TPS805
Abstract: TLN115
Text: 9097250 TO SH IBA D I S C R E T E / OPTO 90D TOSHIBA -CDISCRETE/OPTQ} ^ 16503 D Î>Ë( TDT72SQ GDlb5Q3 4 W ~ Detector (Photo Diode) Characteristic (Ta = 25°C) Classification Type No. Status Outline Package 'S C IM ) jí ä TPS708 QU> •6- »crUTI; Metal
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TDT72SQ
TPS708
TLN110
TLN115
TLN205
TPS703
TLN111
TPS703A
TPS704
TPS70S
TPS805
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SF500EX26
Abstract: SF500U26 thyristor 15V 1000A SF500Y26 X103 tOSHIBA THYRISTOR SF500U
Text: 'TOSHIBA -CDISCRETE/OPTOJ 3e] DE | TDT72SQ 0D02BÖ7 1 l ~ b “7 c <3,5'‘-<30 PHASE CONTROL THYRISTOR SF500EX26 2500V 500A Unit in mm MAXIMUM RATINGS C H A R A C T E R IS T IC Repetitive Peak SF500U26 O ff-State Voltage SF500Y26 and Repetitive Peak R ev erse Voltage
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CH75SQ
0002EÃ
SF500EX26
SF500U26
SF500Y26
67Rated,
SF500EX26
thyristor 15V 1000A
SF500Y26
X103
tOSHIBA THYRISTOR
SF500U
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PldB = 33.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G idB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package
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TIM8596-2
MW51120196
002271b
TIM8596-2
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-30SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, Single Carrier Level • High power - PldB = 45 dBm at 6.4 GHz to 7.2 GHz • High efficiency - Tladd = 36% at 6.4 GHz to 7.2 GHz • High gain
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TIM6472-30SL
2-16G1B)
MW50960196
TDT72SQ
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