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    TN0201KL Search Results

    TN0201KL Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TN0201KL Vishay Siliconix MOSFETs Original PDF
    TN0201KL Vishay Telefunken N-Channel 20-V (D-S) MOSFET Original PDF
    TN0201KL-E3 Vishay Transistor Mosfet N-CH 20V 0.64A 3TO-226AA Original PDF
    TN0201KL-TR1 Vishay N-Channel 20-V (D-S) MOSFET Original PDF
    TN0201KL-TR1-E3 Vishay Transistor Mosfet N-CH 20V 0.64A 3TO-226AA T/R Original PDF

    TN0201KL Datasheets Context Search

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    TN0201KL

    Abstract: No abstract text available
    Text: SPICE Device Model TN0201KL Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF TN0201KL 18-Jul-08 TN0201KL

    Untitled

    Abstract: No abstract text available
    Text: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V APPLICATIONS TN0201K TN0201KL 0.42


    Original     		PDF TN0201K/TN0201KL TN0201K TN0201KL O-226AA O-236 OT-23) 0201KL TN02llectual 18-Jul-08

    TN0201K

    Abstract: TN0201KL TN0201KL-TR1 marking code vishay SILICONIX to-236
    Text: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V TN0201K TN0201KL 0.42 0.64 0.35


    Original     		PDF TN0201K/TN0201KL TN0201K TN0201KL O-236 OT-23) O-226AA 0201KL S-40245--Rev. 16-Feb-04 TN0201K TN0201KL TN0201KL-TR1 marking code vishay SILICONIX to-236

    TN0201K

    Abstract: TN0201KL TN0201KL-TR1 marking code vishay SILICONIX to-236
    Text: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V TN0201K TN0201KL 0.42 0.64 0.35


    Original     		PDF TN0201K/TN0201KL TN0201K TN0201KL O-236 OT-23) O-226AA 0201KL 08-Apr-05 TN0201K TN0201KL TN0201KL-TR1 marking code vishay SILICONIX to-236

    TN0201K

    Abstract: TN0201KL TN0201KL-TR1 MOSFET SOT-23
    Text: TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V D−S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS Min (V) 20 D TrenchFETr Power MOSFET ID (A) rDS(on) DS( ) Max (W) VGS(th) (V) 1.0 @ VGS = 10 V 1.4 @ VGS = 4.5 V TN0201K TN0201KL 0.42 0.64 0.35


    Original     		PDF TN0201K/TN0201KL TN0201K TN0201KL O-236 OT-23) O-226AA 0201KL 18-Jul-08 TN0201K TN0201KL TN0201KL-TR1 MOSFET SOT-23

    TN0201K

    Abstract: 4327 AN609 TN0201KL
    Text: TN0201KL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF TN0201K TN0201KL AN609 TN0201KL TN0201K 04-Jan-08 4327