74ls166
Abstract: 74ls gate symbols 74LS TTL 74ls166 datasheet 74LS LS166 SN54LSXXXJ SN74LSXXXD SN74LSXXXN
Text: SN54/74LS166 8-BIT SHIFT REGISTERS The SN54L/ 74LS166 is an 8-Bit Shift Register. Designed with all inputs buffered, the drive requirements are lowered to one 54/ 74LS standard load. By utilizing input clamping diodes, switching transients are minimized and
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SN54/74LS166
SN54L/
74LS166
LS166
74ls gate symbols
74LS TTL
74ls166 datasheet
74LS
SN54LSXXXJ
SN74LSXXXD
SN74LSXXXN
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74LS166
Abstract: 74LS LS166 SN54LSXXXJ SN74LSXXXD SN74LSXXXN parallel to serial conversion
Text: SN54/74LS166 8-BIT SHIFT REGISTERS The SN54L/ 74LS166 is an 8-Bit Shift Register. Designed with all inputs buffered, the drive requirements are lowered to one 54 / 74LS standard load. By utilizing input clamping diodes, switching transients are minimized and
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SN54/74LS166
SN54L/
74LS166
LS166
74LS
SN54LSXXXJ
SN74LSXXXD
SN74LSXXXN
parallel to serial conversion
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LS166
Abstract: 74LS SN74LS166 SN74LS166D SN74LS166N
Text: SN74LS166 8-Bit Shift Registers The SN74LS166 is an 8-Bit Shift Register. Designed with all inputs buffered, the drive requirements are lowered to one 74LS standard load. By utilizing input clamping diodes, switching transients are minimized and system design simplified.
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SN74LS166
SN74LS166
LS166
r14153
SN74LS166/D
74LS
SN74LS166D
SN74LS166N
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SN74LS166
Abstract: 74LS LS166 SN74LS166D SN74LS166DR2 SN74LS166M SN74LS166MEL SN74LS166N
Text: SN74LS166 8-Bit Shift Registers The SN74LS166 is an 8-Bit Shift Register. Designed with all inputs buffered, the drive requirements are lowered to one 74LS standard load. By utilizing input clamping diodes, switching transients are minimized and system design simplified.
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SN74LS166
SN74LS166
LS166
r14525
SN74LS166/D
74LS
SN74LS166D
SN74LS166DR2
SN74LS166M
SN74LS166MEL
SN74LS166N
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SN74LS166d
Abstract: sn74ls166
Text: SN74LS166 8−Bit Shift Registers The SN74LS166 is an 8-Bit Shift Register. Designed with all inputs buffered, the drive requirements are lowered to one 74LS standard load. By utilizing input clamping diodes, switching transients are minimized and system design simplified.
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SN74LS166
LS166
SN74LS166/D
SN74LS166d
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148B
Abstract: No abstract text available
Text: SN74LS166 8-Bit Shift Registers The SN74LS166 is an 8-Bit Shift Register. Designed with all inputs buffered, the drive requirements are lowered to one 74LS standard load. By utilizing input clamping diodes, switching transients are minimized and system design simplified.
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SN74LS166
LS166
20-Pin
148B
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1S2074
Abstract: 74LS HD74LS166A HD74LS166AP PRDP0016AE-B hd74ls166
Text: HD74LS166A 8-bit Shift Register REJ03D0450-0400 Rev.4.00 May 10, 2006 The inputs are buffered to lower the drive requirements to one series 74 or 74LS standard load, respectively. Input clamping diodes minimize switching transients and simplify system design. This parallel in or serial-in, serial-out shift
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HD74LS166A
REJ03D0450-0400
1S2074
74LS
HD74LS166A
HD74LS166AP
PRDP0016AE-B
hd74ls166
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1S2074
Abstract: 74LS HD74LS166A HD74LS166AP PRDP0016AE-B
Text: HD74LS166A 8-bit Shift Register REJ03D0450–0300 Rev.3.00 Jul.15.2005 The inputs are buffered to lower the drive requirements to one series 74 or 74LS standard load, respectively. Input clamping diodes minimize switching transients and simplify system design. This parallel in or serial-in, serial-out shift
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HD74LS166A
REJ03D0450
1S2074
74LS
HD74LS166A
HD74LS166AP
PRDP0016AE-B
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DM54
Abstract: DM54166 DM54166J J16A
Text: DM54166 8-Bit Parallel In/Serial Out Shift Registers General Description These parallel-in or serial-in, serial-out shift registers feature gated clock inputs and an overriding clear input. All inputs are buffered to lower the drive requirements to one normalized load, and input clamping diodes minimize switching
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DM54166
DM54
DM54166
DM54166J
J16A
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ZTK33B
Abstract: ZTK33
Text: STABILIZER DIODES ZTK11 THRU ZTK33 CASE TYPE: D0-204AH film DO-35 Type Operating voltage a tlz -S m A 111 VZV Dynamic resistance at Ig = 5mA Permissable operating current atTamb>45«C<’' tn a 12 max. mA ZTK11 10. 12 10(<25) ZTK18 16 .20 11(<25) 19
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ZTK11
ZTK33
D0-204AH
DO-35)
ZTK18
ZTK22
ZTK27
ZTK33A
ZTK33B
ZTK33
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23G102k
Abstract: 15G121K 15g102k tnr g 180k 12G102K tnr 15g 471k varistor 152k
Text: METAL OXIDE VARISTORS TN R Marcon TNR Metal Oxide Varistors are voltage dependent, symmetrical resistors which perform in a manner similar to back-to-back zener diodes in circuit protective functions and offer advantages in performance and economics. When ex
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tnr g 180k
Abstract: tnr g 471k TNR G Series
Text: METAL OXIDE VARISTORS TNR Marcon TNR Metal Oxide Varistors are voltage dependent, symmetrical resistors which perform in a manner similar to back-to-back zener diodes in circuit protective functions and offer advantages in performance and economics. When ex
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600/2Times
tnr g 180k
tnr g 471k
TNR G Series
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f7555
Abstract: 4062A 4072A 4063a 1N408 zener 2w 1n 4074a 40B1A
Text: 1N4057 thru 1N4085A Microsemi Corp. ' The âtoôe experts SANTA ANA, CA SCOTTSDALE, AZ 1 For more information call: 602 941-6300 FEATURES HIQH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES • ZENER V01TAGE 12.4V to 200V . TEMPERATURE COEFFICIENT RANGE: 0 .0 0 5 % /°C to 0.002% / ° C
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1N4057
1N4085A
V01TAGE
1N4066
1N4070
1N4073
1N4074
1N4077
1N4057,
f7555
4062A
4072A
4063a
1N408
zener 2w 1n
4074a
40B1A
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TF-853
Abstract: TF-874 TF-823 tf886 TF-886 TF-899 TF823 tf844 TF-835 814a
Text: NARROWBAND SP8T SWITCH REFLECTIVE AND ABSORPTIVE 0.02-18 GHz SERIES TF-8/TN-8-A r- GENERAL INFORMATION: Series TF-8 and TN-8-A switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes placed in either series, series-shunt, or shunt configurations produce excellent elec
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THC-4413
Abstract: sj 2907 4148 diode diode st 4148 TRANSISTOR 4148 THC-2894 THC-5818 THC-2369 THC-2369A THC-2945
Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 1 0 0 % Probed Parameters TYPE D E S C R IP T IO N BVoo M in . Ic V o lts @ (mA) B V cto M in . Ic V o lts @ (mA) M jn. V o lts B V ebo *5 0 1 50 @ Ic
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THC-95
THC-2894
THC4258
THC-4258A
THC-A-20
THC-2944
THC-2945
THC-4413
sj 2907
4148 diode
diode st 4148
TRANSISTOR 4148
THC-5818
THC-2369
THC-2369A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA CURRENT REGULATOR DIODES CURRENT REGULATOR DIODES Field-effect current regulator diodes are c ircu it elem ents that provide a current essentially independent o f voltage. These diodes are especially designed for maximum impedance over the operating range. These devices may be used in parallel to
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1N5283
1N5314
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Untitled
Abstract: No abstract text available
Text: S AN K E N ELECTRIC CO LT3> 3SE m D DQGGSS7 7 E3SAKJ '? mAVALANCHE DIODES ü Izsm A Mom entary Tstg fC ) 3.0 —40~+130 1.0 —40~ +150 SO 130 R 2M R Y 23 200 R Y 24 400 0.1 IfKHJ 0*A) 5 20 3 10 50 3 GSC218 180 3 G SC 2 35 350 GSC315 150 GSC318 180 Vz (V)
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GSC218
GSC315
GSC318
GSC215
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Untitled
Abstract: No abstract text available
Text: SIEM EN S Silicon Switching Diode Array BAW 101 • Electrically insulated high-voltage medium-speed diodes Type Marking Ordering Code tape and reel BAW 101 JP s Q62702-A712 Pin Configuration Package1) SOT-143 - - 0 - ^ - 0 O
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Q62702-A712
OT-143
EHA0700S
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Untitled
Abstract: No abstract text available
Text: 13.6- Hyper Fast IGBT Devices with a Fast Reverse Recovery Diode: IGBT Characteristics: Vces Part Number SHSMG1028 SHSMG1029 Volts 500 600 Continuous Collector Current lc @ Tc=90°C Continuous Collector Current lc @ T e=25°C Amps 24 24 Amps 48 48 Pulsed Collector
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SHSMG1028
SHSMG1029
SHSMG1048
SHSMG1049
SHSMG1050
I--r200±
003-J
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T-LVA62A
Abstract: T-LVA368A T-LVA3100A T-LVA47A 160SG zener diodes 5.1a diode marking 356A Scans-00144640 T-LVA351A
Text: S G s ^ c S —T H O M S O N 59C 02508 d I D o a a s ü a D T-LVA 47 A .-*• T-LVA 100 A T-LVA 347 A — T-LVA 3100 A T-LVA 450 A — T-LVA 498 A O THOMSON'CSF DIVISION SEMICONDUCTEURS ’ LOW VOLTAGE AVALANCHE ZENEB DIODES DIODES ZENERA FAIBLE TENSION D'AVALANCHE
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DO-36
CB-102)
T-LVA62A
T-LVA368A
T-LVA3100A
T-LVA47A
160SG
zener diodes 5.1a
diode marking 356A
Scans-00144640
T-LVA351A
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MH73
Abstract: 2kec
Text: S EM IC O N D U C T O R MBRFIOIOOCT TECHNI CAL DATA S C H O T T K Y BARRI ER T YP E DIODE SW ITC H IN G M O D E POW ER SUPPLY A PPLICATIO N. C O N V E R T E R & CH O PP E R A PPLICATION. FEA T U RE S • Average Output Rectified Current DIM : Io=10A. • Repetitive Peak Reverse Voltage
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-30A/j
MBRF10100CT
MH73
2kec
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Untitled
Abstract: No abstract text available
Text: LED Lamp Part Numbering System New LED type designation system The range of Siemens light emitting diodes has received new type designations and ordering codes. The new type designation now indicates the most im portant characteristics of an LED. LED type designation system
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OT-23
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Untitled
Abstract: No abstract text available
Text: Products Typ* Z E N E R 1 . PRODUCTS ZENER DIODE 2 . TYPE P T Z 3 . APPLICATION Voltage regulation PT2 S e r i e s D I O D E S e r i e s ?5fY\ PACKAGE TTßäG * TfìPirìG C ò O £ 3 k s j R.BBL 4 . FEATURES Surface nount devices 5 . ABSOLUTE MAXIMUM RATINGS Ta=25*C
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400asured
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215071
Abstract: 213541
Text: RENAK» flANUf A C T U R I N G CO M7E D • 7b?10E7 QÜÜÜ1Ô1 463 «REN INDUSTRIAL DIODES INDUSTRIAL 100V STRAIGHT LEAD 25 AMP #212540 #212541 Pos. 100 volt PRV, 25 amp l0, 1 milliamp lR Neg. 100 volt PRV, 25 amp l0, 1 milliamp lR #212570 #212571 Pos. 100 volt PRV, 25 amp l0, 100 microamp iR
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0QD0181
592-i
215071
213541
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