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    TN2106 Price and Stock

    Microchip Technology Inc TN2106K1-G

    MOSFET N-CH 60V 280MA TO236AB
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    DigiKey TN2106K1-G Cut Tape 27,306 1
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    Microchip Technology Inc TN2106K1-G 27,135
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    Microchip Technology Inc TN2106N3-G

    MOSFET N-CH 60V 300MA TO92-3
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    DigiKey TN2106N3-G Bag 687 1
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    Mouser Electronics TN2106N3-G 1,054
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    Newark TN2106N3-G Bulk 1,680 1
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    Microchip Technology Inc TN2106N3-G 16,780
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    Onlinecomponents.com TN2106N3-G 1,800
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    Microchip Technology Inc TN2106K1-G.

    Mosfet, N-Channel Enhancement-Mode, 60V, 2.5 Ohm Rohs Compliant: Yes |Microchip TN2106K1-G.
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    Newark TN2106K1-G. Reel 3,000
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    Microchip Technology Inc TN2106K1

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    Microchip Technology Inc TN2106N3

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    TN2106 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN2106 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN-21065 Analog Devices Interfacing I2S Compatible Audio Devices to the ADSP-21065L Original PDF
    TN-21065L Analog Devices Using the Low Cost, High Performance ADSP21065L DSP for Digital Audio Applications Original PDF
    TN-21065L Audio Analog Devices Using the Low Cost, High Performance ADSP21065L DSP for Digital Audio Applications Original PDF
    TN2106K1 Unknown Metal oxide N-channel FET, Enhancement Type Original PDF
    TN2106K1 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2106K1-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 280MA SOT23-3 Original PDF
    TN2106N3 Unknown Metal oxide N-channel FET, Enhancement Type Original PDF
    TN2106N3 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2106N3-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 300MA TO92-3 Original PDF
    TN2106ND Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2106ND Supertex N-Channel Enhancement-Mode Vertical DMOS FET Original PDF

    TN2106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1W SOT-23

    Abstract: TN2106K1-G
    Text: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF TN2106 O-236, TN2106 DSFP-TN2106 A020508 1W SOT-23 TN2106K1-G

    TN2106K1-G

    Abstract: TO-236A 125OC TN2106 TN2106N3-G
    Text: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF TN2106 DSFP-TN2106 A091208 TN2106K1-G TO-236A 125OC TN2106 TN2106N3-G

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability


    Original     		PDF TN2106 DSFP-TN2106 B080913

    N1L SOT23

    Abstract: 1W SOT-23 marking n1l TN2106 TN2106K1 TN2106N3 TN2106ND
    Text: TN2106 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die N1L❋ 60V 2.5Ω 2.0V TN2106K1 TN2106N3 TN2106ND where ❋ = 2-week alpha date code


    Original     		PDF TN2106 OT-23: O-236AB* TN2106K1 TN2106N3 TN2106ND OT-23. N1L SOT23 1W SOT-23 marking n1l TN2106 TN2106K1 TN2106N3 TN2106ND

    Untitled

    Abstract: No abstract text available
    Text: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain


    Original     		PDF TN2106 DSFP-TN2106 A091208

    mosfet cross reference

    Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
    Text: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G


    Original     		PDF 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G 2N6661 mosfet cross reference bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross

    Untitled

    Abstract: No abstract text available
    Text: TN2106N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)300m @Temp (øC)150# IDM Max (@25øC Amb)1.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55


    Original     		PDF TN2106N3 Junc-Case125

    TN2106

    Abstract: No abstract text available
    Text: Supertex inc. TN2106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) TN2106 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description


    Original     		PDF TN2106 TN2106 A031610

    Untitled

    Abstract: No abstract text available
    Text: TN2106K1 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)280m @Temp (øC)150# IDM Max (@25øC Amb)800m @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)360m# Minimum Operating Temp (øC)-55


    Original     		PDF TN2106K1 Junc-Case200

    marking n1l

    Abstract: mos n-channel SOT-23 TN2106 TN2106K1 TN2106N3 TN2106ND sot-23 MARKING CODE GS 5
    Text: TN2106 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die N1L❋ 60V 2.5Ω 2.0V TN2106K1 TN2106N3 TN2106ND where ❋ = 2-week alpha date code


    Original     		PDF TN2106 OT-23: O-236AB* TN2106K1 TN2106N3 TN2106ND OT-23. marking n1l mos n-channel SOT-23 TN2106 TN2106K1 TN2106N3 TN2106ND sot-23 MARKING CODE GS 5

    TN2106

    Abstract: No abstract text available
    Text: TN2106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) TN2106 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain


    Original     		PDF TN2106 TN2106 A022009

    marking n1l

    Abstract: MOS 20V 0.5A n1l sot-23 TN2106K1 TN2106ND MARKING CODE 028a sot 23 marking 8A sot-23 marking codes N1l transistors sot-23 TN2106 TN2106N3
    Text: TN2106 TN2106 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die N1L❋ 60V 2.5Ω 1.6V TN2106K1 TN2106N3 TN2106ND


    Original     		PDF TN2106 OT-23: O-236AB* TN2106K1 TN2106N3 TN2106ND OT-23. marking n1l MOS 20V 0.5A n1l sot-23 TN2106K1 TN2106ND MARKING CODE 028a sot 23 marking 8A sot-23 marking codes N1l transistors sot-23 TN2106 TN2106N3

    SAG1

    Abstract: EL7156
    Text: TC253SPD 680āxā500 PIXEL CCD IMAGE SENSOR SOCS062B – JANUARY 2001 – REVISED MAY 2002 D Very Low Noise, High Sensitivity, D D D D D D D D D DUAL-IN-LINE PACKAGE TOP VIEW ODB 1 12 IAG1 IAG2 2 11 SAG1 SAG2 3 10 SUB SRG1 4 9 ADB SRG2 5 8 NC CMG 6 7 Vout


    Original     		PDF TC253SPD SOCS062B TX253SPD-30 TX253SPD-31 TX253SPD-B0 SAG1 EL7156

    TN0604N3

    Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
    Text: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -


    Original     		PDF 2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332 AP0332 VN2110K1 BSS123 DN2535 TN0604N3 HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex

    ctx02-16076

    Abstract: CTX02 CTX02 16076 ultrasound TRANSFORMER P-Channel Depletion Mosfets pwm lm2903 logic SOT-23 Depletion Mode mosfet TN2106K HV738DB1 HV748DB1
    Text: Supertex inc. AN-H59 Application Note High Voltage DC/DC Converter for Supertex Ultrasound Transmitter Demoboards By Afshaneh Brown, Applications Engineer, and Jimes Lei, Applications Manager Introduction The Supertex AN-H59DB1 demoboard is a high voltage


    Original     		PDF AN-H59 AN-H59DB1 AN-H59DB1 ctx02-16076 CTX02 CTX02 16076 ultrasound TRANSFORMER P-Channel Depletion Mosfets pwm lm2903 logic SOT-23 Depletion Mode mosfet TN2106K HV738DB1 HV748DB1

    TN2524

    Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
    Text: Supertex inc. Selector Guide N-Channel Enhancement Mode MOSFETs BVDSS Device V RDS(ON) max ID(ON) min (Ω) CISS max (A) (pF) VGS(TH) max (V) Package Options Application Notes 2N6660 60 3.0 1.5 50 2.0 3-Lead TO-39 (N2) - 2N6661 90 4.0 1.5 50 2.0 3-Lead TO-39 (N2)


    Original     		PDF 2N6660 2N6661 2N7000 2N7002 OT-23 2N7008 TN0104 TN0106 TN0110 VN2406 TN2524 SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110

    CCM TEXAS

    Abstract: peltier driver Peltier element image intensifier quantum efficiency data odb2 peltier cooler security ir sensor 1SS193 1SS226 CM500
    Text: TC253SPDĆB0 680 x 500 PIXEL IMPACTRON CCD IMAGE SENSOR JULY 2003 − SOCS084 D Very Low Noise, High Sensitivity D D D D D D D D D D D D D Electronically Variable High Resolution, 1/3-in Format, Solid State Charge-Coupled Device CCD Frame Transfer Image Sensor for Black and White,


    Original     		PDF TC253SPDB0 SOCS084 CCM TEXAS peltier driver Peltier element image intensifier quantum efficiency data odb2 peltier cooler security ir sensor 1SS193 1SS226 CM500

    EL7156

    Abstract: No abstract text available
    Text: TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 x x x x x x x x ፸፺ ᎚᎜ᎉ ፸፼ ᎚ᎈᎎ፹ ᎝᎖᎜᎛ ፸፷ ᎚᎜ᎉ ፸፹ ፸፽ ᎚ᎈᎎ፸ ᎀ ፸፻ ᎝ᎊ᎓ᎋ ፸፾ ᎗፯፴፰


    Original     		PDF TC247SPD-B0 SOCS091 EL7156

    VP1304N2

    Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
    Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND


    OCR Scan     		PDF 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 VP1304N2 TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2

    TN2106ND

    Abstract: No abstract text available
    Text: TN2106 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: b v dss/ ^DS ON V(3S(tfi) BVdgs (max) (max) TO-236AB* TO-92 Die N 1L* 60V 2 .5 0 2.0V TN2106K1 TN2106N3


    OCR Scan     		PDF TN2106 O-236AB* TN2106K1 OT-23: TN2106N3 TN2106ND OT-23. TN2106ND

    Untitled

    Abstract: No abstract text available
    Text: TN2106 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: b v dss/ R d S ON ^GS(th) b v dgs (max) (max) TO-236AB* TO-92 Die 60V 2.5Q. 2.0V TN2106K1 TN2106N3 TN2106ND


    OCR Scan     		PDF TN2106 OT-23: O-236AB* TN2106K1 TN2106N3 TN2106ND

    Untitled

    Abstract: No abstract text available
    Text: TN2106 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package P rod uct m arking fo r SOT-23: b v dss/ ^DS ON ^GS(th) BVdgs (max) (max) TO-236AB* TO-92 Die 60V 2.5Q 1.6V TN 2106K1 T N 21 06 N 3 T N 21 06 N D


    OCR Scan     		PDF TN2106 O-236AB* 2106K1 OT-23: OT-23. TN2106

    n1l sot-23

    Abstract: MARKING CODE N1l sot 23
    Text: ^ TN2106 . Supertax ine N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Product marking for SOT-23: Order Number / Package b v dss / ^D S O N ^ G S flh ) b v dgs (max) (max) SOT-231 TO-92 N1L* 60V 2.5a 1.6V


    OCR Scan     		PDF TN2106 OT-231 TN2106K1 TN2106N3 OT-23: n1l sot-23 MARKING CODE N1l sot 23

    Backlight Drivers

    Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
    Text: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs


    OCR Scan     		PDF HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 SR036 SR037 HV9904 HV9100 HV9102 HV9103 Backlight Drivers P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter