TO-18 TRANSISTOR Search Results

TO-18 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TO-18 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 18 V, Micropower, CMOS, Rail-to-Rail Input/Output Operational Amplifier AD8546 PIN CONFIGURATION Micropower at high voltage 18 V : 18 A typical Single-supply operation: 2.7 V to 18 V Dual-supply operation: ±1.35 V to ±9 V Low input bias current: 20 pA	Original	AD8546 AD8546ARMZ AD8546ARMZ-RL AD8546ARMZ-R7 D09585-0-1/11	PDF
2n2712 data sheet Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923 Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 ICES ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0	Original	2N2712 2N2714 2N2923 2N2924 2N2925 2N4289 2N4400 2n2712 data sheet 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923	PDF
SUP60N06-18 Abstract: SUB60N06-18 SUB60N06 Text: SUP/SUB60N06-18 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB60N06-18 Top View N-Channel MOSFET SUP60N06-18 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)	Original	SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 O-220AB O-263) O-263 S-47970--Rev. 08-Jul-96 SUP60N06-18 SUB60N06-18 SUB60N06	PDF
SUB60N06-18 Abstract: SUP60N06-18 Text: SUP/SUB60N06-18 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB60N06-18 Top View N-Channel MOSFET SUP60N06-18 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)	Original	SUP/SUB60N06-18 O-220AB O-263 SUB60N06-18 SUP60N06-18 O-220AB O-263) O-263 S-47970--Rev. 08-Jul-96 SUB60N06-18 SUP60N06-18	PDF
TRANSISTOR AH-16 Abstract: AH-16 transistor Text: Small Signal General Purpose Transistor PNP 2N2907A Small Signal General Purpose Transistor (PNP) Features • Switching and Linear Application DC to VHF Amplifier Application • RoHS Compliant TO-18 Mechanical Data TO-18, Metal can package Case: Terminals:	Original	2N2907A MIL-STD-202, TRANSISTOR AH-16 AH-16 transistor	PDF
transistor ah-16 Abstract: 2N2907A transistor PNP TRANSISTOR AH 16 Text: Small Signal General Purpose Transistor PNP 2N2907A Small Signal General Purpose Transistor (PNP) Features • Switching and Linear Application DC to VHF Amplifier Application • RoHS Compliant TO-18 Mechanical Data TO-18, Metal can package Case: Terminals:	Original	2N2907A MIL-STD-202, transistor ah-16 2N2907A transistor PNP TRANSISTOR AH 16	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET ICS83940-02 ICS83940-02 Integrated DIFFERENTIAL-TOLOW SKEW, 1-TO-18 Circuit Systems, Inc. LVCMOS/LVTTL FANOUT BUFFER LOW SKEW, 1-TO-18 DIFFERENTIAL-TO-LVCMOS/LVTTL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS83940-02 is a low skew, 1-to-18 Fanout	Original	1-TO-18 200MHz 120ps 850ps 199707558G	PDF
BSX26 Abstract: transistor BSX26 Text: BSX26 HIGH-SPEED SATURATED SWITCH DESCRIPTION The BSX26 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for switching applications up to 500 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter	Original	BSX26 BSX26 transistor BSX26	PDF
ad8657 Abstract: A2N transistor AD8500 AD8502 AD8505 AD8506 AD8541 AD8542 AD8603 ADA4505-1 Text: 18 V, Precision, Micropower CMOS RRIO Operational Amplifier AD8657 PIN CONFIGURATION Micropower at high voltage 18 V : 18 A typical Low offset voltage: 350 μV maximum Single-supply operation: 2.7 V to 18 V Dual-supply operation: ±1.35 V to ±9 V Low input bias current: 20 pA	Original	AD8657 CP-8-11 D08804-0-3/11 ad8657 A2N transistor AD8500 AD8502 AD8505 AD8506 AD8541 AD8542 AD8603 ADA4505-1	PDF
Untitled Abstract: No abstract text available Text: 18 V, Precision, Micropower CMOS RRIO Operational Amplifier AD8657 PIN CONFIGURATION Micropower at high voltage 18 V : 18 A typical Low offset voltage: 350 µV maximum Single-supply operation: 2.7 V to 18 V Dual-supply operation: ±1.35 V to ±9 V Low input bias current: 20 pA	Original	AD8657 AD8657ARMZ AD8657ARMZ-R7 AD8657ARMZ-RL D08804-0-1/11	PDF
2n3013 Abstract: No abstract text available Text: 2N3013 HIGH SPEED SATURATED SWITCHES DESCRIPTION The 2N3013 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case intended for high speed low saturation switching application up to 300 mA. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS	Original	2N3013 2N3013	PDF
bfw11 jfet Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960 Text: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72	OCR Scan	2N4859 2N4860 2N4861 BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C bfw11 jfet jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960	PDF
"P-Channel JFETs" Abstract: 2N5116 Text: This JFET Transistors Material f P-Channel JFETs National Semiconductor Copyrighted A m Switches BV qss Type No. Case Style By Its 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 Respective J174 J175 J176 J177 P1086 P1087 TO-92 TO-92 TO-92	OCR Scan	tSD113D T-39-01 "P-Channel JFETs" 2N5116	PDF
CQ417 Abstract: 2N2012 2N3558 2N4212 HEP transistors 2n3029 2n2686 Text: A U SILICON CONTROLLED RECTIFIERS O' 180mA TO-18 ro I 200mA TO-18 260mA TO-18 275mA TO-18 280mA TO-18 ON STATE CURRENT 390mA 350mA TO-18 TO-5 500mA TO-18 1.0A TO-5 2N4212 25 1.3A TO-5 2N2009 o a 2N948 30 50 2N5719 2N4109 2N5720 2N949 2N950 2N5721 2N951 2N886A	OCR Scan	180mA 200mA 260mA 275mA 280mA 390mA 350mA 500mA 2N4212 2N2009 CQ417 2N2012 2N3558 2N4212 HEP transistors 2n3029 2n2686	PDF

BF117 Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137 Text: High Voltage Transistors TYPE NO. POLA RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18	OCR Scan	BC236 O-106 BC285 BC312 BC393 BC394 BC450 O-92F BC530 O-92A BF117 BF294 BF178 BF299 BF174 BF298 BF120 BF137	PDF
n3860 Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 n3860 2N292	PDF
2N2970 Abstract: 2N2108 2N2971 2N2475 2N2846 2N2017 2N2107 2N2192A 2N2193A 2N2194A Text: TO-5 TO-18 TO-18 TO-5 TO-5 TO-18 TO-18 TO-5 TO-18 TO-18 O 1 CMIOIO O 1 r r T T IO O O O O ^ ¡8 S ” 8 o o io o Q O CD '«T io IO IO CM<M O O O O O 8 8 * * 8 O O O O O O O O C O IO ’«r -«r i- O O O O O LO co co co o CM -r-t- CVJ O O O O O O O O CO00	OCR Scan	fll3b45fl 2N2017 2N2107 2N2108 2N2192A 2N2193A 2N2194A 2N3224 2N3225 2N3248 2N2970 2N2971 2N2475 2N2846	PDF
2N2925 Abstract: 2N3405 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3405 n3860	PDF
2N2924 Abstract: 2N3856 2N3404 2N2712 2N2714 2N3856A 2n2923 2N3405 n3860 2N2711 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3856 2N3404 2N3856A 2N3405 n3860	PDF
u13t1 Abstract: UNITRODE U-66 U13T2 unijunction application note Text: U13T1-U13T2 PUTs Planar, TO-18 Hermetic FEA TU RES DESCRIPTION • • • • • • The Unitrode hermetically sealed TO-18 metal can series of programmable unijunction transistors feature blocking voltages to 100V, the highest available to designers. These	OCR Scan	U13T1-U13T2 150nA u13t1 UNITRODE U-66 U13T2 unijunction application note	PDF
UNITRODE U-66 Abstract: U13T1-U13T2 unijunction application note U13T1 U13T2 U131 Text: U13T1-U13T2 PUTs Planar, TO-18 Hermetic FEATURES DESCR IPTIO N • • • • • • The Unitrode herm etically sealed TO-18 metal can series of programmable unijunction transistors feature blocking voltages to 100V, the highest available to designers. These	OCR Scan	U13T1-U13T2 150nA UNITRODE U-66 U13T1-U13T2 unijunction application note U13T1 U13T2 U131	PDF
P50N06 Abstract: SMP60N06-18 TRANSISTOR p50n06 SMP60N06 C0530 SMP60 siliconix SMP60N06-18 Text: Tem ic SMP60N06-18 Siliconix N-Channel Enhancement-Mode Transistor, 18-mQ ros on 175 °C Maximum Junction Temperature3 Product Summary V DS (V ) •'DS(on) ( Q ) ID (A ) 60 0.018 60 See lower-cost version: SU P50N06-18 TO-22QAB o ■Jt D R A IN co n n ected to TAB	OCR Scan	SMP60N06-18 18-mQ P50N06-18 O-22QAB P-36737--Rev. P50N06 SMP60N06-18 TRANSISTOR p50n06 SMP60N06 C0530 SMP60 siliconix SMP60N06-18	PDF
2N3397 Abstract: 2N2925 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V M in.-M ax. @ I c , V c e (V) (V) Max. @ 2N2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3397 n3860	PDF
2N2926 Abstract: 2N3859A 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N3390 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type b v CEO @ 10m A V hFE V M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN NPN NPN	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3859A	PDF

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TO-18 TRANSISTOR Search Results

TO-18 TRANSISTOR Result Highlights (5)

TO-18 TRANSISTOR Datasheets Context Search

Untitled

2n2712 data sheet

SUP60N06-18

SUB60N06-18

TRANSISTOR AH-16

transistor ah-16

Untitled

BSX26

ad8657

Untitled

2n3013

bfw11 jfet

"P-Channel JFETs"

CQ417

BF117

n3860

2N2970

2N2925

2N2924

u13t1

UNITRODE U-66

P50N06

2N3397

2N2926