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    TL821 Search Results

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    TL821 Price and Stock

    Honeywell Sensing and Control 2TL82-10

    SWITCH TOGGLE SP3T 15A 125V
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    DigiKey 2TL82-10 Bulk 50
    • 1 -
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    • 100 $112.476
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    Mouser Electronics 2TL82-10
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    • 100 $216.85
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    RS 2TL82-10 Bulk 60 Weeks 50
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    • 100 $176.86
    • 1000 $176.86
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    Master Electronics 2TL82-10
    • 1 -
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    • 100 $114.82
    • 1000 $114.82
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    Olimex SMD IC RTL8211E-VB-CG

    SMD IC RTL8211E-VB-CG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMD IC RTL8211E-VB-CG Bulk 1
    • 1 $2.07
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    • 100 $2.07
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    Honeywell Sensing and Control 2TL8210

    Sealed Oi Switch |Honeywell 2TL8210
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 2TL8210 Bulk 50
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    • 100 $137.79
    • 1000 $137.79
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    UNKNOWN RTL8211BN-GR

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics RTL8211BN-GR 87
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    Realtek Semiconductor RTL8211EG-UB-CG

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics RTL8211EG-UB-CG 20
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    Find more TL821 price and stock on Findchips.com

    TL821 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TL82166

    Abstract: GMW3100 TL965 TL82366 4856F AEC-Q100 ATA6823 JESD78 QFN32 T100
    Text: Features • PWM and Direction-controlled Driving of Four Externally-powered NMOS Transistors • A Programmable Dead Time Is Included to Avoid Peak Currents Within the H-bridge • Integrated Charge Pump to Provide Gate Voltages for High-side Drivers and to Supply


    Original     		PDF 4856F TL82166 GMW3100 TL965 TL82366 AEC-Q100 ATA6823 JESD78 QFN32 T100

    TL817

    Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805
    Text: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original     		PDF PTFB241402F PTFB241402F H-37248-4 TL817 TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805

    TL82166

    Abstract: TL965 GMW3100 AEC-Q100 ATA6823 JESD78 QFN32 T100 TL821 TL82366
    Text: Features • PWM and Direction-controlled Driving of Four Externally-powered NMOS Transistors • A Programmable Dead Time Is Included to Avoid Peak Currents Within the H-bridge • Integrated Charge Pump to Provide Gate Voltages for High-side Drivers and to Supply


    Original     		PDF 4856E TL82166 TL965 GMW3100 AEC-Q100 ATA6823 JESD78 QFN32 T100 TL821 TL82366

    C909

    Abstract: tL920 TL823 TL817 PTFB241402F
    Text: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular ampliier applications in


    Original     		PDF PTFB241402F PTFB241402F H-37248-4 C909 tL920 TL823 TL817

    TL817

    Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
    Text: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original     		PDF PTFB241402F PTFB241402F H-37248-4 TL817 TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945