Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GSC318 Search Results

    GSC318 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GSC318 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF

    GSC318 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)


    Original
    PDF AG01A AG01Y AG01Z FMB-29 FMB-29L FMB-32 EL02Z SFPB-66 SFPB-69 SFPB-72

    SE135N

    Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
    Text: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668


    Original
    PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE135N SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N

    HVR-1X 7 diode

    Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
    Text: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original
    PDF O01EC0 TM1061S-L TM1061S-R TM1241S-L TM1241S-R TM1261S-L TM1261S-R TM1641P-L TM1641S-L TM1661P-L HVR-1X 7 diode STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159

    diode ry24

    Abstract: UX-C2B diode zener RM25 FMPG5F fmgg2s FMPG2F RY24 RBV150S zener 3B2 RM25 zener diode
    Text: Selection Guide Rectifier Diodes Type No. I F(AV) (A) VRM(V) 40 50 60 100 200 400 600 800 1,000 I FSM (A) SFPM-5* 0.9 2 4 30 SFPM-6* 1.0 2 4 45 AM01* 1.0 Z ― A 35 EM01* 1.0 Z ― A 45 EM 1* 1.0 Z ― A 45 EM 1* 1.0 EM 2* 1.2


    Original
    PDF RZ1100 RZ1125 RZ1150 RZ1175 RZ1200 EZ0150 PZ127 PZ227 PZ427 PZ628 diode ry24 UX-C2B diode zener RM25 FMPG5F fmgg2s FMPG2F RY24 RBV150S zener 3B2 RM25 zener diode

    HVR 1X 7

    Abstract: hvr-1x 7 UX-C2B HVR-1X -7 HVR-1X microwave SK HVR-1X HVR-1X 9 HVR-1X SK HVR-1X 6 HVR-1X-4
    Text: 5-9. High Voltage Rectifier Diodes Ta = 25°C Absolute Maximum Ratings Type No. SHV-02 SHV-03S SHV-03 -10 -12 -14 -16 -20 -24 SHV-06EN -08EN -10EN -12EN SHV-08DN -10DN -12DN VRM IF (AV) IFSM TC (kV) (mA) * 2 3 3 10 12 2.0 14 16 20 24 6 8 10 12 2.0 8 10 12


    Original
    PDF HVR-1X-40B SHV-02 SHV-03S SHV-03 SHV-06EN -08EN 27min HVR 1X 7 hvr-1x 7 UX-C2B HVR-1X -7 HVR-1X microwave SK HVR-1X HVR-1X 9 HVR-1X SK HVR-1X 6 HVR-1X-4

    Untitled

    Abstract: No abstract text available
    Text: GaAs Schottky Barrier Diodes Electrical Characteristics(Ta=25℃) Absolute Maximum Ratings Parameter 50Hz Half-cycle Sinewave Single Shot max per element IF (A) 5.0 20 0.9 2.5 1.0 14.0 50 0.9 7.0 3.0 180 −40 to +150 35 7.0 0.9 t /T=1/3 3 t /T=1/6


    Original
    PDF GSC215/218 GSF18R GSC318 GSC315 GSC218 GSC215

    HVR-1X 7 diode

    Abstract: hvr 1X 7 diode HVR-1X diode HVR-1X 6 diode HVR 1X 7 HVR-1X HVR-1X 7 FMCG2 HVR-1X -7 hvr 1X 3 diode
    Text: Selection Guide Rectifier Diodes Type No. SFPM-5 * SFPM-6 * AM01 * EM01 * EM 1 * EM 2 * RM 1 * RM 11 * RM 10 * RM 2 * RO 2 * RM 3 * RM 4 * RM 4 M * FMM-2 * FMM-3 * RBV-40 * RBV-40 M * RBV-40 H * RBV-60 * RBV-60 H * RBV-130 * RBV-150 * RBV-150 S * RBV-250 *


    Original
    PDF RBV-40 RBV-40 RBV-60 RBV-60 RBV-130 RBV-150 RBV-150 RBV-250 RBA-40 HVR-1X 7 diode hvr 1X 7 diode HVR-1X diode HVR-1X 6 diode HVR 1X 7 HVR-1X HVR-1X 7 FMCG2 HVR-1X -7 hvr 1X 3 diode

    HVR-1X 7 diode

    Abstract: FMS-3FU HVR-1X 6 diode MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR FMPG5F rk36 diode rk14 diode HVR-1X 7 diode RU 3AM HVR-1X diode
    Text: DIODES RECTIFIER DIODES Absolute Maximum Ratings Type No. VRM IO IFSM V (A) (A) Elec. Char. at 25°C VF 200 SFPM-54 400 SFPM-62 200 SFPM-64 Abs. Max. Ratings Type No. Max. @ IF(µA) (V) SFPM-52 IR 0.9 30 1.0 1.0 45 0.98 (A) VRM IO IFSM (V) (A) (A) Max. 10


    Original
    PDF SFPM-54 SFPM-62 SFPM-64 SFPM-52 AM01Z AM01A EM01Z EM01A HVR-1X 7 diode FMS-3FU HVR-1X 6 diode MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR FMPG5F rk36 diode rk14 diode HVR-1X 7 diode RU 3AM HVR-1X diode

    HVR-1X 7 diode

    Abstract: hvr 1X 3 diode HVR-1X 7 FMPG2F HVR-1X diode HVR-1X 6 diode HVR-1X -7 HVR-1X 6 fmp2fu RBA-404B
    Text: CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in


    Original
    PDF SFPB-66 SFPB-69 SFPB-72 SFPB-74 VR-60SS SFPB-76 VR-61SS HVR-1X 7 diode hvr 1X 3 diode HVR-1X 7 FMPG2F HVR-1X diode HVR-1X 6 diode HVR-1X -7 HVR-1X 6 fmp2fu RBA-404B

    Untitled

    Abstract: No abstract text available
    Text: GaAs Schottky Barrier Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter max per element max per element IF (A) max per element 20 0.9 2.5 1.0 GSC315 150 180 GSF18R 180 (ns) dI F /dt= IF /IRP 100A /µs (mA) –40 to +150 0.9


    Original
    PDF GSC215/218 GSF18R GSC318 GSC315 GSC218 GSC215

    Untitled

    Abstract: No abstract text available
    Text: S AN K E N ELECTRIC CO LT3> 3SE m D DQGGSS7 7 E3SAKJ '? mAVALANCHE DIODES ü Izsm A Mom entary Tstg fC ) 3.0 —40~+130 1.0 —40~ +150 SO 130 R 2M R Y 23 200 R Y 24 400 0.1 IfKHJ 0*A) 5 20 3 10 50 3 GSC218 180 3 G SC 2 35 350 GSC315 150 GSC318 180 Vz (V)


    OCR Scan
    PDF GSC218 GSC315 GSC318 GSC215

    GSC318

    Abstract: gsc3 GSC218
    Text: SERIES GS GaAs POWER SCHOTTKX DIODES Providing the ultimate in high-voltage, high-trequency rectification effeciency, gallium-arsenide Schottky diodes are a major improvement in rectifier technology. Gallium-arsenide Schottky diodes are essentially free of storage


    OCR Scan
    PDF GSC215 GSC218 GSC235 GSC315 GSC318 gsc3

    SE110N

    Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
    Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)


    OCR Scan
    PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE110N A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode

    IR0A

    Abstract: RY24
    Text: 3SE T> E3 7 ^ 0 7 4 1 DD00SS3 T S A K J “P 0 3 - 0 1 SANKEN ELECTRIC CO LTD !RECTIFIER. DIODES BRIDGE TYPE qa=25°C) M a xim u m ra tin g s (V) RB-150 100 -152 200 -154 400 -156 600 800 600 R BA-401 100 -4 02 200 R B V -404 400 -4 0 6 600 -4 0 8 800


    OCR Scan
    PDF DD00SS3 RB-150 LB-156 BA-401 -406M -406H RBV-601 RBV-1506 IR0A RY24