO-252 TO-251
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ST36N10D
STN36N10D
O-252
O-251
00V/20
O-252
O-251
ST36N10D
N mosfet 100v 200A
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IXTU1N80P
Abstract: T1N80 1N80P
Text: Preliminary Technical Information PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) S Test Conditions VDSS TJ = 25°C to 150°C
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O-263
IXTA1N80P
IXTP1N80P
IXTU1N80P
IXTY1N80P
O-251
O-220
IXTU1N80P
T1N80
1N80P
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1N80P
Abstract: T1N80 IXTU1N80P IXTA1N80P IXTA1N80 IXTP1N80P
Text: Preliminary Technical Information PolarTM Power MOSFET IXTA1N80P IXTP1N80P IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G S VDSS ID25 RDS(on) TO-251 (IXTU) TO-220 (IXTP) (TAB) G G (TAB) D S Symbol Test Conditions VDSS TJ = 25°C to 150°C
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IXTA1N80P
IXTP1N80P
IXTU1N80P
IXTY1N80P
O-263
O-251
O-220
1N80P
T1N80
IXTU1N80P
IXTA1N80P
IXTA1N80
IXTP1N80P
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168B
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET 1 FEATURES TO-252 * RDS ON = 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified 1 SYMBOL TO-251 2.Drain
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UT50N03
O-252
O-251
UT50N03L-TM3-T
UT50N03G-TM3-T
UT50N03L-TN3-R
UT50N03G-TN3-R
UT50N03L-TN3-T
UT50N03G-TN3-T
168B
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Untitled
Abstract: No abstract text available
Text: PolarTM Power MOSFET VDSS = 500V = 5A ID25 RDS on ≤ 1.4Ω Ω IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P N-Channel Enhancement Mode Avalanche Rated TO-251 (IXTU) G S D (Tab) TO-252 (IXTY) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXTU5N50P
IXTY5N50P
IXTA5N50P
IXTP5N50P
O-251
O-252
O-220
O-251
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IXTA5N50P
Abstract: IXTP5N50P IXTU5N50P
Text: IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 500V = 5A ID25 RDS on ≤ 1.4Ω Ω TO-251 (IXTU) G S D (Tab) TO-252 (IXTY) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXTU5N50P
IXTY5N50P
IXTA5N50P
IXTP5N50P
O-251
O-252
O-263
O-220AB
O-251
O-220
IXTP5N50P
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ut3055
Abstract: diode BA 158 mosfet BA 95 S
Text: UNISONIC TECHNOLOGIES CO., LTD UT3055 Power MOSFET 12A, 25V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-252 The UTC UT3055 is N-Channel logic level enhancement mode field effect transistor. SYMBOL 2.Drain 1 TO-251 1.Gate 3.Source ORDERING INFORMATION
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UT3055
O-252
UT3055
O-251
UT3055-TM3-T
UT3055L-TM3-T
UT3055-TN3-R
UT3055L-TN3-R
UT3055-TN3-T
UT3055L-TN3-T
diode BA 158
mosfet BA 95 S
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STD5NE10
Abstract: No abstract text available
Text: STD5NE10 N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252 STripFET POWER MOSFET TYPE STD5NE10 VDSS R DS on ID 100 V < 0.4 Ω 5A TYPICAL RDS(on) = 0.32 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE TESTED 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
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STD5NE10
O-251/TO-252
O-251
STD5NE10
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Untitled
Abstract: No abstract text available
Text: VDSS ID25 IXTU05N100 IXTY05N100 High Voltage Power MOSFET = = ≤ RDS on 1000V 750mA Ω 17Ω N-Channel Enhancement Mode Avalanche Rated TO-251 G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTU05N100
IXTY05N100
750mA
O-251
05N100M
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