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    TNP 50 U Price and Stock

    Vishay Intertechnologies TNPU060350R0BZEN00

    Thin Film Resistors - SMD 1/10W 50ohms .1% 5ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TNPU060350R0BZEN00 9,898
    • 1 $2.23
    • 10 $1.61
    • 100 $1.06
    • 1000 $0.87
    • 10000 $0.87
    		Buy Now

    Vishay Intertechnologies TNPU0603500RAWEN00

    Thin Film Resistors - SMD 1/10watt 500ohms 0.05% 2ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TNPU0603500RAWEN00 4,463
    • 1 $3.5
    • 10 $2.43
    • 100 $1.58
    • 1000 $1.51
    • 10000 $1.51
    		Buy Now

    Vishay Intertechnologies TNPU06037K50BZEN00

    Thin Film Resistors - SMD 1/10W 7.5Kohms 0.1% 5ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TNPU06037K50BZEN00 4,301
    • 1 $1.54
    • 10 $1.06
    • 100 $0.857
    • 1000 $0.857
    • 10000 $0.857
    		Buy Now

    Vishay Intertechnologies TNPU12061K50BZEN00

    Thin Film Resistors - SMD 1/4W 1.5Kohms 0.1% 5ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TNPU12061K50BZEN00 4,002
    • 1 $2.93
    • 10 $2.02
    • 100 $1.32
    • 1000 $1.17
    • 10000 $1.17
    		Buy Now

    Vishay Intertechnologies TNPU1206500RAZEN00

    Thin Film Resistors - SMD 1/4watt 500 ohms 5ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TNPU1206500RAZEN00 2,778
    • 1 $3.48
    • 10 $2.45
    • 100 $1.59
    • 1000 $1.54
    • 10000 $1.54
    		Buy Now
    Find more TNP 50 U price and stock on Findchips.com

    TNP 50 U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c2555

    Abstract: TNP117 TNP156 TNP50 TNP176
    Text: ° NE W Type TNP Wet Tantalum Capacitors Non-Polar Operation { Tantalum Case Technology { Hermetically Sealed { Rugged Construction { Miniature Size { Low DCL { Low ESR { Long Active Life { Long Shelf Life GENERAL SPECIFICATIONS APPLICATIONS: Operating Temperature:


    Original     		PDF TNP406 006N1A TNP906 006N1B TNP207 006N1C TNP417 006N1F TNP256 010N1A c2555 TNP117 TNP156 TNP50 TNP176

    HD74LV1GU04AVSE

    Abstract: HD74LVU04A HD74LV1GU04A HD74LV1GU04ACME
    Text: HD74LV1GU04A Unbuffered Inverter REJ03D0065–0600Z Previous ADE-205-318D (Z Rev.6.00 Aug.29.2003 Description The HD74LV1GU04A has an unbuffered inverter in a 5 pin package. Low voltage and high-speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power


    Original     		PDF HD74LV1GU04A REJ03D0065 0600Z ADE-205-318D HD74LV1GU04A HD74LVU04A HD74LV1GU04AVSE HD74LVU04A HD74LV1GU04ACME

    HD74LV04A

    Abstract: HD74LV1G04A HD74LV1G04ACME HD74LV1G04AVSE
    Text: HD74LV1G04A Inverter REJ03D0064–0700Z Previous ADE-205-317E (Z Rev.7.00 Aug.28.2003 Description The HD74LV1G04A has an inverter in a 5 pin package. Low voltage and high-speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power consumption extends the


    Original     		PDF HD74LV1G04A REJ03D0064 0700Z ADE-205-317E HD74LV1G04A HD74LV04A HD74LV04A HD74LV1G04ACME HD74LV1G04AVSE

    HD74LV1G32A

    Abstract: HD74LV1G32ACME HD74LV1G32AVSE HD74LV32A
    Text: HD74LV1G32A 2–input OR Gate REJ03D0068–0600Z Previous ADE-205-321D (Z Rev.6.00 Aug.29.2003 Description The HD74LV1G32A has two–input OR gate in a 5 pin package. Low voltage and high-speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power consumption


    Original     		PDF HD74LV1G32A REJ03D0068 0600Z ADE-205-321D HD74LV1G32A HD74LV32A HD74LV1G32ACME HD74LV1G32AVSE HD74LV32A

    HD74LV1G86A

    Abstract: HD74LV1G86ACME HD74LV1G86AVSE HD74LV86A
    Text: HD74LV1G86A 2–input Exclusive–OR Gate REJ03D0070–0600Z Previous ADE-205-322D (Z Rev.6.00 Sep.01.2003 Description The HD74LV1G86A performs the Boolean functions Y = A ⊕ B or Y = AB + AB in positive logic. A common application is as a true / complement element. If one of the inputs is low, the other input will be


    Original     		PDF HD74LV1G86A REJ03D0070 0600Z ADE-205-322D HD74LV1G86A HD74LV1G86ACME HD74LV1G86AVSE HD74LV86A

    HD74LV00A

    Abstract: HD74LV1G00A HD74LV1G00ACME HD74LV1G00AVSE
    Text: HD74LV1G00A 2–input NAND Gate REJ03D0062–0700Z Previous ADE-205-315E (Z Rev.7.00 Aug.28.2003 Description The HD74LV1G00A has two–input NAND gate in a 5 pin package. Low voltage and high-speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power consumption


    Original     		PDF HD74LV1G00A REJ03D0062 0700Z ADE-205-315E HD74LV1G00A HD74LV00A HD74LV00A HD74LV1G00ACME HD74LV1G00AVSE

    HD74LV02A

    Abstract: HD74LV1G02A HD74LV1G02ACME HD74LV1G02AVSE HD74LV1G02AVS
    Text: HD74LV1G02A 2–input NOR Gate REJ03D0063–0600Z Previous ADE-205-316D (Z Rev.6.00 Aug.28.2003 Description The HD74LV1G02A has two–input NOR gate in a 5 pin package. Low voltage and high-speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power consumption


    Original     		PDF HD74LV1G02A REJ03D0063 0600Z ADE-205-316D HD74LV1G02A HD74LV02A HD74LV02A HD74LV1G02ACME HD74LV1G02AVSE HD74LV1G02AVS

    HD74LV1G08AVSE

    Abstract: HD74LV08A HD74LV1G08A HD74LV1G08ACME
    Text: HD74LV1G08A 2–input AND Gate REJ03D0066–0700Z Previous ADE-205-319E (Z Rev.7.00 Aug.29.2003 Description The HD74LV1G08A has two–input AND gate in a 5 pin package. Low voltage and high-speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power consumption


    Original     		PDF HD74LV1G08A REJ03D0066 0700Z ADE-205-319E HD74LV1G08A HD74LV08A HD74LV1G08AVSE HD74LV08A HD74LV1G08ACME

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. HV430 High-Voltage Ring Generator Features ► ► ► ► ► ► ► The RESET input functions as a power-on reset when connected to an external capacitor. The FAULT output indicates an overcurrent condition and is cleared after 4 consecutive cycles with no overcurrent condition. A logic low


    Original     		PDF HV430 105Vrms DSFP-HV430 A031414

    transistor equivalent table 557

    Abstract: 21045F
    Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F

    HV430

    Abstract: PWM 220v ac 75E1 HV430WG HV430WG-G MS-013 high power pulse generator with mosfet
    Text: Supertex inc. HV430 High-Voltage Ring Generator Features ► ► ► ► ► ► ► 105Vrms ring signal Output over current protection 5.0V CMOS logic control Logic enable/disable to save power Adjustable deadband in single-control mode Power-on reset Fault output for problem detection


    Original     		PDF HV430 105Vrms HV430 DSFP-HV430 A062509 PWM 220v ac 75E1 HV430WG HV430WG-G MS-013 high power pulse generator with mosfet

    Megger cbt3

    Abstract: Megger RCD testers cbt3 avo AVO International CBT3 IEC 1010-1 General Safety Requirements
    Text: - MEGGER RCD TESTER ^3 INTERNATIONAL RCD TESTER AVO A robust instrument for testing most modern types of residual current devices MEGGER CBT3 Fully tests circuit breakers with standard ratings between 6 mA and 500 mA. Intelligent testing of ‘S’ and ‘G’ type selective


    OCR Scan     		PDF 180MIDOLEFIELQ Megger cbt3 Megger RCD testers cbt3 avo AVO International CBT3 IEC 1010-1 General Safety Requirements

    TNP117

    Abstract: No abstract text available
    Text: Type TNP ^ Wet Tantalum Capacitors • MallorY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ a ■ ■ Non-Polar Operation ■ Tantalum Case Technology ■ Hermetically Sealed ■ Rugged Construction ■ Miniature Size ■ Low DCL ■ Low ESR ■


    OCR Scan     		PDF 100VNP TNP126 050N1B TNP286 050N1 TNP506 50WVNP TNP405 075N1 TNP117

    Untitled

    Abstract: No abstract text available
    Text: \ T f7 C M C-421000B9 1 ,0 4 8 ,5 7 6 x 9-BIT c m o s d y n a m ic r a m m o d u le * w N E C Electronics Inc. PRELIM IN A RY INFORMATION Description Pin Configurations The MC-421000B9 is a nibble-mode 1,048,576-word by 9-bit CMOS dynamic RAM module designed to operate


    OCR Scan     		PDF MC-421000B9 576-word //PD421001 C-421000B9

    VcO 869

    Abstract: No abstract text available
    Text: MLS9109-00881 M/A-COM Surface Mount Frequency Synthesizer CDMA 869 -894 MHz Features • Integrated VCO/PLL • Miniature SMT Package • Low Phase Noise • +5V Operation 12 Lead Package 12 11 10 9 8 annnn M/ A- COM LTD PART NO. DATE CODE Description The M LS9109-00881 synthesizer design integrates a high perfor­


    OCR Scan     		PDF MLS9109-00881 LS9109-00881 VcO 869

    BNP002-02

    Abstract: DC Power Supplies circuit BNX003-01 BNP002-03
    Text: EMI SUPPRESSION PRODUCTS/ EMI FILTERS EMIFIL EMIFIL®/EMIGUARD® ON-BOARD TYPE: (FOR DC CIRCUITS; iBIock Type EMIFIL® For Signal Lines Part Number »Mounting Hole Dimensions ^ - ¿ 1.2-7 BNP002-02 BNP002-03 Number of Circuits 2 Circuit Configu­ ration


    OCR Scan     		PDF BNP002-02 BNP002-03 BNP004-02 BNP002-02 BNP004-025-01 BNX002-01 BNX003-01 BNX005-01 DC Power Supplies circuit

    rlr20c

    Abstract: No abstract text available
    Text: DISK # E7 DASH NO DWG SIZE B DATA CONTAINED IN THIS DOCUMENT IS PROPRIETARY TO TROMPETER ELECTRONICS INC. -AND SHALL NOT BE DISCLOSED. COPIED OR USED FOR PROCUREMENT OR MANUFACTURE WITHOUT EXPRESS WRITTEN PERMISSION. D DESCRIPTION TYPE -1 TNP1-1 -2 TNPl-2-/§\ TERM WITH 2.5 BRASS CHAIN


    OCR Scan     		PDF TNP1-5-73V RLR20C rlr20c

    2953

    Abstract: IDN2934W DN2953B
    Text: *2953 AND 2 9 5 4 FULL-BRÌDGE P\VM MOTOR DRIVERS U D N 2953B FU N C T IO N A L KI.OCK DIAGRAM Tf MPERATUftC IW C üira U* 004 1 U D N 2 954W L ^ H * «I CO* ID N 2 9 5 4 W T E M P fn A T U H E IN *C t<m%m»*t+ t r it ìi ta ble Output Enable Phase low Low


    OCR Scan     		PDF DN2953B UDN295IW IDN2934W ki2/l70 2953 IDN2934W

    Untitled

    Abstract: No abstract text available
    Text: 4»k i f v«a’ SM59256A 256KByte 256K x 9 CMOS DRAM Module General Description Features The SM59256A is a high performance, 256Kbyte dynamic RAM memory module organized as 256K words by 9 bits, in a 30-pin, SIMM package. The module utilizes two CMOS 256K x 4 and one 256K


    OCR Scan     		PDF SM59256A 256KByte 256Kbyte 30-pin, 60/70/80ns 60/70/80ns)

    diodes ir

    Abstract: 1N3595 marking D03S
    Text: Micro/semi Corp. ? Tnp diocie experts -, MV SANTA A NA, CA F o r m o r e i n f o r m a ti o n call: 714 9 7 9 - 8 2 2 0 FEATURES G EN ERAL PURPOSE DIO DES • HIGH CONDUCTANCE • EXTREMELY LOW REVERSE CURRENT • ULTRA-STABLE OPERATION UP TO +150°C • VO IDLESS HERMETICALLY SEALED GLASS PACKAGE


    OCR Scan     		PDF 1N3595 MIL-S-19500-241 diodes ir 1N3595 marking D03S

    rg3j 005

    Abstract: 4948 1N5626 HP214A HP-214A
    Text: G P R 3A GLASS AMP II 3A Toper ~ 65" + 175 C T.t r K,! 300 C Type Types Typen G 3A G 3B G 3D G 3G G 3J G 3K G 3M lo V rrm (V) (1N 5624) (1N 5625) (1N5626) (1N 5627) 50 100 200 400 600 800 1000 FAST RECOVERY-GPR Topor = - 6 5 ° + 175 C — RG 1A RG 1B RG 1D


    OCR Scan     		PDF 1N5626) HP-214A rg3j 005 4948 1N5626 HP214A

    Untitled

    Abstract: No abstract text available
    Text: MFC M C-421000B8 1 ,0 4 8 ,5 7 6 X 8-BIT c m o s d y n a m ic r a m m o d u le NEC Electronics Inc. PRELIM IN A RY INFORMATION Description Pin Configurations The MC-421000B8 isa nibble-mode 1,048,576-word by 8-bit dynamic R A M module designed to operate from a


    OCR Scan     		PDF MC-421000B8 576-word /uPD421001 C-421000B8

    Untitled

    Abstract: No abstract text available
    Text: I it[7 □ □ ran P A R T NAME LD o o No. CD ro OO 00 •NT LD o U RECEPTACLE FINISH UL94V-0 \ O V " j O HOUSING RECEPTACLE O mm. MATERIAL LIQUID CRYSTAL POLYMER, GLASS FILLED 1J PHOSPHOR TE RM IN AL NATURAL WHITE) , UL94V-0 A BRONZE O0 CD s Q 22.45 (PIN/ROW- l)xPITCH =(B)


    OCR Scan     		PDF UL94V-0 SD-54883-005 SD-54883-005 EN-02J MXJ-54

    Untitled

    Abstract: No abstract text available
    Text: / . j 1N3595 Micro/semi Corp. / [☆JANS* $ Tnp diode experts SANTA ANA, CA F o r m o r e in f o r m a ti o n call: 714 9 7 9 - 8 2 2 0 FEATURES G EN ERAL PURPOSE DIO DES • HIGH CONDUCTANCE • EXTREMELY LOW REVERSE CURRENT • ULTRA-STABLE OPERATION UP TO +150°C


    OCR Scan     		PDF 1N3595 MIL-S-19500-241