FT18
Abstract: MT28F160C3 MICRON fBGA package code FT18P TN-28-18
Text: TN-28-18 3V ENHANCED+ BOOT BLOCK COMPATIBILITY TECHNICAL NOTE MICRON-INTEL 3V ENHANCED+ BOOT BLOCK FLASH COMPATIBILITY INTRODUCTION MANUFACTURER AND DEVICE ID CODES Micron’s 16Mb enhanced+ boot block flash device is a nonvolatile, electrically block-erasable flash , programmable, read-only memory containing 16,777,216
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TN-28-18
MT28F160C3
GT28F160C3.
002Ch;
4492h
4493h
FT18
MICRON fBGA package code
FT18P
TN-28-18
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28F008SA
Abstract: 28F016S5 28F016SA MT28F016S5
Text: TN-28-11 EVEN-SECTORED COMPATIBILITY TECHNICAL NOTE MICRON /INTEL® EVEN-SECTORED FLASH COMPATIBILITY This article was originally published in 1999. • Micron’s MT28F016S5 only supports the ERASE SUSPEND command; it does not support the WRITE command when in the erase suspend
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PDF
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TN-28-11
MT28F016S5
MT28F016S5,
28F016S5,
28F016SA,
28F008SA
28F016S5
28F016SA
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4490h
Abstract: MICRON fBGA package code MT28F160A3 Device ID and Configuration Codes
Text: TN-28-19 ENHANCED BOOT BLOCK COMPATIBILITY TECHNICAL NOTE MICRON-INTEL ENHANCED BOOT BLOCK FLASH COMPATIBILITY INTRODUCTION ELECTRICAL DIFFERENCES Micron’s 16Mb enhanced boot block flash device is a nonvolatile, electrically block-erasable flash , programmable, read-only memory containing 16,777,216
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Original
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PDF
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TN-28-19
MT28F160A3
GT28F160B3.
MT28F160A3.
4490h
MICRON fBGA package code
Device ID and Configuration Codes
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N281CH16
Abstract: M600 n281 tN281
Text: ÜJESTCODE SEMICONDUCTORS ITE D • GÜDITMS 7 ■ f Qg WESTCODE gß SEMICONDUCTORS ' Technical Publication TN281C Issue 1 April 1985 Converter Grade Capsule Thyristor Type N281C 680 amperes average: up to 1800 volts VRRM Ratings (Maximum values at 125°C Tj unless stated otherwise)
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OCR Scan
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N281C
TN281C
-200AB
SN151JL
N281CH16
M600
n281
tN281
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