induction cooker fault finding diagrams
Abstract: MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200
Text: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when
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Z8115
MIL-HDBK-217E
S57-1
induction cooker fault finding diagrams
MG100J2YS1
nikkei S-200 grease
TOSHIBA IGBT MG50J2YS1
MG50J2YS1
induction cooker st
induction cooker MOSFET IGBT DRIVERS THEORY
nikkei jointal
grease nikkei S-200
NIKKEI JOINTAL 200
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TLN205
Abstract: "Smoke Sensor"
Text: TOSHIBA TLN205 TOSHIBA INFRARED LED G a A M s INFRARED EMITTER TLN205 Unit in mm INFRARED LED FOR PHOTO SENSOR SMOKE SENSOR OPTO-ELECTRONIC SWITCH • High radiant intensity : Ie = 40mW / sr TYP. • Excellent linearity of radiant intensity and modulation by pulse
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TLN205
940mm)
500Hz
200Hz
100ju
TLN205
"Smoke Sensor"
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TLN205
Abstract: No abstract text available
Text: TOSHIBA TLN205 TOSHIBA INFRARED LED GaAM s INFRARED EMITTER T LN 2 Q 5 Unit in mm INFRARED LED FOR PHOTO SENSOR SMOKE SENSOR OPTO-ELECTRONIC SWITCH • High radiant intensity ; I e = 40mW / sr TYP. • Excellent linearity of radiant intensity and modulation by pulse
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TLN205
940mm)
Ta--25
TLN205
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Untitled
Abstract: No abstract text available
Text: GaAIAs Infrared E m itter TLN205 A pplications • Remote Control Smoke Sensor • Optical Switch Features • High Radiant Intensity : lE= 40mW I sr TYP. • Capable of Pulse Operation • 1.5 Times Better Coupling Ratio with Si Detectors Over Standard GaAs (940mm) Emitters
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TLN205
940mm)
98-4LEDS
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLN205 TOSHIBA INFRARED LED GaA€As INFRARED EMITTER TLN205 INFRARED LED FOR PHOTO SENSOR U n it in mm SMOKE SENSOR OPTO-ELECTRONIC SWITCH • • • High radiant intensity : I]?; = 40mW / sr TYP. Excellent linearity of radiant intensity and modulation by pulse
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TLN205
940mm)
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TLP805
Abstract: TLP806 TLP834 TLRA280
Text: lü.General Index TYPE No. TLN101A TLN102 TLN103A TLN104 TLN104 LB TLN105B TLN107A TLN108 TLN110 TLN113 TLN115A TLN117 TLN119 TLN201 TLN203 TLN205 TLN208 TLN210 TLN211 TLN212 TLN221 TLN222 TLN223 TLN224 TLN225 TLN226 TLN227 TLP507A TLP800A TLP801A TLP802
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TLN101A
TLN102
TLN103A
TLN104
TLN105B
TLN107A
TLN108
TLN110
TLN113
TLP805
TLP806
TLP834
TLRA280
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Untitled
Abstract: No abstract text available
Text: NPN Photo Transistor TPS611 A pplications • Photo Sensor • Photoelectric Counter • Various Kinds of Readers • Position Detection • Remote Controls Features • 05mm Epoxy Resin Package • High Sensitivity: lL= 120pA Typ. • Half Value Angle: 01/2= ± 8° (Typ.)
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TPS611
120pA
TLN110
TLN205
98-4LEDS
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TLN110
Abstract: TLN205 TPS611
Text: TOSHIBA TPS611 TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS61 1 Unit in mm FOR PHOTO SENSOR PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION • • • • • <f>5mm epoxy resin package black High sensitivity :I l = 12(V*A(TYP.)
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TPS611
TLN110
TLN205
TLN110
TPS611
IL-99
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TSHA3400
Abstract: "Photo Interrupter" sharp 306 transistor Infrared emitter TELEFUNKEN infrared "Photo Interrupter" 380 transistor LTR-536AD LTE-302-M LTE5238A
Text: CROSS REFFERENCE GUIDE HOfŒYWELL LITON Infrared Emitter SHARP LITON Infrared Emitter SEP8505/8525 LET-209 GL480 LTE-306 SEP8506/8526 LTE-302-M G L360/380 LTE-4206 GL537 LTE-3270 Photo Transistor SEP8405/8425 LTR-209 GL527 LTE-3271T SEP8406/8426 LTR-301 GL538
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SEP8505/8525
SEP8506/8526
SEP8405/8425
SEP8406/8426
SEP8403
HOA708
HOA0860
HOA0870
LTR-209
LTR-301
TSHA3400
"Photo Interrupter" sharp
306 transistor
Infrared emitter
TELEFUNKEN infrared
"Photo Interrupter"
380 transistor
LTR-536AD
LTE-302-M
LTE5238A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPS611 TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS61 1 FOR PHOTO SENSOR U nit in mm PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION • 05mm epoxy resin package black • High sensitivity • H alf value angle : d±= ± 8° (TYP.)
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TPS611
TPS61
TLN110
TLN205
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Untitled
Abstract: No abstract text available
Text: NPN Photo Transistor TPS610 A pplications • PhotoSensor • Photoelectric Counter • Various Kinds of Readers * Position Detection • Remote Controls Features • 05mm Epoxy Resin Package » High Sensitivity: lL= 250|iA Typ. • Half Value Angle: QVi = ± 8° (Typ.)
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TPS610
TLN110
TLN205
98-4LED
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TPS805
Abstract: TLN115
Text: 9097250 TO SH IBA D I S C R E T E / OPTO 90D TOSHIBA -CDISCRETE/OPTQ} ^ 16503 D Î>Ë( TDT72SQ GDlb5Q3 4 W ~ Detector (Photo Diode) Characteristic (Ta = 25°C) Classification Type No. Status Outline Package 'S C IM ) jí ä TPS708 QU> •6- »crUTI; Metal
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TDT72SQ
TPS708
TLN110
TLN115
TLN205
TPS703
TLN111
TPS703A
TPS704
TPS70S
TPS805
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TLN10
Abstract: TLN103 IR LED 940 nm tln211 TLN108
Text: Infrared LED F7 Electro-optical Characteristics Ta»25°C Classification Type No. Package TLN101A 04.7 TLN108 Metal Package TLN201 TO-18 PoTYP (mW) 1.8 50 15(TYP.) 50 940 ±4 TPS601A 3 50 10 50 940 ±8 TPS604 Short Package 05 Package 03 Package If (mA) (<teg.)
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TLN101A
TLN108
TLN201
TLN102
TLN105B
TLN110
TLN115A
TLN205
TLN208
TLRA270
TLN10
TLN103
IR LED 940 nm
tln211
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPS611 TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR T• P■ <MF; f i i■ 1■ FOR PHOTO SENSOR U nit in mm PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION • [>5mm epoxy resin package (black • High sensitivity :I l = 120/;A (TYP.)
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TPS611
TLN110
TLN205
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TLP806
Abstract: TLP802 tlp850 TLP805 TLP852 TLRA280 photo transistor application TPS833 TLP816 TLP907
Text: 5 . Classification Guide for Photo Sensor Packages •E m itter and D etecto r Type w ith To-18 Lens i3 m m Resin #>m m Resin To-18 Flat iffim Appearance .ifn H E ifpjffef • ' /J P * ' / 'jifo, TLN110 TLN 115A TLN 205 TLN 221 TLN 222 TLN 223 TLN 224 TLN 227
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To-18
TLN110
TLN101A
TLN108
TLN201
TLN102
TLN103A
TLN208
TLN119
TLP806
TLP802
tlp850
TLP805
TLP852
TLRA280
photo transistor application
TPS833
TLP816
TLP907
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TLN103
Abstract: TLN108 TPS605LB
Text: Photo Transistor - F7 Transistor Type Classification Type N a Package S TPS601A TPS604 Metal To-18 TPS614 05 D O O O Electro-optical Characteristics Ta=25“C MIN (MA) 100 SK o TPS610 7 (dge) V ce MAX (V) Vistole Light
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TPS601A
TPS604
To-18
TPS614
TLN101A
TLN102
TLN108
TLN201
TPS610
TPS611
TLN103
TLN108
TPS605LB
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Untitled
Abstract: No abstract text available
Text: 6 .Characteristics List nfrared LEDs, Visible LEDs M axim um R a tin g s T a -=25°C Type No. TLN101A Features TO -18 (w ith lens can ) TLN102 T0-18(with flat can) TLN103A ¿3 TLN 104 Double-end TLN 104(LB ) TLN105B D o u b le e n d (D IP ) ¿5 TLN107A Side View
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TLN101A
TLN102
TLN103A
T0-18
TLN107A
TLN108
TLN110
TLN113
TLN115A
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Untitled
Abstract: No abstract text available
Text: TPS610 TOSHIBA TPS610 TOSHIBA PHOTO TRANSISTOR FOR PHOTO SENSOR SILICON NPN EPITAXIAL PLANAR U n i t in m m PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION • • • • 955mm epoxy resin package High sensitivity : II = 250/^A TYP. Half value angle : 6 i = ± 8° (TYP.)
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TPS610
955mm
TLN110
TLN205
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPS610 TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS61 0 FOR PHOTO SENSOR U nit in mm PHOTOELECTRIC COUNTER VARIOUS KINDS OF READERS POSITION DETECTION • 955mm epoxy resin package • High sensitivity • Half value angle : 0±= ± 8° TYP.
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TPS610
TPS61
955mm
TLN110
TLN205
TLN110
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