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TE Connectivity TCTL2-4-0-1-2-IV-U COMPRESSION CONNECTORS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TCTL2-4-0-1-2-IV-U	Box	19		1	1 $5.27 10 $4.68 100 $4.68 1000 $4.68 10000 $4.68	Buy Now
Lite-On Semiconductor Corporation LTL-2400Y LED LGT BAR 8.89X3.81MM YLW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LTL-2400Y	Tube			1,000	1 - 10 - 100 - 1000 $0.41331 10000 $0.41331	Buy Now
Avnet Americas	LTL-2400Y	Tube		12 Weeks	1,000	1 - 10 - 100 - 1000 $0.44722 10000 $0.39461	Buy Now
Mouser Electronics	LTL-2400Y					1 $1.01 10 $0.672 100 $0.52 1000 $0.408 10000 $0.402	Get Quote
SEI Stackpole Electronics Inc RNV14JTL240K RES 240K OHM 5% 1/4W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RNV14JTL240K	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.0303	Buy Now
Avnet Americas	RNV14JTL240K	Reel		8 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.0276	Buy Now
Mouser Electronics	RNV14JTL240K					1 $0.26 10 $0.22 100 $0.086 1000 $0.036 10000 $0.028	Get Quote
NAC	RNV14JTL240K				5,000	1 - 10 - 100 - 1000 - 10000 $0.067	Buy Now
SEI Stackpole Electronics Inc RNV14FTL240K RES 240K OHM 1% 1/4W AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RNV14FTL240K	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.02727	Buy Now
Mouser Electronics	RNV14FTL240K					1 $0.24 10 $0.198 100 $0.078 1000 $0.033 10000 $0.025	Get Quote
NAC	RNV14FTL240K				5,000	1 - 10 - 100 - 1000 - 10000 $0.08	Buy Now
Anytek Technology Corporation Ltd TL2405800000G TERM BLK 24POS TOP ENTRY 5MM PCB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TL2405800000G	Bulk			2,010	1 - 10 - 100 - 1000 - 10000 $2.61681	Buy Now
Onlinecomponents.com	TL2405800000G					1 - 10 - 100 - 1000 $6.77 10000 $2.47	Buy Now
Interstate Connecting Components	TL2405800000G					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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TL240 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TL2405800000G		Amphenol Anytek	Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 24POS TOP ENTRY 5MM PCB		Original	PDF

TL240 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TL205 Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147 Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's	Original	PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147	PDF
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242	PDF
Untitled Abstract: No abstract text available Text: 2 4 2 1 n1.00 `.10 [.039 `.004 in] 6.50 `.10 [.256 `.004 in] RELEASED FOR PRODUCTION 15030 14919 PCR NO B A REV 1.81 [.071 in] 4.80 [.189 in] 2.30 [.091 in] 1 4.50 [.177 in] 3 JB 5/13/05 BY DM 7/22/05 DATE BGL 12/28/10 6.50 `.50 [.256 `.020 in] THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROPRIETARY	Original	12VDC 100mILLI-Ohms 2002/95/ECONS 2002/95/EC TL240NF160 P010330) TL240 P001004)	PDF
TL235 Abstract: No abstract text available Text: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency	Original	PTVA030121EA PTVA030121EA H-36265-2 TL235	PDF
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1	PDF
C109 ceramic capacitor Abstract: TL235 Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235	PDF
TRANSISTOR tl131 Abstract: tl239 Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include	Original	PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239	PDF
C205 Abstract: No abstract text available Text: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications	Original	PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205	PDF
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF
TL272 Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148	PDF
PTFB090901 Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801 Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801	PDF
TL145 Abstract: TL245 transistor c111 C216 TL152 Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152	PDF
TRANSISTOR tl131 Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117 Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117	PDF
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF

TRANSISTOR tl131 Abstract: No abstract text available Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include	Original	PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131	PDF
Untitled Abstract: No abstract text available Text: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications in the 1805 to 1880 MHz frequency band. Features include input	Original	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6 H-34288-4/2	PDF
Untitled Abstract: No abstract text available Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's	Original	PTFC260202FC PTFC260202FC 10-watt H-37248-4	PDF
ATC100B6R2CT500X Abstract: TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126 Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB213208FV PTFB213208SV 320-watt PTFB213208FV H-34275G-6/2 ATC100B6R2CT500X TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126	PDF
transistor c124 Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300 Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 transistor c124 TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300	PDF
TL235 Abstract: tl241 TL234 TL240 PTVA030121EA bd 302 transistor TL205 TL2082 ATC100B9R1BW500XB R807 Text: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency	Original	PTVA030121EA PTVA030121EA H-36265-2 TL235 tl241 TL234 TL240 bd 302 transistor TL205 TL2082 ATC100B9R1BW500XB R807	PDF
Untitled Abstract: No abstract text available Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's	Original	PTFC260202FC PTFC260202FC 10-watt H-37248-4	PDF
Untitled Abstract: No abstract text available Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's	Original	PTFC260202FC PTFC260202FC 10-watt H-37248-4	PDF
TL139 Abstract: TL205 PTFB183404 ptfb183404f transistor TL131 Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131	PDF
PTFB093608 Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145 Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PTFB093608FV PTFB093608FV H-37275-6/2 PTFB093608 tl2272 ptfb09360 TL258 TL103 application note tl131 TRANSISTOR c104 TL249 TL145	PDF

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TL240 Search Results

TL240 Price and Stock

TE Connectivity TCTL2-4-0-1-2-IV-U

Lite-On Semiconductor Corporation LTL-2400Y

SEI Stackpole Electronics Inc RNV14JTL240K

SEI Stackpole Electronics Inc RNV14FTL240K

Anytek Technology Corporation Ltd TL2405800000G

TL240 Datasheets (1)

TL240 Datasheets Context Search

TL205

tl249

Untitled

TL235

LM7805ACH-ND

C109 ceramic capacitor

TRANSISTOR tl131

C205

PTFB090901EA

TL272

PTFB090901

TL145

TRANSISTOR tl131

PTFB090901EA

TRANSISTOR tl131

Untitled

Untitled

ATC100B6R2CT500X

transistor c124

TL235

Untitled

Untitled

TL139

PTFB093608